Maciej Wiatr

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure including a transistor having stress creati...
- Patent number 9,812,573
- Issue date Nov 7, 2017
- GLOBALFOUNDRIES Inc.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with thin-film resistor
- Patent number 9,627,409
- Issue date Apr 18, 2017
- GLOBALFOUNDRIES Inc.
- Hans-Peter Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
E-fuse design for high-K metal-gate technology
- Patent number 9,515,155
- Issue date Dec 6, 2016
- GLOBALFOUNDRIES Inc.
- Roman Boschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain engineering in semiconductor devices by using a piezoelectri...
- Patent number 9,263,582
- Issue date Feb 16, 2016
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fuse with enhanced post-programming resistance
- Patent number 9,153,534
- Issue date Oct 6, 2015
- GLOBALFOUNDRIES Inc.
- Andreas Kurz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of defect rates in PFET transistors comprising a Si/Ge se...
- Patent number 8,939,765
- Issue date Jan 27, 2015
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain engineering in semiconductor devices by using a piezoelectri...
- Patent number 8,884,379
- Issue date Nov 11, 2014
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing defect rate during deposition of a channel semiconductor a...
- Patent number 8,836,047
- Issue date Sep 16, 2014
- GLOBALFOUNDRIES Inc.
- Stephan-Detlef Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming transistor with increased gate width
- Patent number 8,778,772
- Issue date Jul 15, 2014
- GLOBALFOUNDRIES Inc.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices comprising a channel semiconductor alloy form...
- Patent number 8,748,275
- Issue date Jun 10, 2014
- GLOBALFOUNDRIES Inc.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing deposition uniformity of a channel semiconductor alloy by...
- Patent number 8,722,486
- Issue date May 13, 2014
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superior integrity of high-k metal gate stacks by preserving a resi...
- Patent number 8,722,481
- Issue date May 13, 2014
- GLOBALFOUNDRIES Inc.
- Stephan-Detlef Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sacrificial spacer approach for differential source/drain implantat...
- Patent number 8,709,902
- Issue date Apr 29, 2014
- GLOBALFOUNDRIES Inc.
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Test structure for controlling the incorporation of semiconductor a...
- Patent number 8,673,668
- Issue date Mar 18, 2014
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element formed in a crystalline substrate material an...
- Patent number 8,664,049
- Issue date Mar 4, 2014
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming silicon/germanium containing drain/source region...
- Patent number 8,652,913
- Issue date Feb 18, 2014
- GLOBALFOUNDRIES Inc.
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric transistor devices formed by asymmetric spacers and tilt...
- Patent number 8,574,991
- Issue date Nov 5, 2013
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Differential threshold voltage adjustment in PMOS transistors by di...
- Patent number 8,536,009
- Issue date Sep 17, 2013
- GLOBALFOUNDRIES Inc.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fuse with enhanced post-programming resistance
- Patent number 8,524,567
- Issue date Sep 3, 2013
- GLOBALFOUNDRIES Inc.
- Andreas Kurz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superior integrity of high-k metal gate stacks by preserving a resi...
- Patent number 8,481,381
- Issue date Jul 9, 2013
- GLOBALFOUNDRIES Inc.
- Stephan-Detlef Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage control in field effect transistors based on an implantatio...
- Patent number 8,481,404
- Issue date Jul 9, 2013
- GLOBALFOUNDRIES Inc.
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor comprising an embedded semiconductor alloy in drain and...
- Patent number 8,460,980
- Issue date Jun 11, 2013
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compensation of operating time-related degradation of operating spe...
- Patent number 8,456,224
- Issue date Jun 4, 2013
- Advanced Micro Devices, Inc.
- Maciej Wiatr
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method for forming a transistor comprising high-k metal gate electr...
- Patent number 8,343,826
- Issue date Jan 1, 2013
- GLOBALFOUNDRIES Inc.
- Stephan-Detlef Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain enhancement in transistors comprising an embedded strain-ind...
- Patent number 8,338,892
- Issue date Dec 25, 2012
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried etch stop layer in trench isolation structures for superior...
- Patent number 8,334,573
- Issue date Dec 18, 2012
- GLOBALFOUNDRIES Inc.
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for differential spacer removal by wet chemical etch process...
- Patent number 8,298,924
- Issue date Oct 30, 2012
- Advanced Micro Devices, Inc.
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cold temperature control in a semiconductor device
- Patent number 8,212,184
- Issue date Jul 3, 2012
- GLOBALFOUNDRIES, INC.
- Anthony Mowry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric transistor devices formed by asymmetric spacers and tilt...
- Patent number 8,158,482
- Issue date Apr 17, 2012
- GLOBALFOUNDRIES Inc.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing silicide resistance in silicon/germanium-containing drain/...
- Patent number 8,124,467
- Issue date Feb 28, 2012
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING A TRANSISTOR HAVING STRESS CREATI...
- Publication number 20170330970
- Publication date Nov 16, 2017
- GLOBALFOUNDRIES INC.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with thin-film resistor
