M. Reaz Shaheed

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Portland, OR, US

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Patents Grantslast 30 patents

Information Patent Grant
Methods of manufacturing a stressed MOS transistor structure
- Patent number 7,338,847
- Issue date Mar 4, 2008
- Intel Corporation
- M. Reaz Shaheed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium heterojunction bipolar transistor with step-up ca...
- Patent number 6,972,441
- Issue date Dec 6, 2005
- Intel Corporation
- M. Reaz Shaheed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increasing stress-enhanced drive current in a MOS transistor
- Patent number 6,870,179
- Issue date Mar 22, 2005
- Intel Corporation
- M. Reaz Shaheed
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Methods of manufacturing a stressed MOS transistor structure
- Publication number 20050104057
- Publication date May 19, 2005
- M. Reaz Shaheed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Increasing stress-enhanced drive current in a MOS transistor
- Publication number 20040188670
- Publication date Sep 30, 2004
- M. Reaz Shaheed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon germanium heterojunction bipolar transistor with step-up ca...
- Publication number 20040099880
- Publication date May 27, 2004
- M. Reaz Shaheed
- H01 - BASIC ELECTRIC ELEMENTS