Madhan Raj

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method and system for in-situ etch and regrowth in gallium nitride...
- Patent number 10,319,829
- Issue date Jun 11, 2019
- NEXGEN POWER SYSTEMS, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based Schottky barrier diode with algan surface layer
- Patent number 9,450,112
- Issue date Sep 20, 2016
- Avogy, Inc.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gallium nitride merged P-I-N schottky (MPS)...
- Patent number 9,397,186
- Issue date Jul 19, 2016
- Avogy, Inc.
- Madhan M. Raj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for in-situ etch and regrowth in gallium nitride...
- Patent number 9,123,533
- Issue date Sep 1, 2015
- Avogy, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a gallium nitride vertical JFET with self-ali...
- Patent number 9,117,850
- Issue date Aug 25, 2015
- Avogy, Inc.
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a gallium nitride merged P-i-N Schottky (MPS)...
- Patent number 8,969,994
- Issue date Mar 3, 2015
- Avogy, Inc.
- Madhan M. Raj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride-based schottky barrier diode with aluminum gallium...
- Patent number 8,836,071
- Issue date Sep 16, 2014
- Avogy, Inc.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for a GaN vertical JFET with self-aligned source...
- Patent number 8,829,574
- Issue date Sep 9, 2014
- Avogy, Inc.
- Donald R. Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based Schottky barrier diode with field plate
- Patent number 8,643,134
- Issue date Feb 4, 2014
- Avogy, Inc.
- Madhan Raj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based Schottky barrier diode with field plate
- Patent number 8,592,938
- Issue date Nov 26, 2013
- Avogy, Inc.
- Madhan Raj
Information Patent Grant
Vertical GaN-based metal insulator semiconductor FET
- Patent number 8,558,242
- Issue date Oct 15, 2013
- Avogy, Inc.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...
- Publication number 20180190789
- Publication date Jul 5, 2018
- Nexgen Power Systems, Inc.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...
- Publication number 20160190276
- Publication date Jun 30, 2016
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A...
- Publication number 20160190296
- Publication date Jun 30, 2016
- AVOGY, INC.
- Linda Romano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...
- Publication number 20150340514
- Publication date Nov 26, 2015
- AVOGY, INC.
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS)...
- Publication number 20150200268
- Publication date Jul 16, 2015
- AVOGY, INC.
- Madhan M. Raj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER
- Publication number 20140374769
- Publication date Dec 25, 2014
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...
- Publication number 20140370669
- Publication date Dec 18, 2014
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS)...
- Publication number 20140048902
- Publication date Feb 20, 2014
- AVOGY , INC.
- Madhan M. Raj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE
- Publication number 20140051236
- Publication date Feb 20, 2014
- AVOGY, INC.
- Madhan Raj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR IN-SITU AND REGROWTH IN GALLIUM NITRIDE BASED...
- Publication number 20140045306
- Publication date Feb 13, 2014
- AVOGY, INC.
- David P. Bour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR A GAN VERTICAL JFET WITH SELF-ALIGNED SOURCE...
- Publication number 20130161705
- Publication date Jun 27, 2013
- EPOWERSOFT, INC.
- Don Disney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical GaN-Based Metal Insulator Semiconductor FET
- Publication number 20130146885
- Publication date Jun 13, 2013
- EPOWERSOFT, INC.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE
- Publication number 20130127006
- Publication date May 23, 2013
- EPOWERSOFT, INC.
- Madhan Raj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER
- Publication number 20130126886
- Publication date May 23, 2013
- EPOWERSOFT, INC.
- Richard J. Brown
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method and system for in-situ etch and regrowth in gallium nitride...

GaN-based Schottky barrier diode with algan surface layer

Method of fabricating a gallium nitride merged P-I-N schottky (MPS)...

Method and system for in-situ etch and regrowth in gallium nitride...

Method and system for a gallium nitride vertical JFET with self-ali...

Method of fabricating a gallium nitride merged P-i-N Schottky (MPS)...

Gallium nitride-based schottky barrier diode with aluminum gallium...

Method and system for a GaN vertical JFET with self-aligned source...

GaN-based Schottky barrier diode with field plate

GaN-based Schottky barrier diode with field plate

Vertical GaN-based metal insulator semiconductor FET

Patents Applicationslast 30 patents

METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...

METHOD AND SYSTEM FOR IN-SITU ETCH AND REGROWTH IN GALLIUM NITRIDE...

GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING A...

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...

METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS)...

GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER

METHOD AND SYSTEM FOR A GALLIUM NITRIDE VERTICAL JFET WITH SELF-ALI...

METHOD OF FABRICATING A GALLIUM NITRIDE MERGED P-I-N SCHOTTKY (MPS)...

GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE

METHOD AND SYSTEM FOR IN-SITU AND REGROWTH IN GALLIUM NITRIDE BASED...

METHOD AND SYSTEM FOR A GAN VERTICAL JFET WITH SELF-ALIGNED SOURCE...

Vertical GaN-Based Metal Insulator Semiconductor FET

GAN-BASED SCHOTTKY BARRIER DIODE WITH FIELD PLATE

GAN-BASED SCHOTTKY BARRIER DIODE WITH ALGAN SURFACE LAYER