Lubomir L. Jastrzebski

Person

Clearwater, FL, US

People

Patents Grantslast 30 patents

Information Patent Grant
Micro photoluminescence imaging
- Patent number 10,883,941
- Issue date Jan 5, 2021
- SEMILAB Semiconductor Physics Laboratory Co., Ltd.
- Zoltan Tamas Kiss
- G01 - MEASURING TESTING
Information Patent Grant
Micro photoluminescence imaging with optical filtering
- Patent number 10,209,190
- Issue date Feb 19, 2019
- SEMILAB Semiconductor Physics Laboratory Co., Ltd.
- Zoltan Tamas Kiss
- G01 - MEASURING TESTING
Information Patent Grant
Micro photoluminescence imaging with optical filtering
- Patent number 10,018,565
- Issue date Jul 10, 2018
- SEMILAB Semiconductor Physics Laboratory Co., Ltd.
- Zoltan Tamas Kiss
- G01 - MEASURING TESTING
Information Patent Grant
Micro photoluminescence imaging
- Patent number 10,012,593
- Issue date Jul 3, 2018
- SEMILAB Semiconductor Physics Laboratory Co., Ltd.
- Zoltan Tamas Kiss
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Determining composition of mixed dielectrics
- Patent number 6,815,974
- Issue date Nov 9, 2004
- Semiconductor Diagnostics, Inc.
- Jacek Lagowski
- G01 - MEASURING TESTING
Information Patent Grant
Steady state method for measuring the thickness and the capacitance...
- Patent number 6,680,621
- Issue date Jan 20, 2004
- Semiconductor Diagnostics, Inc.
- Alexander Savtchouk
- G01 - MEASURING TESTING
Information Patent Grant
Measurement of different mobile ion concentrations in the oxide lay...
- Patent number 6,569,691
- Issue date May 27, 2003
- Semiconductor Diagnostics, Inc.
- Lubomir L. Jastrzebski
- G01 - MEASURING TESTING
Information Patent Grant
Method for forming dielectrically isolated transistor
- Patent number 4,923,826
- Issue date May 8, 1990
- Harris Corporation
- Lubomir L. Jastrzebski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a silicon-on-insulator substrate
- Patent number 4,891,092
- Issue date Jan 2, 1990
- General Electric Company
- Lubomir L. Jastrzebski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High temperature annealing to improve SIMOX characteristics
- Patent number 4,824,698
- Issue date Apr 25, 1989
- General Electric Company
- Lubomir L. Jastrzebski
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Determination of substrate temperature used during oxygen implantat...
- Patent number 4,805,187
- Issue date Feb 14, 1989
- General Electric Company
- Guenther Harbeke
- G01 - MEASURING TESTING
Information Patent Grant
Method of making integrated circuit with pair of MOS field effect t...
- Patent number 4,772,568
- Issue date Sep 20, 1988
- General Electric Company
- Lubomir L. Jastrzebski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical reflectance method of examining a SIMOX article
- Patent number 4,766,317
- Issue date Aug 23, 1988
- General Electric Company
- Guenther Harbeke
- G01 - MEASURING TESTING
Information Patent Grant
Dielectrically isolated PMOS, NMOS, PNP and NPN transistors on a si...
- Patent number 4,751,561
- Issue date Jun 14, 1988
- RCA Corporation
- Lubomir L. Jastrzebski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed oxide method for making a silicon-on-insulator substrate
- Patent number 4,704,186
- Issue date Nov 3, 1987
- RCA Corporation
- Lubomir L. Jastrzebski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of depositing uniformly thick selective epitaxial silicon
- Patent number 4,698,316
- Issue date Oct 6, 1987
- RCA Corporation
- John F. Corboy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming dielectrically isolated PMOS, NMOS, PNP and NPN...
- Patent number 4,685,199
- Issue date Aug 11, 1987
- RCA Corporation
- Lubomir L. Jastrzebski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Arrangement of semiconductor devices on a wafer
- Patent number 4,654,681
- Issue date Mar 31, 1987
- RCA Corporation
- Lubomir L. Jastrzebski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to determine the crystalline properties of an interface of t...
- Patent number 4,642,565
- Issue date Feb 10, 1987
- RCA Corporation
- Lubomir L. Jastrzebski
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Fabricating of a CMOS FET with reduced latchup susceptibility
- Patent number 4,619,033
- Issue date Oct 28, 1986
- RCA Corporation
- Lubomir L. Jastrzebski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for thinning silicon
- Patent number 4,615,762
- Issue date Oct 7, 1986
- RCA Corporation
- Lubomir L. Jastrzebski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming uniformly thick selective epitaxial silicon
- Patent number 4,592,792
- Issue date Jun 3, 1986
- RCA Corporation
- John F. Corboy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical IGFET with internal gate and method for making same
- Patent number 4,586,240
- Issue date May 6, 1986
- RCA Corporation
- Scott C. Blackstone
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing monocrystalline silicon through mask layer
- Patent number 4,578,142
- Issue date Mar 25, 1986
- RCA Corporation
- John F. Corboy
- C30 - CRYSTAL GROWTH
Information Patent Grant
CMOS Structure incorporating vertical IGFETS
- Patent number 4,566,025
- Issue date Jan 21, 1986
- RCA Corporation
- Lubomir L. Jastrzebski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a void-free monocrystalline epitaxial layer on a...
- Patent number 4,557,794
- Issue date Dec 10, 1985
- RCA Corporation
- Joseph T. McGinn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vertically integrated IGFET device
- Patent number 4,554,570
- Issue date Nov 19, 1985
- RCA Corporation
- Lubomir L. Jastrzebski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing monocrystalline silicon on a mask layer
- Patent number 4,549,926
- Issue date Oct 29, 1985
- RCA Corporation
- John F. Corboy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical IGFET with internal gate and method for making same
- Patent number 4,546,375
- Issue date Oct 8, 1985
- RCA Corporation
- Scott C. Blackstone
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a self-aligned vertical IGFET
- Patent number 4,530,149
- Issue date Jul 23, 1985
- RCA Corporation
- Lubomir L. Jastrzebski
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MICRO PHOTOLUMINESCENCE IMAGING
- Publication number 20200300767
- Publication date Sep 24, 2020
- SEMILAB Semiconductor Physics Laboratory Co., Ltd.
- Zoltan Tamas Kiss
- G01 - MEASURING TESTING
Information Patent Application
Micro Photoluminescence Imaging
- Publication number 20190391079
- Publication date Dec 26, 2019
- SEMILAB Semiconductor Physics Laboratory Co., Ltd.
- Zoltan Tamas Kiss
- G01 - MEASURING TESTING
Information Patent Application
MICRO PHOTOLUMINESCENCE IMAGING WITH OPTICAL FILTERING
- Publication number 20180313761
- Publication date Nov 1, 2018
- Zoltan Tamas Kiss
- G01 - MEASURING TESTING
Information Patent Application
MICRO PHOTOLUMINESCENCE IMAGING WITH OPTICAL FILTERING
- Publication number 20160327485
- Publication date Nov 10, 2016
- Semilab SDI LLC
- Zoltan Tamas Kiss
- G01 - MEASURING TESTING
Information Patent Application
Micro Photoluminescence Imaging
- Publication number 20160328840
- Publication date Nov 10, 2016
- Semilab SDI LLC
- Zoltan Tamas Kiss
- G01 - MEASURING TESTING
Information Patent Application
ENHANCED SENSITIVITY NON-CONTACT ELECTRICAL MONITORING OF COPPER CO...
- Publication number 20090047748
- Publication date Feb 19, 2009
- Alexandre Savtchouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Steady state method for measuring the thickness and the capacitance...
- Publication number 20020125900
- Publication date Sep 12, 2002
- Alexander Savtchouk
- G01 - MEASURING TESTING

