Luis Isidro Fernandez

Person

Somerville, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Pattern enhancement using a gas cluster ion beam
- Patent number 11,694,872
- Issue date Jul 4, 2023
- TEL MANUFACTURING AND ENGINEERING OF AMERICA, INC.
- Kazuya Dobashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pattern enhancement using a gas cluster ion beam
- Patent number 11,450,506
- Issue date Sep 20, 2022
- TEL MANUFACTURING AND ENGINEERING OF AMERICA, INC.
- Kazuya Dobashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for high throughput using beam scan size and beam position i...
- Patent number 10,256,095
- Issue date Apr 9, 2019
- TEL Epion Inc.
- Soo Doo Chae
- G05 - CONTROLLING REGULATING
Information Patent Grant
GCIB etching method for adjusting fin height of finFET devices
- Patent number 9,209,033
- Issue date Dec 8, 2015
- TEL Epion Inc.
- Luis Fernandez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas cluster ion beam process for opening conformal layer in a high...
- Patent number 8,728,947
- Issue date May 20, 2014
- TEL Epion Inc.
- Christopher K. Olsen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for dry etching a hafnium containing material
- Patent number 8,183,161
- Issue date May 22, 2012
- Tokyo Electron Limited
- Luis Isidro Fernandez
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
OPTICAL ELEMENTS PATTERNING
- Publication number 20240353751
- Publication date Oct 24, 2024
- TEL Manufacturing and Engineering of America, Inc.
- Angelique Raley
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Pattern Enhancement Using a Gas Cluster Ion Beam
- Publication number 20220277924
- Publication date Sep 1, 2022
- TEL Manufacturing and Engineering of America, Inc.
- Kazuya Dobashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SUBSTRATE PROCESSING METHOD FOR FORMING INNER SPACERS IN A NANO-SHE...
- Publication number 20210376123
- Publication date Dec 2, 2021
- TOKYO ELECTRON LIMITED
- Shimpei YAMAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pattern Enhancement Using a Gas Cluster Ion Beam
- Publication number 20210335568
- Publication date Oct 28, 2021
- TOKYO ELECTRON LIMITED
- Kazuya Dobashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF SMOOTHING AND PLANARIZING OF ALTIC SURFACES
- Publication number 20200273715
- Publication date Aug 27, 2020
- TEL Manufacturing and Engineering of America, Inc.
- Luis Fernandez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR HIGH THROUGHPUT USING BEAM SCAN SIZE AND BEAM POSITION I...
- Publication number 20170077001
- Publication date Mar 16, 2017
- TEL Epion Inc.
- Soo Doo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS CLUSTER ION BEAM ETCHING PROCESS
- Publication number 20150270135
- Publication date Sep 24, 2015
- TEL Epion Inc.
- Martin D. Tabat
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GCIB ETCHING METHOD FOR ADJUSTING FIN HEIGHT OF FINFET DEVICES
- Publication number 20150056815
- Publication date Feb 26, 2015
- TEL Epion Inc.
- Luis FERNANDEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gas Cluster Ion Beam Process for Opening Conformal Layer in a High...
- Publication number 20130330924
- Publication date Dec 12, 2013
- TEL EPION, INC.
- Christopher OLSEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS CLUSTER ION BEAM PROCESS FOR OPENING CONFORMAL LAYER IN A HIGH...
- Publication number 20130330845
- Publication date Dec 12, 2013
- TEL Epion Inc.
- Christopher K. Olsen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING TRENCH ISOLATION USING GAS CLUSTER ION BEAM PROC...
- Publication number 20100193898
- Publication date Aug 5, 2010
- TEL Epion Inc.
- John J. Hautala
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method and system for dry etching a hafnium containing material
- Publication number 20080064220
- Publication date Mar 13, 2008
- TOKYO ELECTRON LIMITED
- Luis Isidro Fernandez
- H01 - BASIC ELECTRIC ELEMENTS

Luis Isidro Fernandez

Person

Patents Grantslast 30 patents

Pattern enhancement using a gas cluster ion beam

Pattern enhancement using a gas cluster ion beam

Method for high throughput using beam scan size and beam position i...

GCIB etching method for adjusting fin height of finFET devices

Gas cluster ion beam process for opening conformal layer in a high...

Method and system for dry etching a hafnium containing material

Patents Applicationslast 30 patents

OPTICAL ELEMENTS PATTERNING

Pattern Enhancement Using a Gas Cluster Ion Beam

SUBSTRATE PROCESSING METHOD FOR FORMING INNER SPACERS IN A NANO-SHE...

Pattern Enhancement Using a Gas Cluster Ion Beam

METHOD OF SMOOTHING AND PLANARIZING OF ALTIC SURFACES

METHOD FOR HIGH THROUGHPUT USING BEAM SCAN SIZE AND BEAM POSITION I...

GAS CLUSTER ION BEAM ETCHING PROCESS

GCIB ETCHING METHOD FOR ADJUSTING FIN HEIGHT OF FINFET DEVICES

Gas Cluster Ion Beam Process for Opening Conformal Layer in a High...

GAS CLUSTER ION BEAM PROCESS FOR OPENING CONFORMAL LAYER IN A HIGH...

METHOD FOR FORMING TRENCH ISOLATION USING GAS CLUSTER ION BEAM PROC...

Method and system for dry etching a hafnium containing material