Luqiao Liu

Person

Yorktown Heights, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Spin torque oscillator maser
- Patent number 12,126,303
- Issue date Oct 22, 2024
- Massachusetts Institute of Technology
- Luqiao Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin hall write select for magneto-resistive random access memory
- Patent number 11,164,615
- Issue date Nov 2, 2021
- International Business Machines Corporation
- Luqiao Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin hall write select for magneto-resistive random access memory
- Patent number 9,947,383
- Issue date Apr 17, 2018
- International Business Machines Corporation
- Luqiao Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
High temperature endurable MTJ stack
- Patent number 9,799,823
- Issue date Oct 24, 2017
- International Business Machines Corporation
- Guohan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multil...
- Patent number 9,715,917
- Issue date Jul 25, 2017
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multil...
- Patent number 9,647,204
- Issue date May 9, 2017
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Grant
Utilization of the anomalous hall effect or polarized spin hall eff...
- Patent number 9,269,415
- Issue date Feb 23, 2016
- International Business Machines Corporation
- Luqiao Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin hall effect assisted spin transfer torque magnetic random acce...
- Patent number 8,896,041
- Issue date Nov 25, 2014
- International Business Machines Corporation
- John K. De Brosse
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin hall effect assisted spin transfer torque magnetic random acce...
- Patent number 8,889,433
- Issue date Nov 18, 2014
- International Business Machines Corporation
- John K. De Brosse
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Spin Torque Oscillator Maser
- Publication number 20230387855
- Publication date Nov 30, 2023
- Massachusetts Institute of Technology
- Luqiao LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN HALL WRITE SELECT FOR MAGNETO-RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20180240508
- Publication date Aug 23, 2018
- International Business Machines Corporation
- LUQIAO LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH TEMPERATURE ENDURABLE MTJ STACK
- Publication number 20170294570
- Publication date Oct 12, 2017
- International Business Machines Corporation
- GUOHAN HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TORQUE MRAM BASED ON CO, IR SYNTHETIC ANTIFERROMAGNETIC MULTIL...
- Publication number 20170110655
- Publication date Apr 20, 2017
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
Spin Torque MRAM Based on Co, Ir Synthetic Antiferromagnetic Multil...
- Publication number 20160163966
- Publication date Jun 9, 2016
- International Business Machines Corporation
- Guohan Hu
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN HALL EFFECT ASSISTED SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCE...
- Publication number 20140264511
- Publication date Sep 18, 2014
- International Business Machines Corporation
- John K. De Brosse
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN HALL EFFECT ASSISTED SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCE...
- Publication number 20140264513
- Publication date Sep 18, 2014
- International Business Machines Corporation
- John K. De Brosse
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Spin torque oscillator maser

Spin hall write select for magneto-resistive random access memory

Spin hall write select for magneto-resistive random access memory

High temperature endurable MTJ stack

Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multil...

Spin torque MRAM based on Co, Ir synthetic antiferromagnetic multil...

Utilization of the anomalous hall effect or polarized spin hall eff...

Spin hall effect assisted spin transfer torque magnetic random acce...

Spin hall effect assisted spin transfer torque magnetic random acce...

Patents Applicationslast 30 patents

Spin Torque Oscillator Maser

SPIN HALL WRITE SELECT FOR MAGNETO-RESISTIVE RANDOM ACCESS MEMORY

HIGH TEMPERATURE ENDURABLE MTJ STACK

SPIN TORQUE MRAM BASED ON CO, IR SYNTHETIC ANTIFERROMAGNETIC MULTIL...

Spin Torque MRAM Based on Co, Ir Synthetic Antiferromagnetic Multil...

SPIN HALL EFFECT ASSISTED SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCE...

SPIN HALL EFFECT ASSISTED SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCE...