Linda Romano

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor light emitting device growing active layer on texture...
- Patent number 10,312,404
- Issue date Jun 4, 2019
- Lumileds LLC
- Sungsoo Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride nanowire LED with strain modified surface active region...
- Patent number 10,205,054
- Issue date Feb 12, 2019
- GLO AB
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride nanowire LED with strain modified surface active region...
- Patent number 10,026,866
- Issue date Jul 17, 2018
- GLO AB
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting device growing active layer on texture...
- Patent number 9,911,896
- Issue date Mar 6, 2018
- Koninklijke Phillips N.V.
- Sungsoo Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride nanowire LED with strain modified surface active region...
- Patent number 9,882,086
- Issue date Jan 30, 2018
- GLO AB
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride nanowire LED with strain modified surface active region...
- Patent number 9,761,757
- Issue date Sep 12, 2017
- GLO AB
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Coalesced nanowire structures with interstitial voids and method fo...
- Patent number 9,570,651
- Issue date Feb 14, 2017
- GLO AB
- Patrik Svensson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
InGaN ohmic source contacts for vertical power devices
- Patent number 9,508,838
- Issue date Nov 29, 2016
- Avogy, Inc.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for planar regrowth in GaN electronic devices
- Patent number 9,502,544
- Issue date Nov 22, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based Schottky barrier diode with algan surface layer
- Patent number 9,450,112
- Issue date Sep 20, 2016
- Avogy, Inc.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of stress induced cleaving of semiconductor devices
- Patent number 9,412,899
- Issue date Aug 9, 2016
- GLO AB
- Scott Brad Herner
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Edge termination by ion implantation in gallium nitride
- Patent number 9,330,918
- Issue date May 3, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GaN vertical JFET utilizing a regrown channel
- Patent number 9,324,844
- Issue date Apr 26, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for diffusion and implantation in gallium nitride...
- Patent number 9,318,331
- Issue date Apr 19, 2016
- Avogy, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for doping control in gallium nitride based devices
- Patent number 9,287,389
- Issue date Mar 15, 2016
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LED submount with integrated interconnects
- Patent number 9,287,468
- Issue date Mar 15, 2016
- GLO AB
- Scott Brad Herner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride nanowire LED with strain modified surface active region...
- Patent number 9,281,442
- Issue date Mar 8, 2016
- GLO AB
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for floating guard rings in gallium nitride mater...
- Patent number 9,224,828
- Issue date Dec 29, 2015
- Avogy, Inc.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire LED structure with decreased leakage and method of making...
- Patent number 9,196,792
- Issue date Nov 24, 2015
- GLO AB
- Scott Brad Herner
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Schottky diode with buried layer in GaN materials
- Patent number 9,196,679
- Issue date Nov 24, 2015
- Avogy, Inc.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire LED structure with decreased leakage and method of making...
- Patent number 9,196,787
- Issue date Nov 24, 2015
- GLO AB
- Carl Patrik Theodor Svensson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GAN vertical JFET utilizing a regrown gate
- Patent number 9,184,305
- Issue date Nov 10, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated vertical JFET and Schottky diode
- Patent number 9,171,937
- Issue date Oct 27, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for fabricating floating guard rings in GaN mater...
- Patent number 9,171,751
- Issue date Oct 27, 2015
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gallium nitride merged P-i-N Schottky (MPS)...
- Patent number 9,171,923
- Issue date Oct 27, 2015
- Avogy, Inc.
- Andrew P. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum gallium nitride etch stop layer for gallium nitride based...
- Patent number 9,159,784
- Issue date Oct 13, 2015
- Avogy, Inc.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for formation of P-N junctions in gallium nitride...
- Patent number 9,136,116
- Issue date Sep 15, 2015
- Avogy, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for planar regrowth in GAN electronic devices
- Patent number 9,117,839
- Issue date Aug 25, 2015
- Avogy, Inc.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a gallium nitride vertical JFET with self-ali...
- Patent number 9,117,850
- Issue date Aug 25, 2015
- Avogy, Inc.
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for local control of defect density in gallium ni...
