Lingpeng GUAN

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Bottom source trench MOSFET with shield electrode
- Patent number 11,869,967
- Issue date Jan 9, 2024
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Sik Lui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and circuit for sensing MOSFET temperature for load switch a...
- Patent number 11,774,296
- Issue date Oct 3, 2023
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Zhenyu Wang
- G01 - MEASURING TESTING
Information Patent Grant
IGBT light load efficiency
- Patent number 11,756,993
- Issue date Sep 12, 2023
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device incorporating epitaxial layer field stop zone
- Patent number 11,749,716
- Issue date Sep 5, 2023
- Alpha and Omega Semiconductor (Cayman) LTD
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated planar-trench gate power MOSFET
- Patent number 11,728,423
- Issue date Aug 15, 2023
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sawtooh electric field drift region structure for planar and trench...
- Patent number 11,594,613
- Issue date Feb 28, 2023
- Alpha & Omega Semiconductor, Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas dopant doped deep trench super junction high voltage MOSFET
- Patent number 11,569,345
- Issue date Jan 31, 2023
- Alpha and Omega Semiconductor (Cayman) LTD
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming super-junction corner and termination structure...
- Patent number 11,508,819
- Issue date Nov 22, 2022
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Improving IGBT light load efficiency
- Patent number 11,342,410
- Issue date May 24, 2022
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making reverse conducting insulated gate bipolar transistor
- Patent number 11,101,137
- Issue date Aug 24, 2021
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Zhiqiang Niu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sawtooh electric field drift region structure for planar and trench...
- Patent number 11,038,037
- Issue date Jun 15, 2021
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction corner and termination structure with graded sidewalls
- Patent number 11,038,022
- Issue date Jun 15, 2021
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device incorporating epitaxial layer field stop zone
- Patent number 11,031,465
- Issue date Jun 8, 2021
- Alpha and Omega Semiconductor (Cayman) LTD
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with self-aligned body contact with spacer
- Patent number 10,930,591
- Issue date Feb 23, 2021
- Vishay SIliconix, LLC
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combined IGBT and superjunction MOSFET device with tuned switching...
- Patent number 10,931,276
- Issue date Feb 23, 2021
- Alpha and Omega Semiconductor (Cayman) LTD
- Bum-Seok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with self-aligned body contact with spacer
- Patent number 10,903,163
- Issue date Jan 26, 2021
- Vishay SIliconix, LLC
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming including superjunction...
- Patent number 10,755,931
- Issue date Aug 25, 2020
- Alpha and Omega Semiconductor Incorporated
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SGT superjunction MOSFET structure
- Patent number 10,644,102
- Issue date May 5, 2020
- Alpha and Omega Semiconductor (Cayman) LTD
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction corner and termination structure with improved break...
- Patent number 10,580,868
- Issue date Mar 3, 2020
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a lateral super-junction MOSFET device and termi...
- Patent number 10,446,679
- Issue date Oct 15, 2019
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including superjunction structure formed using...
- Patent number 10,276,387
- Issue date Apr 30, 2019
- Alpha and Omega Semiconductor Incorporated
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a lateral super-junction MOSFET device and termi...
- Patent number 10,243,072
- Issue date Mar 26, 2019
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated Schottky diode in high voltage semiconductor device
- Patent number 10,177,221
- Issue date Jan 8, 2019
- Alpha and Omega Semiconductor Incorporated
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination design for high voltage device
- Patent number 10,069,005
- Issue date Sep 4, 2018
- Alpha and Omega Semiconductor Incorporated
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral super-junction MOSFET device and termination structure
- Patent number 9,991,380
- Issue date Jun 5, 2018
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uni-directional transient voltage suppressor (TVS)
- Patent number 9,978,740
- Issue date May 22, 2018
- Alpha and Omega Semiconductor Incorporated
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transient voltage suppressor (TVS) with reduced breakdown voltage
- Patent number 9,911,728
- Issue date Mar 6, 2018
- Alpha and Omega Semiconductor Incorporated
- Ning Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated Schottky diode in high voltage semiconductor device
- Patent number 9,876,073
- Issue date Jan 23, 2018
- Alpha and Omega Semiconductor Incorporated
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate trench power mosfet with protected shield oxide
- Patent number 9,865,694
- Issue date Jan 9, 2018
- Alpha and Omega Semiconductor Incorporated
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage field balance metal oxide field effect transistor (FBM)