- Publication number 20160300856
- Publication date Oct 13, 2016
- GLOBALFOUNDRIES INC.
- Hans-Peter Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD INCLUDING A REPLACEMENT OF A DUMMY GATE STRUCTURE WITH A GAT...
- Publication number 20160071947
- Publication date Mar 10, 2016
- GLOBALFOUNDRIES INC.
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS FOR HIGH-PERFORMANCE AND LOW-POWER APPLICA...
- Publication number 20150200270
- Publication date Jul 16, 2015
- GLOBALFOUNDRIES INC.
- Stefan Flachowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL E-FUSE DESIGN FOR HIGH-K METAL-GATE TECHNOLOGY
- Publication number 20150179753
- Publication date Jun 25, 2015
- GLOBALFOUNDRIES Inc.
- Roman Boschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN ENGINEERING IN SEMICONDUCTOR DEVICES BY USING A PIEZOELECTRI...
- Publication number 20150054083
- Publication date Feb 26, 2015
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FUSE WITH ENHANCED POST-PROGRAMMING RESISTANCE
- Publication number 20150034953
- Publication date Feb 5, 2015
- GLOBAL FOUNDRIES Inc.
- Andreas Kurz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FUSE WITH ENHANCED POST-PROGRAMMING RESISTANCE
- Publication number 20130313553
- Publication date Nov 28, 2013
- GLOBALFOUNDRIES INC.
- Andreas KURZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERIOR INTEGRITY OF HIGH-K METAL GATE STACKS BY PRESERVING A RESI...
- Publication number 20130267044
- Publication date Oct 10, 2013
- GLOBALFOUNDRIES INC.
- Stephan-Detlef KRONHOLZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NFET Device with Tensile Stressed Channel Region and Methods of For...
- Publication number 20130175577
- Publication date Jul 11, 2013
- GLOBALFOUNDRIES INC.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Faceted Stress-Inducing Stressors Proximate the...
- Publication number 20130175585
- Publication date Jul 11, 2013
- GLOBALFOUNDRIES INC.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Transistor with Increased Gate Width
- Publication number 20130178045
- Publication date Jul 11, 2013
- GLOBALFOUNDRIES INC.
- Chung Foong Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FUSE WITH ENHANCED POST-PROGRAMMING RESISTANCE
- Publication number 20130062726
- Publication date Mar 14, 2013
- GLOBAL FOUNDRIES Inc.
- Andreas Kurz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superior Integrity of High-K Metal Gate Stacks by Preserving a Resi...
- Publication number 20130065329
- Publication date Mar 14, 2013
- GLOBALFOUNDRIES INC.
- Stephan-Detlef KRONHOLZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING DEFECT RATE DURING DEPOSITION OF A CHANNEL SEMICONDUCTOR A...
- Publication number 20120235249
- Publication date Sep 20, 2012
- GLOBALFOUNDRIES INC.
- Stephan-Detlef KRONHOLZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC TRANSISTOR DEVICES FORMED BY ASYMMETRIC SPACERS AND TILT...
- Publication number 20120171830
- Publication date Jul 5, 2012
- GLOBALFOUNDRIES INC.
- Jan Hoentschel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Comprising High-K Metal Gate Electrode Structures Includ...
- Publication number 20120161250
- Publication date Jun 28, 2012
- GLOBALFOUNDRIES INC.
- Stephan-Detlef KRONHOLZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Differential Threshold Voltage Adjustment in PMOS Transistors by Di...
- Publication number 20120153401
- Publication date Jun 21, 2012
- GLOBALFOUNDRIES INC.
- Peter JAVORKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices Comprising a Channel Semiconductor Alloy Form...
- Publication number 20120156846
- Publication date Jun 21, 2012
- GLOBALFOUNDRIES INC.
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE ENHANCEMENT IN TRANSISTORS COMPRISING HIGH-K METAL GATE...
- Publication number 20120153354
- Publication date Jun 21, 2012
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sacrificial Spacer Approach for Differential Source/Drain Implantat...
- Publication number 20120156837
- Publication date Jun 21, 2012
- GLOBALFOUNDRIES INC.
- Thilo Scheiper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor with Embedded Strain-Inducing Material and Dummy Gate El...
- Publication number 20120025315
- Publication date Feb 2, 2012
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Test Structure for Controlling the Incorporation of Semiconductor A...
- Publication number 20120001174
- Publication date Jan 5, 2012
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduction of Defect Rates in PFET Transistors Comprising a Si/Ge Se...
- Publication number 20110291163
- Publication date Dec 1, 2011
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN ENHANCEMENT IN TRANSISTORS COMPRISING AN EMBEDDED STRAIN-IND...
- Publication number 20110101469
- Publication date May 5, 2011
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED ETCH STOP LAYER IN TRENCH ISOLATION STRUCTURES FOR SUPERIOR...
- Publication number 20110049637
- Publication date Mar 3, 2011
- Maciej Wiatr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE CONTROL IN FIELD EFFECT TRANSISTORS BASED ON AN IMPLANTATIO...
- Publication number 20110024846
- Publication date Feb 3, 2011
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT FORMED IN A CRYSTALLINE SUBSTRATE MATERIAL AN...
- Publication number 20100327358
- Publication date Dec 30, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING SILICIDE RESISTANCE IN SILICON/GERMANIUM-CONTAINING DRAIN/...
- Publication number 20100244107
- Publication date Sep 30, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR COMPRISING AN EMBEDDED SEMICONDUCTOR ALLOY IN DRAIN AND...
- Publication number 20100219474
- Publication date Sep 2, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS

Maciej Wiatr

Person

Patents Grantslast 30 patents

Semiconductor structure including a transistor having stress creati...

