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Hsin-Chu, TW
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last 30 patents
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Patent Grant
Method and resulting device for field inversion free multiple layer...
Patent number
5,461,254
Issue date
Oct 24, 1995
Taiwan Semiconductor Manufacturing Company LTD.
Lih-Shyng Tsai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Nitrogen plasma treatment to prevent field device leakage in VLSI p...
Patent number
5,334,554
Issue date
Aug 2, 1994
Taiwan Semiconductor Manufacturing Co., Ltd.
Kwang-Ming Lin
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Modified and robust self-aligning contact process
Patent number
5,286,667
Issue date
Feb 15, 1994
Taiwan Semiconductor Manufacturing Company
Jiunn-Jyi Lin
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for field inversion free multiple layer metallurgy VLSI proc...
Patent number
5,252,515
Issue date
Oct 12, 1993
Taiwan Semiconductor Manufacturing Company
Lih-Shyng Tsai
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Rapid thermal treatment to eliminate metal void formation in VLSI m...
Patent number
5,248,384
Issue date
Sep 28, 1993
Taiwan Semiconductor Manufacturing Company
Kwang-Ming Lin
H01 - BASIC ELECTRIC ELEMENTS