Liang Pang

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Non-volatile memory with reduced program speed variation
- Patent number 10,497,711
- Issue date Dec 3, 2019
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
First read solution for memory
- Patent number 10,394,649
- Issue date Aug 27, 2019
- SanDisk Technologies LLC
- Idan Alrod
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
First read solution for memory
- Patent number 10,372,536
- Issue date Aug 6, 2019
- SanDisk Technologies LLC
- Idan Alrod
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Command sequence for first read solution for memory
- Patent number 10,262,743
- Issue date Apr 16, 2019
- SanDisk Technologies LLC
- Idan Alrod
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic tuning of first read countermeasures
- Patent number 10,157,676
- Issue date Dec 18, 2018
- SanDisk Technologies LLC
- Liang Pang
- G11 - INFORMATION STORAGE
Information Patent Grant
Select transistors with tight threshold voltage in 3D memory
- Patent number 10,128,257
- Issue date Nov 13, 2018
- SanDisk Technologies LLC
- Liang Pang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing charge loss in data memory cell adjacent to dummy memory cell
- Patent number 10,121,552
- Issue date Nov 6, 2018
- SanDisk Technologies LLC
- Ashish Baraskar
- G11 - INFORMATION STORAGE
Information Patent Grant
Detecting misalignment in memory array and adjusting read and verif...
- Patent number 10,068,657
- Issue date Sep 4, 2018
- SanDisk Technologies LLC
- Xuehong Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Forming memory cell film in stack opening
- Patent number 10,020,314
- Issue date Jul 10, 2018
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Block health monitoring using threshold voltage of dummy memory cells
- Patent number 10,008,277
- Issue date Jun 26, 2018
- SanDisk Technologies LLC
- Liang Pang
- G11 - INFORMATION STORAGE
Information Patent Grant
Suppressing disturb of select gate transistors during erase in memory
- Patent number 9,984,760
- Issue date May 29, 2018
- SanDisk Technologies LLC
- Zhengyi Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
First read solution for memory
- Patent number 9,952,944
- Issue date Apr 24, 2018
- SanDisk Technologies LLC
- Idan Alrod
- G11 - INFORMATION STORAGE
Information Patent Grant
Select transistors with tight threshold voltage in 3D memory
- Patent number 9,941,293
- Issue date Apr 10, 2018
- SanDisk Technologies LLC
- Liang Pang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy voltage to reduce first read effect in memory
- Patent number 9,911,500
- Issue date Mar 6, 2018
- SanDisk Technologies LLC
- Liang Pang
- G11 - INFORMATION STORAGE
Information Patent Grant
Amorphous silicon layer in memory device which reduces neighboring...
- Patent number 9,859,298
- Issue date Jan 2, 2018
- SanDisk Technologies LLC
- Liang Pang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy word line control scheme for non-volatile memory
- Patent number 9,852,803
- Issue date Dec 26, 2017
- SanDisk Technologies LLC
- Vinh Quang Diep
- G11 - INFORMATION STORAGE
Information Patent Grant
Reducing neighboring word line in interference using low-k oxide
- Patent number 9,831,118
- Issue date Nov 28, 2017
- SanDisk Technologies LLC
- Liang Pang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line-dependent and temperature-dependent erase depth
- Patent number 9,830,963
- Issue date Nov 28, 2017
- SanDisk Technologies LLC
- Liang Pang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory hole size variation in a 3D stacked memory
- Patent number 9,812,462
- Issue date Nov 7, 2017
- SanDisk Technologies LLC
- Liang Pang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High conductivity channel for 3D memory
- Patent number 9,793,283
- Issue date Oct 17, 2017
- SanDisk Technologies LLC
- Liang Pang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Equalizing erase depth in different blocks of memory cells
- Patent number 9,786,378
- Issue date Oct 10, 2017
- SanDisk Technologies LLC
- Zhengyi Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with select transistor having charg...
