Liang-Gi Yao

Person

Shin-Chu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method of semiconductor integrated circuit fabrication
- Patent number 10,861,751
- Issue date Dec 8, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of semiconductor integrated circuit fabrication
- Patent number 10,483,170
- Issue date Nov 19, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of semiconductor integrated circuit fabrication
- Patent number 10,008,418
- Issue date Jun 26, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure
- Patent number 9,922,827
- Issue date Mar 20, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming gate dielectric material
- Patent number 9,893,160
- Issue date Feb 13, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high-K gate dielectric layer
- Patent number 9,385,208
- Issue date Jul 5, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for integrated devices on different substartes...
- Patent number 9,362,123
- Issue date Jun 7, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of scavenging impurities in forming a gate stack having an i...
- Patent number 9,257,349
- Issue date Feb 9, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Ting Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having interfacial layer and high-k dielect...
- Patent number 9,245,970
- Issue date Jan 26, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress analysis of 3-D structures using tip-enhanced Raman scatteri...
- Patent number 9,194,804
- Issue date Nov 24, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- G01 - MEASURING TESTING
Information Patent Grant
Method of forming semiconductor structure
- Patent number 9,040,393
- Issue date May 26, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing interfacial layer thickness for high-k and meta...
- Patent number 9,006,056
- Issue date Apr 14, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a carbon-free dielectric layer over a carbon-...
- Patent number 8,987,095
- Issue date Mar 24, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Yu Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to make high-K transistor dielectrics
- Patent number 8,785,272
- Issue date Jul 22, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer scavenging metal gate stack for ultra-thin interfacial...
- Patent number 8,766,379
- Issue date Jul 1, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Ting Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-shallow junction MOSFET having a high-k gate dielectric and i...
- Patent number 8,759,185
- Issue date Jun 24, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming gate dielectric material
- Patent number 8,603,924
- Issue date Dec 10, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxed silicon germanium substrate with low defect density
- Patent number 8,564,018
- Issue date Oct 22, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun Chich Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing interfacial layer thickness for high-k and meta...
- Patent number 8,470,659
- Issue date Jun 25, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating backside illuminated image sensor
- Patent number 8,357,561
- Issue date Jan 22, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chi Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k gate dielectric and method of manufacture
- Patent number 8,294,201
- Issue date Oct 23, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate dielectric scheme: SiON for high performance devices and...
- Patent number RE43673
- Issue date Sep 18, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tou-Hung Hou
- 438 - Semiconductor device manufacturing: process
Information Patent Grant
Method for reducing interfacial layer thickness for high-K and meta...
- Patent number 8,268,683
- Issue date Sep 18, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminated silicon gate electrode
- Patent number 8,115,263
- Issue date Feb 14, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus of fluorine passivation
- Patent number 8,106,469
- Issue date Jan 31, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeff J. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-shallow junction MOSFET having a high-k gate dielectric and i...
- Patent number 8,097,924
- Issue date Jan 17, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to make high-K transistor dielectrics
- Patent number 8,012,824
- Issue date Sep 6, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Atomic layer deposition
- Patent number 8,003,548
- Issue date Aug 23, 2011
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-k gate dielectric and method of manufacture
- Patent number 7,998,820
- Issue date Aug 16, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating backside illuminated image sensor
- Patent number 7,923,344
- Issue date Apr 12, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chi Fu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION
- Publication number 20200083112
- Publication date Mar 12, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION
- Publication number 20180308765
- Publication date Oct 25, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- De-Wei YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION
- Publication number 20180096898
- Publication date Apr 5, 2018
- Taiwan Semiconductor Manufacturing Co., LTD
- De-Wei YU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE
- Publication number 20150249011
- Publication date Sep 3, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi YAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC LAYER
- Publication number 20150200266
- Publication date Jul 16, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Yu LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING INTERFACIAL LAYER AND HIGH-K DIELECT...
- Publication number 20150187902
- Publication date Jul 2, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi YAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stress Analysis of 3-D Structures Using Tip-Enhanced Raman Scatteri...
- Publication number 20150062561
- Publication date Mar 5, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- G01 - MEASURING TESTING
Information Patent Application
HIGH-K METAL GATE DEVICES WITH A DUAL WORK FUNCTION AND METHODS FOR...
- Publication number 20150011059
- Publication date Jan 8, 2015
- Taiwan Semiconductor Manufacturing Co., LTD
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Scavenging Impurities in Forming a Gate Stack Having an I...
- Publication number 20140315360
- Publication date Oct 23, 2014
- Kuan-Ting Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure And Method For Integrated Devices On Different Substartes...
- Publication number 20140175513
- Publication date Jun 26, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING GATE DIELECTRIC MATERIAL
- Publication number 20140080316
- Publication date Mar 20, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi YAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING INTERFACIAL LAYER THICKNESS FOR HIGH-K AND META...
- Publication number 20130256812
- Publication date Oct 3, 2013
- Liang-Gi YAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER SCAVENGING METAL GATE STACK FOR ULTRA-THIN INTERFACIAL...
- Publication number 20130075833
- Publication date Mar 28, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuan-Ting Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC LAYER AND MANUF...
- Publication number 20130043545
- Publication date Feb 21, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kun-Yu LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING INTERFACIAL LAYER THICKNESS FOR HIGH-K AND META...
- Publication number 20120322253
- Publication date Dec 20, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi YAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING GATE DIELECTRIC MATERIAL
- Publication number 20120094504
- Publication date Apr 19, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi YAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-Shallow Junction MOSFET Having a High-k Gate Dielectric and I...
- Publication number 20120083076
- Publication date Apr 5, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih-Hao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR STRUCTURE
- Publication number 20120015503
- Publication date Jan 19, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi YAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS TO MAKE HIGH-K TRANSISTOR DIELECTRICS
- Publication number 20110318915
- Publication date Dec 29, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi Yao
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HIGH-K GATE DIELECTRIC AND METHOD OF MANUFACTURE
- Publication number 20110291205
- Publication date Dec 1, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS OF FLUORINE PASSIVATION
- Publication number 20110169104
- Publication date Jul 14, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jeff J. Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING BACKSIDE ILLUMINATED IMAGE SENSOR
- Publication number 20110159631
- Publication date Jun 30, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chu Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING INTERFACIAL LAYER THICKNESS FOR HIGH-K AND META...
- Publication number 20100317184
- Publication date Dec 16, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Gi YAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION
- Publication number 20100279515
- Publication date Nov 4, 2010
- Taiwan Semiconductor Manufacturing Co., LTD
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR TREATING LAYERS OF A GATE STACK
- Publication number 20100184281
- Publication date Jul 22, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Rung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING BACKSIDE ILLUMINATED IMAGE SENSOR
- Publication number 20100087029
- Publication date Apr 8, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Chi Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Dielectric Layer having Plural High-K Films
- Publication number 20090047796
- Publication date Feb 19, 2009
- Taiwan Semiconductor Manufacturing Co., LTD
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-K Gate Dielectric and Method of Manufacture
- Publication number 20090042381
- Publication date Feb 12, 2009
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic layer deposition
- Publication number 20080305646
- Publication date Dec 11, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming MOS devices with metal-inserted polysilicon gat...
- Publication number 20080299754
- Publication date Dec 4, 2008
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS

