Lin Ma

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Beaverton, OR, US

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Patents Grantslast 30 patents

Information Patent Grant
Memory cell
- Patent number 8,890,227
- Issue date Nov 18, 2014
- AP Memory Corp, USA
- Wenliang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage current SRAM array
- Patent number 6,560,139
- Issue date May 6, 2003
- Intel Corporation
- Lin Ma
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR PACKAGE AND METHOD FOR IDENTIFYING INTEGRATED CIRCUIT...
- Publication number 20250004045
- Publication date Jan 2, 2025
- AP MEMORY TECHNOLOGY CORPORATION
- WENLIANG CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING SEGMENTED DATA LINE STRUCTURE
- Publication number 20240055045
- Publication date Feb 15, 2024
- AP MEMORY TECHNOLOGY CORPORATION
- WEN-LIANG CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL
- Publication number 20140319592
- Publication date Oct 30, 2014
- Wenliang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Low leakage current SRAM array
- Publication number 20020122329
- Publication date Sep 5, 2002
- Lin Ma
- G11 - INFORMATION STORAGE