- Patent number 9,748,266
- Issue date Aug 29, 2017
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic tuning of first read countermeasures
- Patent number 9,715,937
- Issue date Jul 25, 2017
- SanDisk Technologies LLC
- Liang Pang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming memory cell film
- Patent number 9,673,216
- Issue date Jun 6, 2017
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alternating refractive index in charge-trapping film in three-dimen...
- Patent number 9,666,593
- Issue date May 30, 2017
- SanDisk Technologies LLC
- Liang Pang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line ramping down scheme to purge residual electrons
- Patent number 9,620,233
- Issue date Apr 11, 2017
- SanDisk Technologies LLC
- Yingda Dong
- G11 - INFORMATION STORAGE
Information Patent Grant
Weak erase prior to read
- Patent number 9,607,707
- Issue date Mar 28, 2017
- SanDisk Technologies LLC
- Liang Pang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method and apparatus for refresh programming of memory cells based...
- Patent number 9,595,342
- Issue date Mar 14, 2017
- SanDisk Technologies LLC
- Liang Pang
- G11 - INFORMATION STORAGE
Information Patent Grant
Word line-dependent and temperature-dependent pass voltage during p...
- Patent number 9,583,198
- Issue date Feb 28, 2017
- SanDisk Technologies LLC
- Liang Pang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory structure having self-aligned drain region...
- Patent number 9,543,320
- Issue date Jan 10, 2017
- SanDisk Technologies LLC
- Liang Pang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Reducing Charge Loss In Data Memory Cell Adjacent To Dummy Memory Cell
- Publication number 20180308556
- Publication date Oct 25, 2018
- SanDisk Technologies LLC
- Ashish Baraskar
- G11 - INFORMATION STORAGE
Information Patent Application
Detecting Misalignment In Memory Array And Adjusting Read And Verif...
- Publication number 20180233206
- Publication date Aug 16, 2018
- SanDisk Tehnologies LLC
- Xuehong Yu
- G11 - INFORMATION STORAGE
Information Patent Application
FIRST READ SOLUTION FOR MEMORY
- Publication number 20180203762
- Publication date Jul 19, 2018
- SanDisk Technologies LLC
- Idan Alrod
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FIRST READ SOLUTION FOR MEMORY
- Publication number 20180203763
- Publication date Jul 19, 2018
- SanDisk Technologies LLC
- Idan Alrod
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SELECT TRANSISTORS WITH TIGHT THRESHOLD VOLTAGE IN 3D MEMORY
- Publication number 20180190667
- Publication date Jul 5, 2018
- SanDisk Technologies LLC
- Liang Pang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY WITH REDUCED PROGRAM SPEED VARIATION
- Publication number 20180122814
- Publication date May 3, 2018
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Command Sequence For First Read Solution For Memory
- Publication number 20180114580
- Publication date Apr 26, 2018
- SanDisk Technologies LLC
- Idan Alrod
- G11 - INFORMATION STORAGE
Information Patent Application
First Read Solution For Memory
- Publication number 20180113759
- Publication date Apr 26, 2018
- SanDisk Technologies LLC
- Idan Alrod
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SELECT TRANSISTORS WITH TIGHT THRESHOLD VOLTAGE IN 3D MEMORY
- Publication number 20180102375
- Publication date Apr 12, 2018
- SanDisk Technologies LLC
- Liang Pang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Block Health Monitoring Using Threshold Voltage Of Dummy Memory Cells
- Publication number 20180075919
- Publication date Mar 15, 2018
- SanDisk Technologies LLC
- Liang Pang
- G11 - INFORMATION STORAGE
Information Patent Application
Non-Volatile Memory With Reduced Program Speed Variation
- Publication number 20180033794
- Publication date Feb 1, 2018
- SanDisk Technologies LLC
- Ashish Baraskar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Amorphous Silicon Layer In Memory Device Which Reduces Neighboring...
- Publication number 20170373086
- Publication date Dec 28, 2017
- SanDisk Technologies LLC
