Lingguo ZHANG

Person

Hefei, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method for forming memory and memory
- Patent number 12,178,036
- Issue date Dec 24, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Lintao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing memory using pseudo bit line structures an...
- Patent number 12,127,398
- Issue date Oct 22, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Er-Xuan Ping
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and method for forming the same
- Patent number 12,127,397
- Issue date Oct 22, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Lingguo Zhang
Information Patent Grant
Method for manufacturing memory and same
- Patent number 11,985,815
- Issue date May 14, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Er-Xuan Ping
Information Patent Grant
Manufacturing method of a memory and a memory
- Patent number 11,974,427
- Issue date Apr 30, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Er-Xuan Ping
Information Patent Grant
Method for forming storage node contact structure and semiconductor...
- Patent number 11,871,562
- Issue date Jan 9, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Erxuan Ping
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing memory and same
- Patent number 11,856,758
- Issue date Dec 26, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Er-Xuan Ping

Patents Applicationslast 30 patents

Information Patent Application
FORMING METHOD OF MEMORY AND MEMORY
- Publication number 20230062348
- Publication date Mar 2, 2023
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Lingguo ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY FORMING METHOD AND MEMORY
- Publication number 20220328494
- Publication date Oct 13, 2022
- ChangXin Memory Technologies, Inc.
- Lingguo ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING STORAGE NODE CONTACT STRUCTURE AND SEMICONDUCTOR...
- Publication number 20220208772
- Publication date Jun 30, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Erxuan PING
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING STORAGE NODE CONTACT STRUCTURE AND SEMICONDUCTOR...
- Publication number 20220208773
- Publication date Jun 30, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Erxuan PING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING MEMORY AND SAME
- Publication number 20220093607
- Publication date Mar 24, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Er-Xuan PING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING MEMORY AND SAME
- Publication number 20220093608
- Publication date Mar 24, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Er-Xuan PING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF A MEMORY AND A MEMORY
- Publication number 20220085032
- Publication date Mar 17, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Er-Xuan Ping
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING MEMORY AND SAME
- Publication number 20220068937
- Publication date Mar 3, 2022
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Er-Xuan Ping
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING MEMORY AND MEMORY
- Publication number 20210398984
- Publication date Dec 23, 2021
- Changxin Memory Technologies, Inc.
- Lintao ZHANG
- G11 - INFORMATION STORAGE

Lingguo ZHANG

Person

Patents Grantslast 30 patents

Method for forming memory and memory

Method for manufacturing memory using pseudo bit line structures an...

Memory device and method for forming the same

Method for manufacturing memory and same

Manufacturing method of a memory and a memory

Method for forming storage node contact structure and semiconductor...

Method for manufacturing memory and same

Patents Applicationslast 30 patents

FORMING METHOD OF MEMORY AND MEMORY

MEMORY FORMING METHOD AND MEMORY

METHOD FOR FORMING STORAGE NODE CONTACT STRUCTURE AND SEMICONDUCTOR...

METHOD FOR FORMING STORAGE NODE CONTACT STRUCTURE AND SEMICONDUCTOR...

METHOD FOR MANUFACTURING MEMORY AND SAME

METHOD FOR MANUFACTURING MEMORY AND SAME

MANUFACTURING METHOD OF A MEMORY AND A MEMORY

METHOD FOR MANUFACTURING MEMORY AND SAME

METHOD FOR FORMING MEMORY AND MEMORY