LIANG-YU SU

Person

YUNLIN COUNTY, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Cap structure coupled to source to reduce saturation current in HEM...
- Patent number 12,100,757
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an IC including a varactor with reduced surface...
- Patent number 11,978,810
- Issue date May 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection circuit and semiconductor circuit
- Patent number 11,973,076
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ming-Fang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,764,288
- Issue date Sep 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap structure coupled to source to reduce saturation current in HEM...
- Patent number 11,742,419
- Issue date Aug 29, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avalanche-protected transistors using a bottom breakdown current pa...
- Patent number 11,437,466
- Issue date Sep 6, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 11,380,779
- Issue date Jul 5, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Feng Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap structure coupled to source to reduce saturation current in HEM...
- Patent number 11,195,945
- Issue date Dec 7, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced surface field layer in varactor
- Patent number 11,018,266
- Issue date May 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection circuit and semiconductor circuit
- Patent number 10,978,445
- Issue date Apr 13, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ming-Fang Lai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH VOLTAGE MOSFET USING SHALLOW-SHALLOW TRENCH ISOLATION STRUCTURE
- Publication number 20250089311
- Publication date Mar 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hung-Chih Tsai
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395904
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ENHANCED AVALANCHE RUGGEDNESS
- Publication number 20240371926
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- LIANG-YU SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...
- Publication number 20240332411
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED SURFACE FIELD LAYER IN VARACTOR
- Publication number 20240250188
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND SEMICONDUCTOR CIRCUIT
- Publication number 20240234411
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MING-FANG LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20230378323
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...
- Publication number 20230361208
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE-PROTECTED TRANSISTORS USING A BOTTOM BREAKDOWN CURRENT PA...
- Publication number 20220367614
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Liang-Yu SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220336638
- Publication date Oct 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...
- Publication number 20220093781
- Publication date Mar 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20220069107
- Publication date Mar 3, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE-PROTECTED TRANSISTORS USING A BOTTOM BREAKDOWN CURRENT PA...
- Publication number 20220052153
- Publication date Feb 17, 2022
- Taiwan Semiconductor Manufacturing Company Limited
- Liang-Yu SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED SURFACE FIELD LAYER IN VARACTOR
- Publication number 20210273119
- Publication date Sep 2, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND SEMICONDUCTOR CIRCUIT
- Publication number 20210249404
- Publication date Aug 12, 2021
- Taiwan Semiconductor Manufacturing company Ltd.
- MING-FANG LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...
- Publication number 20210066483
- Publication date Mar 4, 2021
- Taiwan Semiconductor Manufacturing Co., LTD
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED SURFACE FIELD LAYER IN VARACTOR
- Publication number 20200127146
- Publication date Apr 23, 2020
- Taiwan Semiconductor Manufacturing Co., LTD
- Liang-Yu Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND SEMICONDUCTOR CIRCUIT
- Publication number 20190237456
- Publication date Aug 1, 2019
- Taiwan Semiconductor Manufacturing company Ltd.
- MING-FANG LAI
- H03 - BASIC ELECTRONIC CIRCUITRY

LIANG-YU SU

Person

Patents Grantslast 30 patents

Cap structure coupled to source to reduce saturation current in HEM...

Method for forming an IC including a varactor with reduced surface...

Electrostatic discharge protection circuit and semiconductor circuit

Semiconductor device and manufacturing method thereof

Cap structure coupled to source to reduce saturation current in HEM...

Avalanche-protected transistors using a bottom breakdown current pa...

Semiconductor device and manufacturing method thereof

Cap structure coupled to source to reduce saturation current in HEM...

Reduced surface field layer in varactor

Electrostatic discharge protection circuit and semiconductor circuit

Patents Applicationslast 30 patents

HIGH VOLTAGE MOSFET USING SHALLOW-SHALLOW TRENCH ISOLATION STRUCTURE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE WITH ENHANCED AVALANCHE RUGGEDNESS

CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...

REDUCED SURFACE FIELD LAYER IN VARACTOR

ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND SEMICONDUCTOR CIRCUIT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...

AVALANCHE-PROTECTED TRANSISTORS USING A BOTTOM BREAKDOWN CURRENT PA...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

AVALANCHE-PROTECTED TRANSISTORS USING A BOTTOM BREAKDOWN CURRENT PA...

REDUCED SURFACE FIELD LAYER IN VARACTOR

ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND SEMICONDUCTOR CIRCUIT

CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...

REDUCED SURFACE FIELD LAYER IN VARACTOR

ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND SEMICONDUCTOR CIRCUIT