Liang-Choo Hsia

Person

Hsinchu Hsien, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Trench capacitor having improved capacitance and fabrication method...
- Patent number 11,776,992
- Issue date Oct 3, 2023
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked capacitor with horizontal and vertical fin structures and m...
- Patent number 11,322,500
- Issue date May 3, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor having improved capacitance and fabrication method...
- Patent number 11,139,368
- Issue date Oct 5, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device with shallow buried capacitor and fabri...
- Patent number 11,114,442
- Issue date Sep 7, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating body ESD protection circuit
- Patent number 6,452,235
- Issue date Sep 17, 2002
- United Microelectronics Corp.
- Liang-Choo Hsia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an improved spacer
- Patent number 6,274,517
- Issue date Aug 14, 2001
- United Microelectronics Corp.
- Liang-Choo Hsia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating embedded dynamic random access memory
- Patent number 6,048,762
- Issue date Apr 11, 2000
- United Integrated Circuits Corp.
- Liang-Choo Hsia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit structure which avoids latchup effect
- Patent number 5,990,523
- Issue date Nov 23, 1999
- United Integrated Circuits Corp.
- Liang-Choo Hsia
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STACKED CAPACITOR WITH HORIZONTAL AND VERTICAL FIN STRUCTURES AND M...
- Publication number 20220037332
- Publication date Feb 3, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CAPACITOR HAVING IMPROVED CAPACITANCE AND FABRICATION METHOD...
- Publication number 20220020844
- Publication date Jan 20, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE WITH SHALLOW BURIED CAPACITOR AND FABRI...
- Publication number 20210183867
- Publication date Jun 17, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CAPACITOR HAVING IMPROVED CAPACITANCE AND FABRICATION METHOD...
- Publication number 20210098566
- Publication date Apr 1, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS

Liang-Choo Hsia

Person

Patents Grantslast 30 patents

Trench capacitor having improved capacitance and fabrication method...

Stacked capacitor with horizontal and vertical fin structures and m...

Trench capacitor having improved capacitance and fabrication method...

Semiconductor memory device with shallow buried capacitor and fabri...

Floating body ESD protection circuit

Method of fabricating an improved spacer

Method of fabricating embedded dynamic random access memory

Circuit structure which avoids latchup effect

Patents Applicationslast 30 patents

STACKED CAPACITOR WITH HORIZONTAL AND VERTICAL FIN STRUCTURES AND M...

TRENCH CAPACITOR HAVING IMPROVED CAPACITANCE AND FABRICATION METHOD...

SEMICONDUCTOR MEMORY DEVICE WITH SHALLOW BURIED CAPACITOR AND FABRI...

TRENCH CAPACITOR HAVING IMPROVED CAPACITANCE AND FABRICATION METHOD...