Lubomir L. Jastrzebski

Person

Patents Grantslast 30 patents

Micro photoluminescence imaging

Micro photoluminescence imaging with optical filtering

Micro photoluminescence imaging with optical filtering

Micro photoluminescence imaging

Determining composition of mixed dielectrics

Steady state method for measuring the thickness and the capacitance...

Measurement of different mobile ion concentrations in the oxide lay...

Method for forming dielectrically isolated transistor

Method for making a silicon-on-insulator substrate

High temperature annealing to improve SIMOX characteristics

Determination of substrate temperature used during oxygen implantat...

Method of making integrated circuit with pair of MOS field effect t...

Optical reflectance method of examining a SIMOX article

Dielectrically isolated PMOS, NMOS, PNP and NPN transistors on a si...

Recessed oxide method for making a silicon-on-insulator substrate

Method of depositing uniformly thick selective epitaxial silicon

Method for forming dielectrically isolated PMOS, NMOS, PNP and NPN...

Arrangement of semiconductor devices on a wafer

Method to determine the crystalline properties of an interface of t...

Fabricating of a CMOS FET with reduced latchup susceptibility

Method for thinning silicon

Method for forming uniformly thick selective epitaxial silicon

Vertical IGFET with internal gate and method for making same

Method for growing monocrystalline silicon through mask layer

CMOS Structure incorporating vertical IGFETS

Method for forming a void-free monocrystalline epitaxial layer on a...

Vertically integrated IGFET device

Method for growing monocrystalline silicon on a mask layer

Vertical IGFET with internal gate and method for making same

Method for fabricating a self-aligned vertical IGFET

Patents Applicationslast 30 patents

MICRO PHOTOLUMINESCENCE IMAGING

Micro Photoluminescence Imaging

MICRO PHOTOLUMINESCENCE IMAGING WITH OPTICAL FILTERING

MICRO PHOTOLUMINESCENCE IMAGING WITH OPTICAL FILTERING

Micro Photoluminescence Imaging

ENHANCED SENSITIVITY NON-CONTACT ELECTRICAL MONITORING OF COPPER CO...

Steady state method for measuring the thickness and the capacitance...