Liesbeth Witters

Person

Lubbeek, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Integration of a III-V construction on a group IV substrate
- Patent number 11,646,200
- Issue date May 9, 2023
- Imec VZW
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for co-integration of III-V devices with group IV devices
- Patent number 11,557,503
- Issue date Jan 17, 2023
- Imec VZW
- Amey Mahadev Walke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fin structure and method of fabricating the same
- Patent number 11,387,350
- Issue date Jul 12, 2022
- Imec VZW
- Geert Eneman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low parasitic Ccb heterojunction bipolar transistor
- Patent number 11,355,618
- Issue date Jun 7, 2022
- Imec VZW
- Abhitosh Vais
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of a III-V device on a Si substrate
- Patent number 11,195,767
- Issue date Dec 7, 2021
- Imec VZW
- Amey Mahadev Walke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device comprising at least one ge...
- Patent number 10,714,595
- Issue date Jul 14, 2020
- Imec VZW
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Internal spacers for nanowire semiconductor devices
- Patent number 10,361,268
- Issue date Jul 23, 2019
- Imec VZW
- Kurt Wostyn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods and mask structures for substantially defect-free epitaxial...
- Patent number 10,340,139
- Issue date Jul 2, 2019
- IMEC
- Benjamin Vincent
- C30 - CRYSTAL GROWTH
Information Patent Grant
Internal spacer formation for nanowire semiconductor devices
- Patent number 10,269,929
- Issue date Apr 23, 2019
- Imec VZW
- Kurt Wostyn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for forming a field effect transistor device having an elect...
- Patent number 10,090,393
- Issue date Oct 2, 2018
- Imec VZW
- Steven Demuynck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a CMOS device and associated device
- Patent number 9,972,622
- Issue date May 15, 2018
- Imec VZW
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices comprising multiple channels and method of ma...
- Patent number 9,842,777
- Issue date Dec 12, 2017
- Imec VZW
- Liesbeth Witters
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for forming a transistor structure comprising a fin-shaped c...
- Patent number 9,633,891
- Issue date Apr 25, 2017
- Imec VZW
- Nadine Collaert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for providing an NMOS device and a PMOS device on a silicon...
- Patent number 9,502,415
- Issue date Nov 22, 2016
- Imec VZW
- Roger Loo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods using mask structures for substantially defect-free epitaxi...
- Patent number 9,476,143
- Issue date Oct 25, 2016
- IMEC
- Benjamin Vincent
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for forming a germanium channel layer for an NMOS transistor...
- Patent number 9,478,544
- Issue date Oct 25, 2016
- Imec VZW
- Jerome Mitard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact formation in Ge-containing semiconductor devices
- Patent number 9,343,329
- Issue date May 17, 2016
- Imec VZW
- Alexey Milenin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a strained semiconductor structure
- Patent number 9,299,563
- Issue date Mar 29, 2016
- Imec VZW
- Seung Hun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary metal-oxide-semiconductor device comprising silicon a...
- Patent number 9,123,566
- Issue date Sep 1, 2015
- IMEC
- Jerome Mitard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing a field-effect semiconductor device
- Patent number 9,070,712
- Issue date Jun 30, 2015
- IMEC
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a transistor device comprising a germanium...
- Patent number 8,828,826
- Issue date Sep 9, 2014
- IMEC
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATION OF A III-V CONSTRUCTION ON A GROUP IV SUBSTRATE
- Publication number 20210358748
- Publication date Nov 18, 2021
- IMEC vzw
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW PARASITIC Ccb HETEROJUNCTION BIPOLAR TRANSISTOR
- Publication number 20210167187
- Publication date Jun 3, 2021
- IMEC vzw
- Abhitosh Vais
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Co-Integration of III-V Devices with Group IV Devices
- Publication number 20210118724
- Publication date Apr 22, 2021
- IMEC vzw
- Amey Mahadev Walke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20200212205
- Publication date Jul 2, 2020
- IMEC vzw
- Geert Eneman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of a III-V Device on a Si Substrate
- Publication number 20200091003
- Publication date Mar 19, 2020
- IMEC vzw
- Amey Mahadev Walke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium Nanowire Fabrication
- Publication number 20190013395
- Publication date Jan 10, 2019
- IMEC vzw
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Internal Spacers for Nanowire Semiconductor Devices
- Publication number 20180254321
- Publication date Sep 6, 2018
- IMEC vzw
- Kurt Wostyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Internal Spacer Formation for Nanowire Semiconductor Devices
- Publication number 20180166558
- Publication date Jun 14, 2018
- IMEC vzw
- Kurt Wostyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Field Effect Transistor Device Having an Elect...
- Publication number 20170141199
- Publication date May 18, 2017
- IMEC vzw
- Steven Demuynck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and Mask Structures for Substantially Defect-Free Epitaxial...
- Publication number 20170040168
- Publication date Feb 9, 2017
- IMEC
- Benjamin Vincent
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICES COMPRISING MULTIPLE CHANNELS AND METHOD OF MA...
- Publication number 20170025314
- Publication date Jan 26, 2017
- IMEC vzw
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing a CMOS Device and Associated Device
- Publication number 20160336317
- Publication date Nov 17, 2016
- IMEC vzw
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Transistor Structure Comprising a Fin-Shaped C...
- Publication number 20160126131
- Publication date May 5, 2016
- IMEC vzw
- Nadine Collaert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A GERMANIUM CHANNEL LAYER FOR AN NMOS TRANSISTOR...
- Publication number 20160027780
- Publication date Jan 28, 2016
- IMEC vzw
- Jerome Mitard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PROVIDING AN NMOS DEVICE AND A PMOS DEVICE ON A SILICON...
- Publication number 20160027779
- Publication date Jan 28, 2016
- IMEC vzw
- Roger Loo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact Formation in Ge-Containing Semiconductor Devices
- Publication number 20150228502
- Publication date Aug 13, 2015
- IMEC vzw
- Alexey Milenin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING TRANSISTORS AND ASSOCIATED SUBSTRATE
- Publication number 20150076620
- Publication date Mar 19, 2015
- IMEC vzw
- Niamh WALDRON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Strained Semiconductor Structure
- Publication number 20140377936
- Publication date Dec 25, 2014
- Samsung Electronics Co. Ltd
- Seung Hun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF
- Publication number 20140061735
- Publication date Mar 6, 2014
- IMEC
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MANUFACTURING A FIELD-EFFECT SEMICONDUCTOR DEVICE
- Publication number 20140045315
- Publication date Feb 13, 2014
- IMEC
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary Metal-Oxide-Semiconductor Device Comprising Silicon a...
- Publication number 20140008730
- Publication date Jan 9, 2014
- IMEC
- Jerome Mitard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and Mask Structures for Substantially Defect-Free Epitaxial...
- Publication number 20130233238
- Publication date Sep 12, 2013
- IMEC
- Benjamin Vincent
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING A FIELD-EFFECT SEMICONDUCTOR DEVICE FOLLOW...
- Publication number 20130181301
- Publication date Jul 18, 2013
- Katholieke Universiteit Leuven
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Manufacturing Dense Integrated Circuits
- Publication number 20110084313
- Publication date Apr 14, 2011
- IMEC
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for manufacturing dense integrated circuits
- Publication number 20070172770
- Publication date Jul 26, 2007
- Liesbeth Witters
- H01 - BASIC ELECTRIC ELEMENTS