- Patent number 9,865,678
- Issue date Jan 9, 2018
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PROGRAMMABLE GATE DESIGN FOR MULTIPLE GATE TRANSISTOR
- Publication number 20250081517
- Publication date Mar 6, 2025
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Wenwen Li
Information Patent Application
LOW THRESHOLD HIGH DENSITY TRENCH MOSFET
- Publication number 20250072045
- Publication date Feb 27, 2025
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Sik Lui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL P-BODY DOSE REVERSE-CONDUCTING (DPD-RC) IGBT STRUCTURE
- Publication number 20240332287
- Publication date Oct 3, 2024
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Zhibo Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND CIRCUIT FOR SENSING MOSFET TEMPERATURE FOR LOAD SWITCH A...
- Publication number 20230147081
- Publication date May 11, 2023
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Zhenyu Wang
- G01 - MEASURING TESTING
Information Patent Application
BOTTOM SOURCE TRENCH MOSFET WITH SHIELD ELECTRODE
- Publication number 20230049581
- Publication date Feb 16, 2023
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Sik Lui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED PLANAR-TRENCH GATE POWER MOSFET
- Publication number 20220344505
- Publication date Oct 27, 2022
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT LIGHT LOAD EFFICIENCY
- Publication number 20220262898
- Publication date Aug 18, 2022
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS DOPANT DOPED DEEP TRENCH SUPER JUNCTION HIGH VOLTAGE MOSFET
- Publication number 20220165843
- Publication date May 26, 2022
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Wenjun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SAWTOOH ELECTRIC FIELD DRIFT REGION STRUCTURE FOR PLANAR AND TRENCH...
- Publication number 20210305406
- Publication date Sep 30, 2021
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE
- Publication number 20210273046
- Publication date Sep 2, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE...
- Publication number 20210257461
- Publication date Aug 19, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVING IGBT LIGHT LOAD EFFICIENCY
- Publication number 20210098569
- Publication date Apr 1, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SAWTOOH ELECTRIC FIELD DRIFT REGION STRUCTURE FOR PLANAR AND TRENCH...
- Publication number 20200303513
- Publication date Sep 24, 2020
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE WITH GRADED SIDEWALLS
- Publication number 20200161431
- Publication date May 21, 2020
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE WITH IMPROVED BREAK...
- Publication number 20190305088
- Publication date Oct 3, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE
- Publication number 20190273131
- Publication date Sep 5, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET WITH SELF-ALIGNED BODY CONTACT WITH SPACER
- Publication number 20190237403
- Publication date Aug 1, 2019
- Lingpeng GUAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING INCLUDING SUPERJUNCTION...
- Publication number 20190214261
- Publication date Jul 11, 2019
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL SGT SUPERJUNCTION MOSFET STRUCTURE
- Publication number 20190206988
- Publication date Jul 4, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A LATERAL SUPER-JUNCTION MOSFET DEVICE AND TERMI...
- Publication number 20190165169
- Publication date May 30, 2019
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE
- Publication number 20190006461
- Publication date Jan 3, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A LATERAL SUPER-JUNCTION MOSFET DEVICE AND TERMI...
- Publication number 20180254342
- Publication date Sep 6, 2018
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SCHOTTKY DIODE IN HIGH VOLTAGE SEMICONDUCTOR DEVICE
- Publication number 20180212022
- Publication date Jul 26, 2018
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL SUPER-JUNCTION MOSFET DEVICE AND TERMINATION STRUCTURE
- Publication number 20170365710
- Publication date Dec 21, 2017
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED SCHOTTKY DIODE IN HIGH VOLTAGE SEMICONDUCTOR DEVICE
- Publication number 20170213887
- Publication date Jul 27, 2017
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSIENT VOLTAGE SUPPRESSOR (TVS) WITH REDUCED BREAKDOWN VOLTAGE
- Publication number 20170179107
- Publication date Jun 22, 2017
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Ning Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION DESIGN FOR HIGH VOLTAGE DEVICE
- Publication number 20170148910
- Publication date May 25, 2017
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SUPERJUNCTION STRUCTURE FORMED USING...
- Publication number 20170148632
- Publication date May 25, 2017
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE TRENCH POWER MOSFET WITH PROTECTED SHIELD OXIDE
- Publication number 20170133473
- Publication date May 11, 2017
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Yeeheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHODS FOR ACCURATELY ALIGNED AND SELF-BALANCED SUPE...
- Publication number 20170125514
- Publication date May 4, 2017
- Lingpeng Guan
- H01 - BASIC ELECTRIC ELEMENTS

Lingpeng GUAN

Person

Patents Grantslast 30 patents

Bottom source trench MOSFET with shield electrode

Method and circuit for sensing MOSFET temperature for load switch a...