Semiconductor device with thin-film resistor

E-fuse design for high-K metal-gate technology

Strain engineering in semiconductor devices by using a piezoelectri...

Semiconductor fuse with enhanced post-programming resistance

Reduction of defect rates in PFET transistors comprising a Si/Ge se...

Strain engineering in semiconductor devices by using a piezoelectri...

Reducing defect rate during deposition of a channel semiconductor a...

Method of forming transistor with increased gate width

Semiconductor devices comprising a channel semiconductor alloy form...

Enhancing deposition uniformity of a channel semiconductor alloy by...

Superior integrity of high-k metal gate stacks by preserving a resi...

Sacrificial spacer approach for differential source/drain implantat...

Test structure for controlling the incorporation of semiconductor a...

Semiconductor element formed in a crystalline substrate material an...

Method for forming silicon/germanium containing drain/source region...

Asymmetric transistor devices formed by asymmetric spacers and tilt...

Differential threshold voltage adjustment in PMOS transistors by di...

Semiconductor fuse with enhanced post-programming resistance

Superior integrity of high-k metal gate stacks by preserving a resi...

Leakage control in field effect transistors based on an implantatio...

Transistor comprising an embedded semiconductor alloy in drain and...

Compensation of operating time-related degradation of operating spe...

Method for forming a transistor comprising high-k metal gate electr...

Strain enhancement in transistors comprising an embedded strain-ind...

Buried etch stop layer in trench isolation structures for superior...

Method for differential spacer removal by wet chemical etch process...

Cold temperature control in a semiconductor device

Asymmetric transistor devices formed by asymmetric spacers and tilt...

Reducing silicide resistance in silicon/germanium-containing drain/...

Patents Applicationslast 30 patents

SEMICONDUCTOR STRUCTURE INCLUDING A TRANSISTOR HAVING STRESS CREATI...

Semiconductor device with thin-film resistor

METHOD INCLUDING A REPLACEMENT OF A DUMMY GATE STRUCTURE WITH A GAT...

FIELD EFFECT TRANSISTORS FOR HIGH-PERFORMANCE AND LOW-POWER APPLICA...

NOVEL E-FUSE DESIGN FOR HIGH-K METAL-GATE TECHNOLOGY

STRAIN ENGINEERING IN SEMICONDUCTOR DEVICES BY USING A PIEZOELECTRI...

SEMICONDUCTOR FUSE WITH ENHANCED POST-PROGRAMMING RESISTANCE

SEMICONDUCTOR FUSE WITH ENHANCED POST-PROGRAMMING RESISTANCE

SUPERIOR INTEGRITY OF HIGH-K METAL GATE STACKS BY PRESERVING A RESI...

NFET Device with Tensile Stressed Channel Region and Methods of For...

Methods of Forming Faceted Stress-Inducing Stressors Proximate the...

Method of Forming Transistor with Increased Gate Width

SEMICONDUCTOR FUSE WITH ENHANCED POST-PROGRAMMING RESISTANCE

Superior Integrity of High-K Metal Gate Stacks by Preserving a Resi...

REDUCING DEFECT RATE DURING DEPOSITION OF A CHANNEL SEMICONDUCTOR A...

ASYMMETRIC TRANSISTOR DEVICES FORMED BY ASYMMETRIC SPACERS AND TILT...

Transistor Comprising High-K Metal Gate Electrode Structures Includ...

Differential Threshold Voltage Adjustment in PMOS Transistors by Di...

Semiconductor Devices Comprising a Channel Semiconductor Alloy Form...

PERFORMANCE ENHANCEMENT IN TRANSISTORS COMPRISING HIGH-K METAL GATE...

Sacrificial Spacer Approach for Differential Source/Drain Implantat...

Transistor with Embedded Strain-Inducing Material and Dummy Gate El...

Test Structure for Controlling the Incorporation of Semiconductor A...

Reduction of Defect Rates in PFET Transistors Comprising a Si/Ge Se...

STRAIN ENHANCEMENT IN TRANSISTORS COMPRISING AN EMBEDDED STRAIN-IND...

BURIED ETCH STOP LAYER IN TRENCH ISOLATION STRUCTURES FOR SUPERIOR...

LEAKAGE CONTROL IN FIELD EFFECT TRANSISTORS BASED ON AN IMPLANTATIO...

SEMICONDUCTOR ELEMENT FORMED IN A CRYSTALLINE SUBSTRATE MATERIAL AN...

REDUCING SILICIDE RESISTANCE IN SILICON/GERMANIUM-CONTAINING DRAIN/...

TRANSISTOR COMPRISING AN EMBEDDED SEMICONDUCTOR ALLOY IN DRAIN AND...