- Liang Pang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dynamic Tuning Of First Read Countermeasures
- Publication number 20170365349
- Publication date Dec 21, 2017
- SanDisk Technologies LLC
- Liang Pang
- G11 - INFORMATION STORAGE
Information Patent Application
Reducing Neighboring Word Line In Interference Using Low-K Oxide
- Publication number 20170345705
- Publication date Nov 30, 2017
- SanDisk Technologies LLC
- Liang Pang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORD LINE-DEPENDENT AND TEMPERATURE-DEPENDENT ERASE DEPTH
- Publication number 20170345470
- Publication date Nov 30, 2017
- SanDisk Technologies LLC
- Liang Pang
- G11 - INFORMATION STORAGE
Information Patent Application
DUMMY WORD LINE CONTROL SCHEME FOR NON-VOLATILE MEMORY
- Publication number 20170330631
- Publication date Nov 16, 2017
- SANDISK TECHNOLOGIES INC.
- Vinh Quang Diep
- G11 - INFORMATION STORAGE
Information Patent Application
Dummy Voltage To Reduce First Read Effect In Memory
- Publication number 20170301403
- Publication date Oct 19, 2017
- SANDISK TECHNOLOGIES INC.
- Liang Pang
- G11 - INFORMATION STORAGE
Information Patent Application
Selective Removal Of Charge-Trapping Layer For Select Gate Transist...
- Publication number 20160307915
- Publication date Oct 20, 2016
- SANDISK TECHNOLOGIES INC.
- Liang Pang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method And Apparatus For Refresh Programming Of Memory Cells Based...
- Publication number 20160211032
- Publication date Jul 21, 2016
- SANDISK TECHNOLOGIES INC.
- Liang Pang
- G11 - INFORMATION STORAGE
Information Patent Application
Contact For Vertical Memory With Dopant Diffusion Stopper And Assoc...
- Publication number 20160172368
- Publication date Jun 16, 2016
- SANDISK TECHNOLOGIES INC.
- Liang Pang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY STRUCTURE HAVING SELF-ALIGNED DRAIN REGION...
- Publication number 20160111435
- Publication date Apr 21, 2016
- SANDISK TECHNOLOGIES INC.
- Liang Pang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY STRUCTURE HAVING SELF-ALIGNED DRAIN REGION...
- Publication number 20160111437
- Publication date Apr 21, 2016
- SanDisk Technologies, Inc.
- Liang PANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Alternating Refractive Index In Charge-Trapping Film In Three-Dimen...
- Publication number 20160093636
- Publication date Mar 31, 2016
- SANDISK TECHNOLOGIES INC.
- Liang Pang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFYING PROGRAM PULSES BASED ON INTER-PULSE PERIOD TO REDUCE PROG...
- Publication number 20160093380
- Publication date Mar 31, 2016
- SANDISK TECHNOLOGIES INC.
- Yingda Dong
- G11 - INFORMATION STORAGE
Information Patent Application
Read With Look-Back Combined With Programming With Asymmetric Boost...
- Publication number 20160093390
- Publication date Mar 31, 2016
- SANDISK TECHNOLOGIES INC.
- Jiahui Yuan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Programming Memory With Reduced Short-Term Charge Loss
- Publication number 20160064084
- Publication date Mar 3, 2016
- SANDISK TECHNOLOGIES INC.
- Ching-Huang Lu
- G11 - INFORMATION STORAGE
Information Patent Application
Avoiding Unintentional Program Or Erase Of A Select Gate Transistor
- Publication number 20160055915
- Publication date Feb 25, 2016
- SANDISK TECHNOLOGIES INC.
- Yingda Dong
- G11 - INFORMATION STORAGE
Information Patent Application
Multiple Pass Programming For Memory With Different Program Pulse W...
- Publication number 20160019947
- Publication date Jan 21, 2016
- SANDISK TECHNOLOGIES INC.
- Liang Pang
- G11 - INFORMATION STORAGE
Information Patent Application
Reprogramming Memory With Single Program Pulse Per Data State
- Publication number 20160019948
- Publication date Jan 21, 2016
- SANDISK TECHNOLOGIES INC.
- Liang Pang
- G11 - INFORMATION STORAGE
Information Patent Application
EFFICIENT REPROGRAMMING METHOD FOR TIGHTENING A THRESHOLD VOLTAGE D...
- Publication number 20150325297
- Publication date Nov 12, 2015
- SANDISK TECHNOLOGIES INC.
- Liang Pang
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Non-volatile memory with reduced program speed variation

