Lin Cheng

Person

Durham, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical power transistor device
- Patent number RE49913
- Issue date Apr 9, 2024
- Wolfspeed, Inc.
- Vipindas Pala
Information Patent Grant
Seminconductor device with spreading layer
- Patent number 10,950,719
- Issue date Mar 16, 2021
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with improved insulated gate
- Patent number 10,910,481
- Issue date Feb 2, 2021
- Cree, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power transistor device
- Patent number RE48380
- Issue date Jan 5, 2021
- Cree, Inc.
- Vipindas Pala
Information Patent Grant
Monolithically integrated vertical power transistor and bypass diode
- Patent number 10,868,169
- Issue date Dec 15, 2020
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor devices with buried well protection regions
- Patent number 10,784,338
- Issue date Sep 22, 2020
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a power transistor device and bypass...
- Patent number 10,600,903
- Issue date Mar 24, 2020
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using a carbon vacancy reduction material to increase average carri...
- Patent number 10,541,306
- Issue date Jan 21, 2020
- Cree, Inc.
- Michael John O'Loughlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using a carbon vacancy reduction material to increase average carri...
- Patent number 10,403,722
- Issue date Sep 3, 2019
- Cree, Inc.
- Michael John O'Loughlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor devices with buried well protection regions
- Patent number 10,134,834
- Issue date Nov 20, 2018
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming buried junction devices in silicon carbide using...
- Patent number 10,103,230
- Issue date Oct 16, 2018
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming power semiconductor devices having superjunction...
- Patent number 9,972,677
- Issue date May 15, 2018
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor structure for reduced current crowding
- Patent number 9,755,018
- Issue date Sep 5, 2017
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power transistor device
- Patent number 9,741,842
- Issue date Aug 22, 2017
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with improved avalanche capability
- Patent number 9,601,605
- Issue date Mar 21, 2017
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced gate dielectric for a field effect device with a trenched...
- Patent number 9,570,570
- Issue date Feb 14, 2017
- Cree, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor devices with buried well protection regions
- Patent number 9,570,585
- Issue date Feb 14, 2017
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices having superjunction structures with im...
- Patent number 9,515,199
- Issue date Dec 6, 2016
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming buried junction devices in silicon carbide using...
- Patent number 9,484,413
- Issue date Nov 1, 2016
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having high performance channel
- Patent number 9,478,616
- Issue date Oct 25, 2016
- Cree, Inc.
- Sarit Dhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination technique for high voltage power devices having a...
- Patent number 9,425,265
- Issue date Aug 23, 2016
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wet chemistry processes for fabricating a semiconductor device with...
- Patent number 9,396,946
- Issue date Jul 19, 2016
- Cree, Inc.
- Sarit Dhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC devices with high blocking voltage terminated by a negative bevel
- Patent number 9,349,797
- Issue date May 24, 2016
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power transistor device
- Patent number 9,331,197
- Issue date May 3, 2016
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layout configurations for integrating schottky contacts into a powe...
- Patent number 9,318,597
- Issue date Apr 19, 2016
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor devices with protective regions
- Patent number 9,306,061
- Issue date Apr 5, 2016
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with increased channel mobility and dry chemis...
- Patent number 9,269,580
- Issue date Feb 23, 2016
- Cree, Inc.
- Sarit Dhar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor devices with buried well regions and epitax...
- Patent number 9,240,476
- Issue date Jan 19, 2016
- Cree, Inc.
- Vipindis Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices in SiC using vias through N-type substrate fo...
- Patent number 9,236,433
- Issue date Jan 12, 2016
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor devices with low source resistance
- Patent number 9,142,662
- Issue date Sep 22, 2015
- Cree, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR DEVICES WITH BURIED WELL PROTECTION REGIONS
- Publication number 20190067414
- Publication date Feb 28, 2019
