M. Asif Khan

Person

Irmo, SC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Ultraviolet light emitting devices and methods of fabrication
- Patent number 9,985,177
- Issue date May 29, 2018
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication technique for high frequency, high power group III nitr...
- Patent number 9,882,039
- Issue date Jan 30, 2018
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Utlraviolet light emitting devices and methods of fabrication
- Patent number 9,331,240
- Issue date May 3, 2016
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to increase breakdown voltage of semiconductor devices
- Patent number 8,692,293
- Issue date Apr 8, 2014
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication technique for high frequency, high power group III nitr...
- Patent number 8,476,125
- Issue date Jul 2, 2013
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pulsed selective area lateral epitaxy for growth of III-nitride mat...
- Patent number 8,338,273
- Issue date Dec 25, 2012
- University of South Carolina
- M. Asif Khan
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method to increase breakdown voltage of semiconductor devices
- Patent number 8,318,562
- Issue date Nov 27, 2012
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ULTRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATION
- Publication number 20160276533
- Publication date Sep 22, 2016
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Fabrication Technique for High Frequency, High Power Group II...
- Publication number 20140015011
- Publication date Jan 16, 2014
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Method to Increase Breakdown Voltage of Semiconductor Devices
- Publication number 20130056796
- Publication date Mar 7, 2013
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PULSED SELECTIVE AREA LATERAL EPITAXY FOR GROWTH OF III-NITRIDE MAT...
- Publication number 20100140745
- Publication date Jun 10, 2010
- M. Asif Khan
- C30 - CRYSTAL GROWTH
Information Patent Application
NOVEL FABRICATION TECHNIQUE FOR HIGH FREQUENCY, HIGH POWER GROUP II...
- Publication number 20100102359
- Publication date Apr 29, 2010
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UTLRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATION
- Publication number 20100032647
- Publication date Feb 11, 2010
- University of South Carolina
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel Method to Increase Breakdown Voltage of Semiconductor Devices
- Publication number 20090090984
- Publication date Apr 9, 2009
- M. Asif Khan
- H01 - BASIC ELECTRIC ELEMENTS

M. Asif Khan

Person

Patents Grantslast 30 patents

Ultraviolet light emitting devices and methods of fabrication

Fabrication technique for high frequency, high power group III nitr...

Utlraviolet light emitting devices and methods of fabrication

Method to increase breakdown voltage of semiconductor devices

Fabrication technique for high frequency, high power group III nitr...

Pulsed selective area lateral epitaxy for growth of III-nitride mat...

Method to increase breakdown voltage of semiconductor devices

Patents Applicationslast 30 patents

ULTRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATION

Novel Fabrication Technique for High Frequency, High Power Group II...

Novel Method to Increase Breakdown Voltage of Semiconductor Devices

PULSED SELECTIVE AREA LATERAL EPITAXY FOR GROWTH OF III-NITRIDE MAT...

NOVEL FABRICATION TECHNIQUE FOR HIGH FREQUENCY, HIGH POWER GROUP II...

UTLRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATION

Novel Method to Increase Breakdown Voltage of Semiconductor Devices