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Lin Ma

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  • Beaverton, OR, US
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Patents Grantslast 30 patents

  • Information Patent Grant

    Memory cell
    • Patent number 8,890,227
    • Issue date Nov 18, 2014
    • AP Memory Corp, USA
    • Wenliang Chen
    • H01 - BASIC ELECTRIC ELEMENTS
  • Information Patent Grant

    Low leakage current SRAM array
    • Patent number 6,560,139
    • Issue date May 6, 2003
    • Intel Corporation
    • Lin Ma
    • G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

  • Information Patent Application

    MEMORY DEVICE HAVING SEGMENTED DATA LINE STRUCTURE
    • Publication number 20240055045
    • Publication date Feb 15, 2024
    • AP MEMORY TECHNOLOGY CORPORATION
    • WEN-LIANG CHEN
    • G11 - INFORMATION STORAGE
  • Information Patent Application

    MEMORY CELL
    • Publication number 20140319592
    • Publication date Oct 30, 2014
    • Wenliang Chen
    • G11 - INFORMATION STORAGE
  • Information Patent Application

    Low leakage current SRAM array
    • Publication number 20020122329
    • Publication date Sep 5, 2002
    • Lin Ma
    • G11 - INFORMATION STORAGE