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Devices with Buried Well Protection Regions
- Publication number 20170092715
- Publication date Mar 30, 2017
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Buried Junction Devices in Silicon Carbide Using...
- Publication number 20170084700
- Publication date Mar 23, 2017
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES HAVING SUPERJUNCTION STRUCTURES WITH IM...
- Publication number 20170047396
- Publication date Feb 16, 2017
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER TRANSISTOR DEVICE
- Publication number 20160211360
- Publication date Jul 21, 2016
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES HAVING SUPERJUNCTION STRUCTURES WITH IM...
- Publication number 20160197201
- Publication date Jul 7, 2016
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH IMPROVED INSULATED GATE
- Publication number 20160126333
- Publication date May 5, 2016
- Cree, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Devices with Buried Well Protection Regions
- Publication number 20160005837
- Publication date Jan 7, 2016
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT STRUCTURE FOR WIDE BAND-GAP SEMICONDUCTOR MATERIALS
- Publication number 20150263145
- Publication date Sep 17, 2015
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES IN SIC USING VIAS THROUGH N-TYPE SUBSTRATE FO...
- Publication number 20150102361
- Publication date Apr 16, 2015
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT DEVICE WITH ENHANCED GATE DIELECTRIC STRUCTURE
- Publication number 20150097226
- Publication date Apr 9, 2015
- Cree, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED VERTICAL POWER TRANSISTOR AND BYPASS DIODE
- Publication number 20150084062
- Publication date Mar 26, 2015
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED VERTICAL POWER TRANSISTOR AND BYPASS DIODE
- Publication number 20150084125
- Publication date Mar 26, 2015
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A CURRENT SPREADING LAYER
- Publication number 20150084063
- Publication date Mar 26, 2015
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A POWER TRANSISTOR DEVICE AND BYPASS...
- Publication number 20150084118
- Publication date Mar 26, 2015
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYOUT CONFIGURATIONS FOR INTEGRATING SCHOTTKY CONTACTS INTO A POWE...
- Publication number 20150084119
- Publication date Mar 26, 2015
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION TECHNIQUE FOR HIGH VOLTAGE POWER DEVICES
- Publication number 20150048489
- Publication date Feb 19, 2015
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL POWER TRANSISTOR DEVICE
- Publication number 20150041886
- Publication date Feb 12, 2015
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Buried Junction Devices in Silicon Carbide Using...
- Publication number 20150028351
- Publication date Jan 29, 2015
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED GATE DIELECTRIC FOR A FIELD EFFECT DEVICE WITH A TRENCHED...
- Publication number 20150021623
- Publication date Jan 22, 2015
- Cree, Inc.
- Daniel Jenner Lichtenwalner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Junction Termination Extension Edge Terminations...
- Publication number 20150021742
- Publication date Jan 22, 2015
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Devices with Buried Well Protection Regions
- Publication number 20140264564
- Publication date Sep 18, 2014
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Devices with Buried Well Regions and Epitax...
- Publication number 20140264579
- Publication date Sep 18, 2014
- Cree, Inc.
- Vipindas Pala
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Devices with Protective Regions
- Publication number 20140264563
- Publication date Sep 18, 2014
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor Devices with Regrown P-Layers
- Publication number 20140264562
- Publication date Sep 18, 2014
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USING A CARBON VACANCY REDUCTION MATERIAL TO INCREASE AVERAGE CARRI...
- Publication number 20140070230
- Publication date Mar 13, 2014
- Cree, Inc.
- Michael John O'Loughlin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR WITH IMPROVED AVALANCHE CAPABILITY
- Publication number 20130264581
- Publication date Oct 10, 2013
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR STRUCTURE FOR REDUCED CURRENT CROWDING
- Publication number 20130146894
- Publication date Jun 13, 2013
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION BARRIER SCHOTTKY RECTIFIERS HAVING EPITAXIALLY GROWN P+-N...
- Publication number 20130140585
- Publication date Jun 6, 2013
- Power Integrations, Inc.
- Michael S. Mazzola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC DEVICES WITH HIGH BLOCKING VOLTAGE TERMINATED BY A NEGATIVE BEVEL
- Publication number 20130026493
- Publication date Jan 31, 2013
- Cree, Inc.
- Lin Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Vertical power transistor device

