Liu Jiang

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Preventing dielectric void over trench isolation region
- Patent number 11,171,036
- Issue date Nov 9, 2021
- GLOBALFOUNDRIES U.S. INC.
- Yongjun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures in a wide gate pitch region of semiconduct...
- Patent number 11,164,794
- Issue date Nov 2, 2021
- GLOBALFOUNDRIES U.S. INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap regions of a semiconductor device
- Patent number 11,018,221
- Issue date May 25, 2021
- GLOBALFOUNDRIES U.S. INC.
- Chun Yu Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single diffusion break device for FDSOI
- Patent number 10,957,578
- Issue date Mar 23, 2021
- GLOBALFOUNDRIES U.S. INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of enhanced faceted raised source/drain EPI material for...
- Patent number 10,825,897
- Issue date Nov 3, 2020
- GLOBALFOUNDRIES Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure with dielectric bar containing gate to reduce effe...
- Patent number 10,797,049
- Issue date Oct 6, 2020
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of enhanced faceted raised source/drain epi material for...
- Patent number 10,777,642
- Issue date Sep 15, 2020
- GLOBALFOUNDRIES Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted epitaxial source/drain regions
- Patent number 10,756,184
- Issue date Aug 25, 2020
- GLOBALFOUNDRIES Inc.
- George R. Mulfinger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors with improved dielectric gap fill
- Patent number 10,546,775
- Issue date Jan 28, 2020
- GLOBALFOUNDRIES Inc.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PREVENTING DIELECTRIC VOID OVER TRENCH ISOLATION REGION
- Publication number 20210111065
- Publication date Apr 15, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Yongjun Shi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP REGIONS OF A SEMICONDUCTOR DEVICE
- Publication number 20210050412
- Publication date Feb 18, 2021
- GLOBALFOUNDRIES INC.
- Chun Yu WONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES IN A WIDE GATE PITCH REGION OF SEMICONDUCT...
- Publication number 20210035869
- Publication date Feb 4, 2021
- GLOBALFOUNDRIES INC.
- WEI HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF ENHANCED FACETED RAISED SOURCE/DRAIN EPI MATERIAL FOR...
- Publication number 20200243646
- Publication date Jul 30, 2020
- GLOBALFOUNDRIES INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF ENHANCED FACETED RAISED SOURCE/DRAIN EPI MATERIAL FOR...
- Publication number 20200243645
- Publication date Jul 30, 2020
- GLOBALFOUNDRIES INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACETED EPITAXIAL SOURCE/DRAIN REGIONS
- Publication number 20200144365
- Publication date May 7, 2020
- GLOBALFOUNDRIES INC.
- George R. MULFINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURE WITH DIELECTRIC BAR CONTAINING GATE TO REDUCE EFFE...
- Publication number 20200135723
- Publication date Apr 30, 2020
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE DIFFUSION BREAK DEVICE FOR FDSOI
- Publication number 20200105584
- Publication date Apr 2, 2020
- GLOBALFOUNDRIES INC.
- Wei HONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-EFFECT TRANSISTORS WITH IMPROVED DIELECTRIC GAP FILL
- Publication number 20200043779
- Publication date Feb 6, 2020
- GLOBALFOUNDRIES INC.
- Wei Hong
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Preventing dielectric void over trench isolation region

Semiconductor structures in a wide gate pitch region of semiconduct...

Air gap regions of a semiconductor device

Single diffusion break device for FDSOI

Formation of enhanced faceted raised source/drain EPI material for...

FinFET structure with dielectric bar containing gate to reduce effe...

Formation of enhanced faceted raised source/drain epi material for...

Faceted epitaxial source/drain regions

Field-effect transistors with improved dielectric gap fill

Patents Applicationslast 30 patents

PREVENTING DIELECTRIC VOID OVER TRENCH ISOLATION REGION

AIR GAP REGIONS OF A SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURES IN A WIDE GATE PITCH REGION OF SEMICONDUCT...

FORMATION OF ENHANCED FACETED RAISED SOURCE/DRAIN EPI MATERIAL FOR...

FORMATION OF ENHANCED FACETED RAISED SOURCE/DRAIN EPI MATERIAL FOR...

FACETED EPITAXIAL SOURCE/DRAIN REGIONS

FINFET STRUCTURE WITH DIELECTRIC BAR CONTAINING GATE TO REDUCE EFFE...

SINGLE DIFFUSION BREAK DEVICE FOR FDSOI

FIELD-EFFECT TRANSISTORS WITH IMPROVED DIELECTRIC GAP FILL