- Patent number 9,093,395
- Issue date Jul 28, 2015
- Avogy, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR LIGHT EMITTING DEVICE GROWING ACTIVE LAYER ON TEXTURE...
- Publication number 20180175236
- Publication date Jun 21, 2018
- Koninklijke Philips N.V.
- Sungsoo Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Nanowire LED with Strain Modified Surface Active Region...
- Publication number 20180145218
- Publication date May 24, 2018
- GLO AB
- Linda ROMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE NANOWIRE LED WITH STRAIN MODIFIED SURFACE ACTIVE REGION...
- Publication number 20170345969
- Publication date Nov 30, 2017
- GLO AB
- Linda ROMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Nanowire LED with Strain Modified Surface Active Region...
- Publication number 20170236975
- Publication date Aug 17, 2017
- GLO AB
- Linda ROMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FO...
- Publication number 20170170261
- Publication date Jun 15, 2017
- GLO AB
- Patrik SVENSSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE NANOWIRE LED WITH STRAIN MODIFIED SURFACE ACTIVE REGION...
- Publication number 20160260866
- Publication date Sep 8, 2016
- GLO AB
- Linda ROMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE
- Publication number 20160190351
- Publication date Jun 30, 2016
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A...
- Publication number 20160190296
- Publication date Jun 30, 2016
- AVOGY, INC.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE...
- Publication number 20160043182
- Publication date Feb 11, 2016
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS
- Publication number 20160043198
- Publication date Feb 11, 2016
- AVOGY, INC.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR PLANAR REGROWTH IN GAN ELECTRONIC DEVICES
- Publication number 20150340476
- Publication date Nov 26, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...
- Publication number 20150340514
- Publication date Nov 26, 2015
- AVOGY, INC.
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NI...
- Publication number 20150325677
- Publication date Nov 12, 2015
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INGAN OHMIC SOURCE CONTACTS FOR VERTICAL POWER DEVICES
- Publication number 20150255582
- Publication date Sep 10, 2015
- AVOGY, INC.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FO...
- Publication number 20150221821
- Publication date Aug 6, 2015
- GLO AB
- Patrik SVENSSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE NANOWIRE LED WITH STRAIN MODIFIED SURFACE ACTIVE REGION...
- Publication number 20150207028
- Publication date Jul 23, 2015
- GLO AB
- Linda ROMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EDGE TERMINATION BY ION IMPLANTATION IN GALLIUM NITRIDE
- Publication number 20150200097
- Publication date Jul 16, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS
- Publication number 20150179733
- Publication date Jun 25, 2015
- AVOGY, INC.
- Andrew Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF LOCATING DIFFERENTLY SHAPED OR DIFFERENTLY SIZED LED DIE...
- Publication number 20150179894
- Publication date Jun 25, 2015
- GLO AB
- Scott Brad Herner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED SUBMOUNT WITH INTEGRATED INTERCONNECTS
- Publication number 20150179895
- Publication date Jun 25, 2015
- GLO AB
- Scott Brad Herner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES
- Publication number 20150155372
- Publication date Jun 4, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF STRESS INDUCED CLEAVING OF SEMICONDUCTOR DEVICES
- Publication number 20150144968
- Publication date May 28, 2015
- GLO AB
- Scott Brad Herner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE
- Publication number 20150140746
- Publication date May 21, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN CHANNEL
- Publication number 20150132899
- Publication date May 14, 2015
- AVOGY, INC.
- Isik C. Kizilyalli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR DIFFUSION AND IMPLANTATION IN GALLIUM NITRIDE...
- Publication number 20150017792
- Publication date Jan 15, 2015
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER
- Publication number 20140374769
- Publication date Dec 25, 2014
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...
- Publication number 20140370669
- Publication date Dec 18, 2014
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanowire LED Structure with Decreased Leakage and Method of Making...
- Publication number 20140361244
- Publication date Dec 11, 2014
- Carl Patrik Theodor Svensson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS)...
- Publication number 20140287570
- Publication date Sep 25, 2014
- Andrew P. Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanowire LED Structure with Decreased Leakage and Method of Making...
- Publication number 20140284551
- Publication date Sep 25, 2014
- Scott Brad Herner
- B82 - NANO-TECHNOLOGY

Linda Romano

Person

Patents Grantslast 30 patents

Semiconductor light emitting device growing active layer on texture...

