Loi D. Nguyen

Person

Agoura Hills, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Structure and method for making FETs and HEMTs insensitive to hydro...
- Patent number 5,652,444
- Issue date Jul 29, 1997
- Hughes Electronics
- Minh V. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process for Al.sub.x In.sub.1-x As/Ga.sub.y In.sub.1-y...
- Patent number 5,646,069
- Issue date Jul 8, 1997
- Hughes Aircraft Company
- Linda Jelloian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for hydrogen treatment of field effect transistors for use i...
- Patent number 5,595,917
- Issue date Jan 21, 1997
- Hughes Aircraft Company
- Michael J. Delaney
- B24 - GRINDING POLISHING
Information Patent Grant
High yield sub-micron gate FETs
- Patent number 5,539,222
- Issue date Jul 23, 1996
- Hughes Aircraft Company
- Minh V. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High yield electron-beam gate fabrication method for sub-micron gat...
- Patent number 5,432,119
- Issue date Jul 11, 1995
- Hughes Aircraft Company
- Minh V. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating inverted modulation-doped heterostructure
- Patent number 5,322,808
- Issue date Jun 21, 1994
- Hughes Aircraft Company
- April S. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hemt structure with passivated donor layer
- Patent number 5,172,197
- Issue date Dec 15, 1992
- Hughes Aircraft Company
- Loi D. Nguyen
- H01 - BASIC ELECTRIC ELEMENTS

Loi D. Nguyen

Person

Patents Grantslast 30 patents

Structure and method for making FETs and HEMTs insensitive to hydro...

Fabrication process for Al.sub.x In.sub.1-x As/Ga.sub.y In.sub.1-y...

Method for hydrogen treatment of field effect transistors for use i...

High yield sub-micron gate FETs

High yield electron-beam gate fabrication method for sub-micron gat...

Method of fabricating inverted modulation-doped heterostructure

Hemt structure with passivated donor layer