Loren T. Lancaster

Person

Colorado Springs, CO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing an oxide-nitride-oxide (ONO) dielectric for...
- Patent number 6,969,689
- Issue date Nov 29, 2005
- Krishnaswamy Ramkumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a dielectric layer for a silicon-oxide-nitr...
- Patent number 6,818,558
- Issue date Nov 16, 2004
- Cypress Semiconductor Corporation
- Manuj Rathor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor non-volatile memory device having an improved write s...
- Patent number 6,750,102
- Issue date Jun 15, 2004
- Cypress Semiconductor Corporation
- Loren T. Lancaster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having silicon-rich layer and method of manufa...
- Patent number 6,709,928
- Issue date Mar 23, 2004
- Cypress Semiconductor Corporation
- Fred Jenne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor non-volatile memory device having a NAND cell structure
- Patent number 6,614,070
- Issue date Sep 2, 2003
- Cypress Semiconductor Corporation
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor non-volatile latch device including non-volatile elem...
- Patent number 6,363,011
- Issue date Mar 26, 2002
- Cypress Semiconductor Corporation
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor non-volatile memory device having a NAND cell structure
- Patent number 6,163,048
- Issue date Dec 19, 2000
- Cypress Semiconductor Corporation
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor non-volatile memory device having an improved write s...
- Patent number 6,140,676
- Issue date Oct 31, 2000
- Cypress Semiconductor Corporation
- Loren T. Lancaster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor reference voltage generator having a non-volatile mem...
- Patent number 6,137,720
- Issue date Oct 24, 2000
- Cypress Semiconductor Corporation
- Loren T. Lancaster
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor non-volatile device including embedded non-volatile e...
- Patent number 6,122,191
- Issue date Sep 19, 2000
- Cypress Semiconductor Corporation
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor non-volatile latch device including embedded non-vola...
- Patent number 5,892,712
- Issue date Apr 6, 1999
- NVX Corporation
- Ryan T. Hirose
- G11 - INFORMATION STORAGE
Information Patent Grant
Single poly memory cell and array
- Patent number 5,789,776
- Issue date Aug 4, 1998
- NVX Corporation
- Loren T. Lancaster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to prevent over erasure of nonvolatile memory...
- Patent number 5,774,400
- Issue date Jun 30, 1998
- NVX Corporation
- Loren T. Lancaster
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit timer function using natural decay of charge sto...
- Patent number 5,760,644
- Issue date Jun 2, 1998
- NVX Corporation
- Loren T. Lancaster
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Flash memory system, and methods of constructing and utilizing same
- Patent number 5,656,837
- Issue date Aug 12, 1997
- NVX Corporation
- Loren T. Lancaster
- G11 - INFORMATION STORAGE
Information Patent Grant
Flash memory system, and methods of constructing and utilizing same
- Patent number 5,644,533
- Issue date Jul 1, 1997
- NVX Corporation
- Loren T. Lancaster
- G11 - INFORMATION STORAGE
Information Patent Grant
Field shield isolated EPROM
- Patent number 5,510,638
- Issue date Apr 23, 1996
- NVX Corporation
- Loren T. Lancaster
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell array having compact word line arrangement
- Patent number 5,506,816
- Issue date Apr 9, 1996
- NVX Corporation
- Ryan T. Hirose
- G11 - INFORMATION STORAGE

Loren T. Lancaster

Person

Patents Grantslast 30 patents

Method of manufacturing an oxide-nitride-oxide (ONO) dielectric for...

Method of manufacturing a dielectric layer for a silicon-oxide-nitr...

Semiconductor non-volatile memory device having an improved write s...

Semiconductor device having silicon-rich layer and method of manufa...

Semiconductor non-volatile memory device having a NAND cell structure

Semiconductor non-volatile latch device including non-volatile elem...

Semiconductor non-volatile memory device having a NAND cell structure

Semiconductor non-volatile memory device having an improved write s...

Semiconductor reference voltage generator having a non-volatile mem...

Semiconductor non-volatile device including embedded non-volatile e...

Semiconductor non-volatile latch device including embedded non-vola...

Single poly memory cell and array

Structure and method to prevent over erasure of nonvolatile memory...

Integrated circuit timer function using natural decay of charge sto...

Flash memory system, and methods of constructing and utilizing same

Flash memory system, and methods of constructing and utilizing same

Field shield isolated EPROM

Memory cell array having compact word line arrangement