Seminconductor device with spreading layer

Semiconductor device with improved insulated gate

Vertical power transistor device

Monolithically integrated vertical power transistor and bypass diode

Field effect transistor devices with buried well protection regions

Semiconductor device including a power transistor device and bypass...

Using a carbon vacancy reduction material to increase average carri...

Using a carbon vacancy reduction material to increase average carri...

Field effect transistor devices with buried well protection regions

Methods of forming buried junction devices in silicon carbide using...

Methods of forming power semiconductor devices having superjunction...

Bipolar junction transistor structure for reduced current crowding

Vertical power transistor device

Bipolar junction transistor with improved avalanche capability

Enhanced gate dielectric for a field effect device with a trenched...

Field effect transistor devices with buried well protection regions

Power semiconductor devices having superjunction structures with im...

Methods of forming buried junction devices in silicon carbide using...

Semiconductor device having high performance channel

Edge termination technique for high voltage power devices having a...

Wet chemistry processes for fabricating a semiconductor device with...

SiC devices with high blocking voltage terminated by a negative bevel

Vertical power transistor device

Layout configurations for integrating schottky contacts into a powe...

Field effect transistor devices with protective regions

Semiconductor device with increased channel mobility and dry chemis...

Field effect transistor devices with buried well regions and epitax...

Semiconductor devices in SiC using vias through N-type substrate fo...

Field effect transistor devices with low source resistance

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR DEVICES WITH BURIED WELL PROTECTION REGIONS

Field Effect Transistor Devices with Buried Well Protection Regions

Methods of Forming Buried Junction Devices in Silicon Carbide Using...

POWER SEMICONDUCTOR DEVICES HAVING SUPERJUNCTION STRUCTURES WITH IM...

VERTICAL POWER TRANSISTOR DEVICE

POWER SEMICONDUCTOR DEVICES HAVING SUPERJUNCTION STRUCTURES WITH IM...

SEMICONDUCTOR DEVICE WITH IMPROVED INSULATED GATE

Field Effect Transistor Devices with Buried Well Protection Regions

IGBT STRUCTURE FOR WIDE BAND-GAP SEMICONDUCTOR MATERIALS

SEMICONDUCTOR DEVICES IN SIC USING VIAS THROUGH N-TYPE SUBSTRATE FO...

FIELD EFFECT DEVICE WITH ENHANCED GATE DIELECTRIC STRUCTURE

MONOLITHICALLY INTEGRATED VERTICAL POWER TRANSISTOR AND BYPASS DIODE

MONOLITHICALLY INTEGRATED VERTICAL POWER TRANSISTOR AND BYPASS DIODE

SEMICONDUCTOR DEVICE WITH A CURRENT SPREADING LAYER

SEMICONDUCTOR DEVICE INCLUDING A POWER TRANSISTOR DEVICE AND BYPASS...

LAYOUT CONFIGURATIONS FOR INTEGRATING SCHOTTKY CONTACTS INTO A POWE...

EDGE TERMINATION TECHNIQUE FOR HIGH VOLTAGE POWER DEVICES

VERTICAL POWER TRANSISTOR DEVICE

Methods of Forming Buried Junction Devices in Silicon Carbide Using...

ENHANCED GATE DIELECTRIC FOR A FIELD EFFECT DEVICE WITH A TRENCHED...

Methods of Forming Junction Termination Extension Edge Terminations...

Field Effect Transistor Devices with Buried Well Protection Regions

Field Effect Transistor Devices with Buried Well Regions and Epitax...

Field Effect Transistor Devices with Protective Regions

Field Effect Transistor Devices with Regrown P-Layers

USING A CARBON VACANCY REDUCTION MATERIAL TO INCREASE AVERAGE CARRI...

BIPOLAR JUNCTION TRANSISTOR WITH IMPROVED AVALANCHE CAPABILITY

BIPOLAR JUNCTION TRANSISTOR STRUCTURE FOR REDUCED CURRENT CROWDING

JUNCTION BARRIER SCHOTTKY RECTIFIERS HAVING EPITAXIALLY GROWN P+-N...

SIC DEVICES WITH HIGH BLOCKING VOLTAGE TERMINATED BY A NEGATIVE BEVEL