Ljubo Radic

Person

Torrance, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating a power semiconductor device
- Patent number 10,483,359
- Issue date Nov 19, 2019
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a field plate double trench having a thic...
- Patent number 9,735,241
- Issue date Aug 15, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface control in a bipolar junction transistor
- Patent number 9,437,717
- Issue date Sep 6, 2016
- GLOBALFOUNDRIES Inc.
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device with a field plate trench having a thick botto...
- Patent number 9,299,793
- Issue date Mar 29, 2016
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a thick bottom field plate trench having...
- Patent number 9,202,882
- Issue date Dec 1, 2015
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interface control in a bipolar junction transistor
- Patent number 8,603,883
- Issue date Dec 10, 2013
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING

Patents Applicationslast 30 patents

Information Patent Application
Method of Fabricating a Power Semiconductor Device
- Publication number 20170330942
- Publication date Nov 16, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Low RDSON and High Breakdown Voltage
- Publication number 20150325685
- Publication date Nov 12, 2015
- International Rectifier Corporation
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Field Plate Trench Having a Thick Botto...
- Publication number 20140339669
- Publication date Nov 20, 2014
- International Rectifier Corporation
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Thick Bottom Field Plate Trench Having...
- Publication number 20140339670
- Publication date Nov 20, 2014
- International Rectifier Corporation
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with a Field Plate Double Trench Having a Thic...
- Publication number 20140339651
- Publication date Nov 20, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACE CONTROL IN A BIPOLAR JUNCTION TRANSISTOR
- Publication number 20130334664
- Publication date Dec 19, 2013
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTERFACE CONTROL IN A BIPOLAR JUNCTION TRANSISTOR
- Publication number 20130119436
- Publication date May 16, 2013
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING

Ljubo Radic

Person

Patents Grantslast 30 patents

Method of fabricating a power semiconductor device

Semiconductor device with a field plate double trench having a thic...

Interface control in a bipolar junction transistor

Semiconductor device with a field plate trench having a thick botto...

Semiconductor device with a thick bottom field plate trench having...

Interface control in a bipolar junction transistor

Patents Applicationslast 30 patents

Method of Fabricating a Power Semiconductor Device

Power Semiconductor Device with Low RDSON and High Breakdown Voltage

Semiconductor Device with a Field Plate Trench Having a Thick Botto...

Semiconductor Device with a Thick Bottom Field Plate Trench Having...

Semiconductor Device with a Field Plate Double Trench Having a Thic...

INTERFACE CONTROL IN A BIPOLAR JUNCTION TRANSISTOR

INTERFACE CONTROL IN A BIPOLAR JUNCTION TRANSISTOR