Lianjuan Ren

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Wuhan, CN

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Patents Grantslast 30 patents

Information Patent Grant
Methods for forming hole structure in semiconductor device
- Patent number 11,876,016
- Issue date Jan 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Gang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming hole structure in semiconductor device
- Patent number 11,817,348
- Issue date Nov 14, 2023
- Yangtze Memory Technologies Co., Ltd.
- Gang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching process with in-situ formation of protective layer
- Patent number 11,631,592
- Issue date Apr 18, 2023
- Yangtze Memory Technologies Co., Ltd.
- Yu Qi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching process with in-situ formation of protective layer
- Patent number 11,062,913
- Issue date Jul 13, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yu Qi Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ETCHING PROCESS WITH IN-SITU FORMATION OF PROTECTIVE LAYER
- Publication number 20210287914
- Publication date Sep 16, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yu Qi WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING HOLE STRUCTURE IN SEMICONDUCTOR DEVICE
- Publication number 20210104429
- Publication date Apr 8, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Gang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL ETCHING PROCESS WITH IN-SITU FORMATION OF PROTECTIVE LAYER
- Publication number 20200258757
- Publication date Aug 13, 2020
- Yangtze Memory Technologies Co., Ltd.
- Yu Qi WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING HOLE STRUCTURE IN SEMICONDUCTOR DEVICE
- Publication number 20200243373
- Publication date Jul 30, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Gang Yang
- H01 - BASIC ELECTRIC ELEMENTS