III-nitride nanowire LED with strain modified surface active region...

III-nitride nanowire LED with strain modified surface active region...

Semiconductor light emitting device growing active layer on texture...

III-nitride nanowire LED with strain modified surface active region...

III-nitride nanowire LED with strain modified surface active region...

Coalesced nanowire structures with interstitial voids and method fo...

InGaN ohmic source contacts for vertical power devices

Method and system for planar regrowth in GaN electronic devices

GaN-based Schottky barrier diode with algan surface layer

Method of stress induced cleaving of semiconductor devices

Edge termination by ion implantation in gallium nitride

Method and system for a GaN vertical JFET utilizing a regrown channel

Method and system for diffusion and implantation in gallium nitride...

Method and system for doping control in gallium nitride based devices

LED submount with integrated interconnects

III-nitride nanowire LED with strain modified surface active region...

Method and system for floating guard rings in gallium nitride mater...

Nanowire LED structure with decreased leakage and method of making...

Schottky diode with buried layer in GaN materials

Nanowire LED structure with decreased leakage and method of making...

Method and system for a GAN vertical JFET utilizing a regrown gate

Monolithically integrated vertical JFET and Schottky diode

Method and system for fabricating floating guard rings in GaN mater...

Method of fabricating a gallium nitride merged P-i-N Schottky (MPS)...

Aluminum gallium nitride etch stop layer for gallium nitride based...

Method and system for formation of P-N junctions in gallium nitride...

Method and system for planar regrowth in GAN electronic devices

Method and system for a gallium nitride vertical JFET with self-ali...

Method and system for local control of defect density in gallium ni...

Patents Applicationslast 30 patents

SEMICONDUCTOR LIGHT EMITTING DEVICE GROWING ACTIVE LAYER ON TEXTURE...

III-Nitride Nanowire LED with Strain Modified Surface Active Region...

III-NITRIDE NANOWIRE LED WITH STRAIN MODIFIED SURFACE ACTIVE REGION...

III-Nitride Nanowire LED with Strain Modified Surface Active Region...

COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FO...

III-NITRIDE NANOWIRE LED WITH STRAIN MODIFIED SURFACE ACTIVE REGION...

METHOD AND SYSTEM FOR GAN VERTICAL JFET UTILIZING A REGROWN GATE

GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A...

METHOD AND SYSTEM FOR FORMATION OF P-N JUNCTIONS IN GALLIUM NITRIDE...

SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS

METHOD AND SYSTEM FOR PLANAR REGROWTH IN GAN ELECTRONIC DEVICES

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...

METHOD AND SYSTEM FOR LOCAL CONTROL OF DEFECT DENSITY IN GALLIUM NI...

INGAN OHMIC SOURCE CONTACTS FOR VERTICAL POWER DEVICES

COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FO...

III-NITRIDE NANOWIRE LED WITH STRAIN MODIFIED SURFACE ACTIVE REGION...

EDGE TERMINATION BY ION IMPLANTATION IN GALLIUM NITRIDE

SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS

METHODS OF LOCATING DIFFERENTLY SHAPED OR DIFFERENTLY SIZED LED DIE...

LED SUBMOUNT WITH INTEGRATED INTERCONNECTS

METHOD AND SYSTEM FOR DOPING CONTROL IN GALLIUM NITRIDE BASED DEVICES

METHOD OF STRESS INDUCED CLEAVING OF SEMICONDUCTOR DEVICES

MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE

METHOD AND SYSTEM FOR A GAN VERTICAL JFET UTILIZING A REGROWN CHANNEL

METHOD AND SYSTEM FOR DIFFUSION AND IMPLANTATION IN GALLIUM NITRIDE...

GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...

Nanowire LED Structure with Decreased Leakage and Method of Making...

METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS)...

Nanowire LED Structure with Decreased Leakage and Method of Making...