IGBT light load efficiency

Semiconductor device incorporating epitaxial layer field stop zone

Integrated planar-trench gate power MOSFET

Sawtooh electric field drift region structure for planar and trench...

Gas dopant doped deep trench super junction high voltage MOSFET

Method for forming super-junction corner and termination structure...

Improving IGBT light load efficiency

Method of making reverse conducting insulated gate bipolar transistor

Sawtooh electric field drift region structure for planar and trench...

Super-junction corner and termination structure with graded sidewalls

Semiconductor device incorporating epitaxial layer field stop zone

Trench MOSFET with self-aligned body contact with spacer

Combined IGBT and superjunction MOSFET device with tuned switching...

Trench MOSFET with self-aligned body contact with spacer

Semiconductor device and method of forming including superjunction...

SGT superjunction MOSFET structure

Super-junction corner and termination structure with improved break...

Method for forming a lateral super-junction MOSFET device and termi...

Semiconductor device including superjunction structure formed using...

Method for forming a lateral super-junction MOSFET device and termi...

Integrated Schottky diode in high voltage semiconductor device

Termination design for high voltage device

Lateral super-junction MOSFET device and termination structure

Uni-directional transient voltage suppressor (TVS)

Transient voltage suppressor (TVS) with reduced breakdown voltage

Integrated Schottky diode in high voltage semiconductor device

Split-gate trench power mosfet with protected shield oxide

High voltage field balance metal oxide field effect transistor (FBM)

Patents Applicationslast 30 patents

PROGRAMMABLE GATE DESIGN FOR MULTIPLE GATE TRANSISTOR

LOW THRESHOLD HIGH DENSITY TRENCH MOSFET

DUAL P-BODY DOSE REVERSE-CONDUCTING (DPD-RC) IGBT STRUCTURE

METHOD AND CIRCUIT FOR SENSING MOSFET TEMPERATURE FOR LOAD SWITCH A...

BOTTOM SOURCE TRENCH MOSFET WITH SHIELD ELECTRODE

INTEGRATED PLANAR-TRENCH GATE POWER MOSFET

IGBT LIGHT LOAD EFFICIENCY

GAS DOPANT DOPED DEEP TRENCH SUPER JUNCTION HIGH VOLTAGE MOSFET

SAWTOOH ELECTRIC FIELD DRIFT REGION STRUCTURE FOR PLANAR AND TRENCH...

SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE

METHOD FOR FORMING SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE...

IMPROVING IGBT LIGHT LOAD EFFICIENCY

SAWTOOH ELECTRIC FIELD DRIFT REGION STRUCTURE FOR PLANAR AND TRENCH...

SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE WITH GRADED SIDEWALLS

SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE WITH IMPROVED BREAK...

SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE

TRENCH MOSFET WITH SELF-ALIGNED BODY CONTACT WITH SPACER

SEMICONDUCTOR DEVICE AND METHOD OF FORMING INCLUDING SUPERJUNCTION...

NOVEL SGT SUPERJUNCTION MOSFET STRUCTURE

METHOD FOR FORMING A LATERAL SUPER-JUNCTION MOSFET DEVICE AND TERMI...

SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE

METHOD FOR FORMING A LATERAL SUPER-JUNCTION MOSFET DEVICE AND TERMI...

INTEGRATED SCHOTTKY DIODE IN HIGH VOLTAGE SEMICONDUCTOR DEVICE

LATERAL SUPER-JUNCTION MOSFET DEVICE AND TERMINATION STRUCTURE

INTEGRATED SCHOTTKY DIODE IN HIGH VOLTAGE SEMICONDUCTOR DEVICE

TRANSIENT VOLTAGE SUPPRESSOR (TVS) WITH REDUCED BREAKDOWN VOLTAGE

TERMINATION DESIGN FOR HIGH VOLTAGE DEVICE

SEMICONDUCTOR DEVICE INCLUDING SUPERJUNCTION STRUCTURE FORMED USING...

SPLIT-GATE TRENCH POWER MOSFET WITH PROTECTED SHIELD OXIDE

MANUFACTURING METHODS FOR ACCURATELY ALIGNED AND SELF-BALANCED SUPE...