Lin DONG

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
P-type dipole for P-FET
- Patent number 11,996,455
- Issue date May 28, 2024
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated dipole flow for transistor
- Patent number 11,888,045
- Issue date Jan 30, 2024
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type dipole for p-FET
- Patent number 11,658,218
- Issue date May 23, 2023
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type dipole for p-FET
- Patent number 11,289,579
- Issue date Mar 29, 2022
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated dipole flow for transistor
- Patent number 11,245,022
- Issue date Feb 8, 2022
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for n-type metal oxide semiconductor (NMOS) m...
- Patent number 11,075,276
- Issue date Jul 27, 2021
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing effective oxide thickness in a semiconductor str...
- Patent number 11,062,900
- Issue date Jul 13, 2021
- Applied Materials, Inc.
- Luping Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for doping engineering and threshold voltage...
- Patent number 10,665,450
- Issue date May 26, 2020
- Applied Materials, Inc.
- Yixiong Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low thickness dependent work-function nMOS integration for metal gate
- Patent number 10,608,097
- Issue date Mar 31, 2020
- Applied Materials, Inc.
- Paul F. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface functionalization and passivation with a control layer
- Patent number 10,262,858
- Issue date Apr 16, 2019
- Applied Materials, Inc.
- Naomi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating junctions and spacers for horizontal gate al...
- Patent number 10,177,227
- Issue date Jan 8, 2019
- Applied Materials, Inc.
- Naomi Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum content control of TiAIN films
- Patent number 10,170,321
- Issue date Jan 1, 2019
- Applied Materials, Inc.
- Wenyu Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-threshold voltage structures with a lanthanum nitride film an...
- Patent number 9,748,354
- Issue date Aug 29, 2017
- Applied Materials, Inc.
- Wei V. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for forming horizontal gate all around device...
- Patent number 9,673,277
- Issue date Jun 6, 2017
- Applied Materials, Inc.
- Adam Brand
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
P-TYPE DIPOLE FOR P-FET
- Publication number 20230253466
- Publication date Aug 10, 2023
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Type Dipole For P-FET
- Publication number 20220165854
- Publication date May 26, 2022
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DIPOLE FLOW FOR TRANSISTOR
- Publication number 20220115516
- Publication date Apr 14, 2022
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Step Pre-Clean for Selective Metal Gap Fill
- Publication number 20210351032
- Publication date Nov 11, 2021
- Applied Materials, Inc.
- Xi Cen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Treatments To Improve Device Performance
- Publication number 20210193468
- Publication date Jun 24, 2021
- Applied Materials, Inc.
- Steven C.H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-Type Dipole For P-FET
- Publication number 20210098581
- Publication date Apr 1, 2021
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR CLEANING METAL CONTACTS
- Publication number 20210066064
- Publication date Mar 4, 2021
- Applied Materials, Inc.
- He REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED DIPOLE FLOW FOR TRANSISTOR
- Publication number 20200373404
- Publication date Nov 26, 2020
- Applied Materials, Inc.
- Yongjing Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REDUCING EFFECTIVE OXIDE THICKNESS IN A SEMICONDUCTOR STR...
- Publication number 20200176247
- Publication date Jun 4, 2020
- Applied Materials, Inc.
- LUPING LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR N-TYPE METAL OXIDE SEMICONDUCTOR (NMOS) M...
- Publication number 20200111885
- Publication date Apr 9, 2020
- Applied Materials, Inc.
- YONGJING LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR DOPING ENGINEERING AND THRESHOLD VOLTAGE...
- Publication number 20190057863
- Publication date Feb 21, 2019
- YIXIONG YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low Thickness Dependent Work-Function nMOS Integration For Metal Gate
- Publication number 20190019874
- Publication date Jan 17, 2019
- Applied Materials, Inc.
- Paul F. Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Aluminum Content Control of TiAIN Films
- Publication number 20180269065
- Publication date Sep 20, 2018
- Applied Materials, Inc.
- Wenyu Zhang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SURFACE FUNCTIONALIZATION AND PASSIVATION WITH A CONTROL LAYER
- Publication number 20170309479
- Publication date Oct 26, 2017
- Applied Materials, Inc.
- Naomi YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING NANOWIRES FOR HORIZONTAL GATE ALL AROUND DEV...
- Publication number 20170194430
- Publication date Jul 6, 2017
- Applied Materials, Inc.
- Bingxi Sun WOOD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-THRESHOLD VOLTAGE STRUCTURES WITH A LANTHANUM NITRIDE FILM AN...
- Publication number 20170179252
- Publication date Jun 22, 2017
- Applied Materials, Inc.
- Wei V. TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND APPARATUS FOR FORMING HORIZONTAL GATE ALL AROUND DEVICE...
- Publication number 20160111495
- Publication date Apr 21, 2016
- Applied Materials, Inc.
- ADAM BRAND
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

P-type dipole for P-FET

Integrated dipole flow for transistor

P-type dipole for p-FET

P-type dipole for p-FET

Integrated dipole flow for transistor

Methods and apparatus for n-type metal oxide semiconductor (NMOS) m...

Method of reducing effective oxide thickness in a semiconductor str...

Methods and apparatus for doping engineering and threshold voltage...

Low thickness dependent work-function nMOS integration for metal gate

Surface functionalization and passivation with a control layer

Method for fabricating junctions and spacers for horizontal gate al...

Aluminum content control of TiAIN films

Multi-threshold voltage structures with a lanthanum nitride film an...

Methods and apparatus for forming horizontal gate all around device...

Patents Applicationslast 30 patents

P-TYPE DIPOLE FOR P-FET

P-Type Dipole For P-FET

INTEGRATED DIPOLE FLOW FOR TRANSISTOR

Multi-Step Pre-Clean for Selective Metal Gap Fill

Treatments To Improve Device Performance

P-Type Dipole For P-FET

METHODS AND APPARATUS FOR CLEANING METAL CONTACTS

INTEGRATED DIPOLE FLOW FOR TRANSISTOR

METHOD OF REDUCING EFFECTIVE OXIDE THICKNESS IN A SEMICONDUCTOR STR...

METHODS AND APPARATUS FOR N-TYPE METAL OXIDE SEMICONDUCTOR (NMOS) M...

METHODS AND APPARATUS FOR DOPING ENGINEERING AND THRESHOLD VOLTAGE...

Low Thickness Dependent Work-Function nMOS Integration For Metal Gate

Aluminum Content Control of TiAIN Films

SURFACE FUNCTIONALIZATION AND PASSIVATION WITH A CONTROL LAYER

METHOD FOR FABRICATING NANOWIRES FOR HORIZONTAL GATE ALL AROUND DEV...

MULTI-THRESHOLD VOLTAGE STRUCTURES WITH A LANTHANUM NITRIDE FILM AN...

METHODS AND APPARATUS FOR FORMING HORIZONTAL GATE ALL AROUND DEVICE...