Long-Shih LIN

Person

Zhubei City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Hybrid node chiplet stacking design
- Patent number 12,039,244
- Issue date Jul 16, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jen-Yuan Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method of making bipolar transistor
- Patent number 11,233,121
- Issue date Jan 25, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Hsiung Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making bipolar transistor
- Patent number 10,686,036
- Issue date Jun 16, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd
- Fu-Hsiung Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a multiple layer epitaxial layer on a wafer
- Patent number 10,002,761
- Issue date Jun 19, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Long-Shih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a lateral insulated gate bipolar transistor
- Patent number 9,853,121
- Issue date Dec 26, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd
- Long-Shih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial SOI on power device for breakdown voltage improvement
- Patent number 9,698,024
- Issue date Jul 4, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Long-Shih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structure having split collector region and meth...
- Patent number 9,647,065
- Issue date May 9, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Hsiung Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple layer substrate
- Patent number 9,111,898
- Issue date Aug 18, 2015
- Taiwan Semiconductor Manufacturing Company Ltd.
- Long-Shih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral insulated gate bipolar transistor structure with low parasi...
- Patent number 9,076,837
- Issue date Jul 7, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Long-Shih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partial SOI on power device for breakdown voltage improvement
- Patent number 8,779,555
- Issue date Jul 15, 2014
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Long-Shih Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Hybrid Node Chiplet Stacking Design
- Publication number 20240338507
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jen-Yuan Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Hybrid Node Chiplet Stacking Design
- Publication number 20230041839
- Publication date Feb 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jen-Yuan Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD OF MAKING BIPOLAR TRANSISTOR
- Publication number 20200312957
- Publication date Oct 1, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Hsiung YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING BIPOLAR TRANSISTOR
- Publication number 20170236904
- Publication date Aug 17, 2017
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Hsiung YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple Layer Substrate
- Publication number 20150311070
- Publication date Oct 29, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Long-Shih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A LATERAL INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20150303276
- Publication date Oct 22, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Long-Shih LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR STRUCTURE HAVING SPLIT COLLECTOR REGION AND METH...
- Publication number 20150108542
- Publication date Apr 23, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Fu-Hsiung YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL SOI ON POWER DEVICE FOR BREAKDOWN VOLTAGE IMPROVEMENT
- Publication number 20140322871
- Publication date Oct 30, 2014
- Long-Shih Lin
- G01 - MEASURING TESTING
Information Patent Application
Multiple Layer Substrate
- Publication number 20140231964
- Publication date Aug 21, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Long-Shih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL SOI ON POWER DEVICE FOR BREAKDOWN VOLTAGE IMPROVEMENT
- Publication number 20140159103
- Publication date Jun 12, 2014
- Taiwan Semiconductor Manufacturing Co. Ltd.
- Long-Shih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL INSULATED GATE BIPOLAR TRANSISTOR STRUCTURE WITH LOW PARASI...
- Publication number 20140008723
- Publication date Jan 9, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Long-Shih LIN
- H01 - BASIC ELECTRIC ELEMENTS

Long-Shih LIN

Person

Patents Grantslast 30 patents

Hybrid node chiplet stacking design

Method of making bipolar transistor

Method of making bipolar transistor

Method for forming a multiple layer epitaxial layer on a wafer

Method of fabricating a lateral insulated gate bipolar transistor

Partial SOI on power device for breakdown voltage improvement

Bipolar transistor structure having split collector region and meth...

Multiple layer substrate

Lateral insulated gate bipolar transistor structure with low parasi...

Partial SOI on power device for breakdown voltage improvement

Patents Applicationslast 30 patents

Hybrid Node Chiplet Stacking Design

Hybrid Node Chiplet Stacking Design

METHOD OF MAKING BIPOLAR TRANSISTOR

METHOD OF MAKING BIPOLAR TRANSISTOR

Multiple Layer Substrate

METHOD OF FABRICATING A LATERAL INSULATED GATE BIPOLAR TRANSISTOR

BIPOLAR TRANSISTOR STRUCTURE HAVING SPLIT COLLECTOR REGION AND METH...

PARTIAL SOI ON POWER DEVICE FOR BREAKDOWN VOLTAGE IMPROVEMENT

Multiple Layer Substrate

PARTIAL SOI ON POWER DEVICE FOR BREAKDOWN VOLTAGE IMPROVEMENT

LATERAL INSULATED GATE BIPOLAR TRANSISTOR STRUCTURE WITH LOW PARASI...