Liang-Gi Yao

Person

Patents Grantslast 30 patents

Method of semiconductor integrated circuit fabrication

Method of semiconductor integrated circuit fabrication

Method of semiconductor integrated circuit fabrication

Method of forming a semiconductor structure

Methods of forming gate dielectric material

Semiconductor device having high-K gate dielectric layer

Structure and method for integrated devices on different substartes...

Method of scavenging impurities in forming a gate stack having an i...

Semiconductor structure having interfacial layer and high-k dielect...

Stress analysis of 3-D structures using tip-enhanced Raman scatteri...

Method of forming semiconductor structure

Method for reducing interfacial layer thickness for high-k and meta...

Method of fabricating a carbon-free dielectric layer over a carbon-...

Process to make high-K transistor dielectrics

Multi-layer scavenging metal gate stack for ultra-thin interfacial...

Ultra-shallow junction MOSFET having a high-k gate dielectric and i...

Methods of forming gate dielectric material

Relaxed silicon germanium substrate with low defect density

Method for reducing interfacial layer thickness for high-k and meta...

Method of fabricating backside illuminated image sensor

High-k gate dielectric and method of manufacture

Dual gate dielectric scheme: SiON for high performance devices and...

Method for reducing interfacial layer thickness for high-K and meta...

Laminated silicon gate electrode

Methods and apparatus of fluorine passivation

Ultra-shallow junction MOSFET having a high-k gate dielectric and i...

Process to make high-K transistor dielectrics

Atomic layer deposition

High-k gate dielectric and method of manufacture

Method of fabricating backside illuminated image sensor

Patents Applicationslast 30 patents

METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION

METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION

METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT FABRICATION

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC LAYER

SEMICONDUCTOR STRUCTURE HAVING INTERFACIAL LAYER AND HIGH-K DIELECT...

Stress Analysis of 3-D Structures Using Tip-Enhanced Raman Scatteri...

HIGH-K METAL GATE DEVICES WITH A DUAL WORK FUNCTION AND METHODS FOR...

Method of Scavenging Impurities in Forming a Gate Stack Having an I...

Structure And Method For Integrated Devices On Different Substartes...

METHODS OF FORMING GATE DIELECTRIC MATERIAL

METHOD FOR REDUCING INTERFACIAL LAYER THICKNESS FOR HIGH-K AND META...

MULTI-LAYER SCAVENGING METAL GATE STACK FOR ULTRA-THIN INTERFACIAL...

SEMICONDUCTOR DEVICE HAVING HIGH-K GATE DIELECTRIC LAYER AND MANUF...

METHOD FOR REDUCING INTERFACIAL LAYER THICKNESS FOR HIGH-K AND META...

METHODS OF FORMING GATE DIELECTRIC MATERIAL

Ultra-Shallow Junction MOSFET Having a High-k Gate Dielectric and I...

METHOD OF FORMING SEMICONDUCTOR STRUCTURE

PROCESS TO MAKE HIGH-K TRANSISTOR DIELECTRICS

HIGH-K GATE DIELECTRIC AND METHOD OF MANUFACTURE

METHODS AND APPARATUS OF FLUORINE PASSIVATION

METHOD OF FABRICATING BACKSIDE ILLUMINATED IMAGE SENSOR

METHOD FOR REDUCING INTERFACIAL LAYER THICKNESS FOR HIGH-K AND META...

ATOMIC LAYER DEPOSITION

METHOD FOR TREATING LAYERS OF A GATE STACK

METHOD OF FABRICATING BACKSIDE ILLUMINATED IMAGE SENSOR

Method of Manufacturing a Dielectric Layer having Plural High-K Films

High-K Gate Dielectric and Method of Manufacture

Atomic layer deposition

Methods for forming MOS devices with metal-inserted polysilicon gat...