Longjuan Tang

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor fabrication method and structure using multiple sacri...
- Patent number 11,894,231
- Issue date Feb 6, 2024
- Semiconductor Manufacturing International (Shanghai) Corporation
- Haiyang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of FinFET contact formation
- Patent number 11,205,596
- Issue date Dec 21, 2021
- Semiconductor Manufacturing International (Beijing) Corporation
- Qiuhua Han
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
- Publication number 20210320007
- Publication date Oct 14, 2021
- Semiconductor Manufacturing International (Shanghai) Corporation
- Haiyang ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FINFET CONTACT FORMATION
- Publication number 20180144990
- Publication date May 24, 2018
- Semiconductor Manufacturing International (Beijing) Corporation
- QIUHUA HAN
- H01 - BASIC ELECTRIC ELEMENTS