Linliu Kung

Person

Taipei, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Contact process using Y-contact etching
- Patent number 6,100,577
- Issue date Aug 8, 2000
- Vanguard International Semiconductor Corporation
- Kung Linliu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact process using Y-contact etching
- Patent number 5,950,104
- Issue date Sep 7, 1999
- Vanguard International Semiconductor Corporation
- Kung Linliu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming residue free patterned polysilicon layer contain...
- Patent number 5,924,000
- Issue date Jul 13, 1999
- Vanguard International Semiconductor Corporation
- Kung Linliu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a narrow polysilicon gate with i-line lithography
- Patent number 5,902,133
- Issue date May 11, 1999
- Vanguard International Semiconductor Corporation
- Kung Linliu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planarization process using artificial gravity
- Patent number 5,865,891
- Issue date Feb 2, 1999
- Vanguard International Semiconductor Corporation
- Kung Linliu
- B24 - GRINDING POLISHING
Information Patent Grant
Metallization process using artificial gravity
- Patent number 5,866,478
- Issue date Feb 2, 1999
- Vanguard International Semiconductor
- Kung Linliu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling linewidth by etching bottom anti-reflective...
- Patent number 5,773,199
- Issue date Jun 30, 1998
- Vanguard International Semiconductor Corporation
- Kung Linliu
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Planarization process using artificial gravity
- Patent number 5,714,417
- Issue date Feb 3, 1998
- Vanguard International Semiconductor Corporation
- Linliu Kung
- B24 - GRINDING POLISHING
Information Patent Grant
Method of manufacturing a DRAM cell having a double-crown capacitor...
- Patent number 5,688,713
- Issue date Nov 18, 1997
- Vanguard International Semiconductor Corporation
- Kung Linliu
- H01 - BASIC ELECTRIC ELEMENTS

Linliu Kung

Person

Patents Grantslast 30 patents

Contact process using Y-contact etching

Contact process using Y-contact etching

Method for forming residue free patterned polysilicon layer contain...

Method of forming a narrow polysilicon gate with i-line lithography

Planarization process using artificial gravity

Metallization process using artificial gravity

Method for controlling linewidth by etching bottom anti-reflective...

Planarization process using artificial gravity

Method of manufacturing a DRAM cell having a double-crown capacitor...