Liyao Liu

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
Method for cutting off FIN field effect transistor
- Patent number 11,640,910
- Issue date May 2, 2023
- Shanghai Huali Integrated Circuit Corporation
- Yenchan Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET transistor cut etching process method
- Patent number 11,637,194
- Issue date Apr 25, 2023
- Shanghai Huali Integrated Circuit Corporation
- Yenchan Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a 14nm-node BEOL 32nm-width metal
- Patent number 11,393,715
- Issue date Jul 19, 2022
- Shanghai Huali Integrated Circuit Corporation
- Yongji Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making self-aligned double pattern
- Patent number 11,270,891
- Issue date Mar 8, 2022
- Shanghai Huali Integrated Circuit Corporation
- Yenchan Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process method for cutting polysilicon gate of FinFET transistor
- Patent number 11,152,263
- Issue date Oct 19, 2021
- Shanghai Huali Integrated Circuit Corporation
- Jhencyuan Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METAL GATE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220246762
- Publication date Aug 4, 2022
- Shanghai Huali Integrated Circuit Corporation
- Jhencyuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR CUTTING OFF FIN FIELD EFFECT TRANSISTOR
- Publication number 20220102154
- Publication date Mar 31, 2022
- Shanghai Huali Integrated Circuit Corporation
- Yenchan Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Making Self-Aligned Double Pattern
- Publication number 20210391183
- Publication date Dec 16, 2021
- Shanghai Huali Integrated Circuit Corporation
- Yenchan Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET Transistor Cut Etching Process Method
- Publication number 20210119023
- Publication date Apr 22, 2021
- Shanghai Huali Integrated Circuit Corporation
- Yenchan Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process Method for Cutting Polysilicon Gate of FinFET Transistor
- Publication number 20210118741
- Publication date Apr 22, 2021
- Shanghai Huali Integrated Circuit Corporation
- Jhencyuan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing a 14nm-Node BEOL 32nm-Width Metal
- Publication number 20210098282
- Publication date Apr 1, 2021
- Shanghai Huali Integrated Circuit Corporation
- Yongji Mao
- H01 - BASIC ELECTRIC ELEMENTS