LIANG LI

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Guilderland, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Method to form a fin structure on deep trenches for a semiconductor...
- Patent number 12,125,873
- Issue date Oct 22, 2024
- HeFeChip Corporation Limited
- Liang Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD TO FORM SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE THEREOF
- Publication number 20230317526
- Publication date Oct 5, 2023
- LIANG LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FORM A FIN STRUCTURE ON DEEP TRENCHES FOR A SEMICONDUCTOR...
- Publication number 20230317771
- Publication date Oct 5, 2023
- HeFeChip Corporation Limited
- LIANG LI
- H01 - BASIC ELECTRIC ELEMENTS