Liann-Be Chang

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Ta Hsi Town, TW

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Patents Grantslast 30 patents

Information Patent Grant
Rare-earth element-doped III-V compound semiconductor schottky diod...
- Patent number 6,225,200
- Issue date May 1, 2001
- National Science Council
- Liann-Be Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductor structure and its producing method
- Patent number 6,200,885
- Issue date Mar 13, 2001
- National Science Council
- Hung-Tsung Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for manufacturing Group III-V composite Schott...
- Patent number 6,197,667
- Issue date Mar 6, 2001
- National Science Council
- Liann-Be Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for manufacturing group III-V composite Schott...
- Patent number 6,087,704
- Issue date Jul 11, 2000
- National Science Council
- Liann-Be Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rare-earth schottky diode structure
- Patent number 6,087,702
- Issue date Jul 11, 2000
- National Science Council
- Liann-Be Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rare-earth element-doped III-V compound semiconductor schottky diod...
- Patent number 5,847,437
- Issue date Dec 8, 1998
- National Science Council
- Liann-Be Chang
- H01 - BASIC ELECTRIC ELEMENTS