First read solution for memory

First read solution for memory

Command sequence for first read solution for memory

Dynamic tuning of first read countermeasures

Select transistors with tight threshold voltage in 3D memory

Reducing charge loss in data memory cell adjacent to dummy memory cell

Detecting misalignment in memory array and adjusting read and verif...

Forming memory cell film in stack opening

Block health monitoring using threshold voltage of dummy memory cells

Suppressing disturb of select gate transistors during erase in memory

First read solution for memory

Select transistors with tight threshold voltage in 3D memory

Dummy voltage to reduce first read effect in memory

Amorphous silicon layer in memory device which reduces neighboring...

Dummy word line control scheme for non-volatile memory

Reducing neighboring word line in interference using low-k oxide

Word line-dependent and temperature-dependent erase depth

Memory hole size variation in a 3D stacked memory

High conductivity channel for 3D memory

Equalizing erase depth in different blocks of memory cells

Three-dimensional memory device with select transistor having charg...

Dynamic tuning of first read countermeasures

Method of forming memory cell film

Alternating refractive index in charge-trapping film in three-dimen...

Word line ramping down scheme to purge residual electrons

Weak erase prior to read

Method and apparatus for refresh programming of memory cells based...

Word line-dependent and temperature-dependent pass voltage during p...

Three-dimensional memory structure having self-aligned drain region...

Patents Applicationslast 30 patents

Reducing Charge Loss In Data Memory Cell Adjacent To Dummy Memory Cell

Detecting Misalignment In Memory Array And Adjusting Read And Verif...

FIRST READ SOLUTION FOR MEMORY

FIRST READ SOLUTION FOR MEMORY

SELECT TRANSISTORS WITH TIGHT THRESHOLD VOLTAGE IN 3D MEMORY

NON-VOLATILE MEMORY WITH REDUCED PROGRAM SPEED VARIATION

Command Sequence For First Read Solution For Memory

First Read Solution For Memory

SELECT TRANSISTORS WITH TIGHT THRESHOLD VOLTAGE IN 3D MEMORY

Block Health Monitoring Using Threshold Voltage Of Dummy Memory Cells

Non-Volatile Memory With Reduced Program Speed Variation

Amorphous Silicon Layer In Memory Device Which Reduces Neighboring...

Dynamic Tuning Of First Read Countermeasures

Reducing Neighboring Word Line In Interference Using Low-K Oxide

WORD LINE-DEPENDENT AND TEMPERATURE-DEPENDENT ERASE DEPTH

DUMMY WORD LINE CONTROL SCHEME FOR NON-VOLATILE MEMORY

Dummy Voltage To Reduce First Read Effect In Memory

Selective Removal Of Charge-Trapping Layer For Select Gate Transist...

Method And Apparatus For Refresh Programming Of Memory Cells Based...

Contact For Vertical Memory With Dopant Diffusion Stopper And Assoc...

THREE-DIMENSIONAL MEMORY STRUCTURE HAVING SELF-ALIGNED DRAIN REGION...

THREE-DIMENSIONAL MEMORY STRUCTURE HAVING SELF-ALIGNED DRAIN REGION...

Alternating Refractive Index In Charge-Trapping Film In Three-Dimen...

MODIFYING PROGRAM PULSES BASED ON INTER-PULSE PERIOD TO REDUCE PROG...

Read With Look-Back Combined With Programming With Asymmetric Boost...

Programming Memory With Reduced Short-Term Charge Loss

Avoiding Unintentional Program Or Erase Of A Select Gate Transistor

Multiple Pass Programming For Memory With Different Program Pulse W...

Reprogramming Memory With Single Program Pulse Per Data State

EFFICIENT REPROGRAMMING METHOD FOR TIGHTENING A THRESHOLD VOLTAGE D...