Liesbeth Witters

Person

Patents Grantslast 30 patents

Integration of a III-V construction on a group IV substrate

Method for co-integration of III-V devices with group IV devices

Semiconductor fin structure and method of fabricating the same

Low parasitic Ccb heterojunction bipolar transistor

Integration of a III-V device on a Si substrate

Method of forming a semiconductor device comprising at least one ge...

Internal spacers for nanowire semiconductor devices

Methods and mask structures for substantially defect-free epitaxial...

Internal spacer formation for nanowire semiconductor devices

Method for forming a field effect transistor device having an elect...

Method for manufacturing a CMOS device and associated device

Semiconductor devices comprising multiple channels and method of ma...

Method for forming a transistor structure comprising a fin-shaped c...

Method for providing an NMOS device and a PMOS device on a silicon...

Methods using mask structures for substantially defect-free epitaxi...

Method for forming a germanium channel layer for an NMOS transistor...

Contact formation in Ge-containing semiconductor devices

Method for forming a strained semiconductor structure

Complementary metal-oxide-semiconductor device comprising silicon a...

Methods for manufacturing a field-effect semiconductor device

Method for manufacturing a transistor device comprising a germanium...

Patents Applicationslast 30 patents

INTEGRATION OF A III-V CONSTRUCTION ON A GROUP IV SUBSTRATE

LOW PARASITIC Ccb HETEROJUNCTION BIPOLAR TRANSISTOR

Method for Co-Integration of III-V Devices with Group IV Devices

SEMICONDUCTOR FIN STRUCTURE AND METHOD OF FABRICATING THE SAME

Integration of a III-V Device on a Si Substrate

Germanium Nanowire Fabrication

Internal Spacers for Nanowire Semiconductor Devices

Internal Spacer Formation for Nanowire Semiconductor Devices

Method for Forming a Field Effect Transistor Device Having an Elect...

Methods and Mask Structures for Substantially Defect-Free Epitaxial...

SEMICONDUCTOR DEVICES COMPRISING MULTIPLE CHANNELS AND METHOD OF MA...

Method for Manufacturing a CMOS Device and Associated Device

Method for Forming a Transistor Structure Comprising a Fin-Shaped C...

METHOD FOR FORMING A GERMANIUM CHANNEL LAYER FOR AN NMOS TRANSISTOR...

METHOD FOR PROVIDING AN NMOS DEVICE AND A PMOS DEVICE ON A SILICON...

Contact Formation in Ge-Containing Semiconductor Devices

METHOD FOR MANUFACTURING TRANSISTORS AND ASSOCIATED SUBSTRATE

Method for Forming a Strained Semiconductor Structure

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF

METHODS FOR MANUFACTURING A FIELD-EFFECT SEMICONDUCTOR DEVICE

Complementary Metal-Oxide-Semiconductor Device Comprising Silicon a...

Methods and Mask Structures for Substantially Defect-Free Epitaxial...

METHOD FOR MANUFACTURING A FIELD-EFFECT SEMICONDUCTOR DEVICE FOLLOW...

Methods for Manufacturing Dense Integrated Circuits

Methods for manufacturing dense integrated circuits