Madhur Bobde

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Bottom source trench MOSFET with shield electrode
- Patent number 11,869,967
- Issue date Jan 9, 2024
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Sik Lui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor package having thin substrate and method of making th...
- Patent number 11,784,141
- Issue date Oct 10, 2023
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Jun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC MOSFET with reduced channel length and high Vth
- Patent number 11,776,994
- Issue date Oct 3, 2023
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- David Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT light load efficiency
- Patent number 11,756,993
- Issue date Sep 12, 2023
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device incorporating epitaxial layer field stop zone
- Patent number 11,749,716
- Issue date Sep 5, 2023
- Alpha and Omega Semiconductor (Cayman) LTD
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer level chip scale semiconductor package
- Patent number 11,721,665
- Issue date Aug 8, 2023
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Yan Xun Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMOS FET chip scale package and method of making the same
- Patent number 11,699,627
- Issue date Jul 11, 2023
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Yan Xun Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sawtooh electric field drift region structure for planar and trench...
- Patent number 11,594,613
- Issue date Feb 28, 2023
- Alpha & Omega Semiconductor, Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode integrated into superjunction power MOSFETs
- Patent number 11,538,933
- Issue date Dec 27, 2022
- Alpha and Omega Semiconductor (Cayman) LTD
- Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming super-junction corner and termination structure...
- Patent number 11,508,819
- Issue date Nov 22, 2022
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor package having thin substrate and method of making th...
- Patent number 11,495,548
- Issue date Nov 8, 2022
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Jun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for semi-wafer level packaging
- Patent number 11,430,762
- Issue date Aug 30, 2022
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Yan Xun Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Intelligent power module containing IGBT and super-junction MOSFET
- Patent number 11,417,648
- Issue date Aug 16, 2022
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Bum-Seok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Improving IGBT light load efficiency
- Patent number 11,342,410
- Issue date May 24, 2022
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide trench semiconductor device
- Patent number 11,245,016
- Issue date Feb 8, 2022
- Alpha and Omega Semiconductor (Cayman) LTD
- David Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sawtooh electric field drift region structure for planar and trench...
- Patent number 11,038,037
- Issue date Jun 15, 2021
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction corner and termination structure with graded sidewalls
- Patent number 11,038,022
- Issue date Jun 15, 2021
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device incorporating epitaxial layer field stop zone
- Patent number 11,031,465
- Issue date Jun 8, 2021
- Alpha and Omega Semiconductor (Cayman) LTD
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-gate trench IGBT with buried floating P-type shield
- Patent number 10,998,264
- Issue date May 4, 2021
- Alpha and Omega Semiconductor Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Common source land grid array package
- Patent number 10,991,680
- Issue date Apr 27, 2021
- ALPHA AND OMEGA SEMICONDUCTOR (CAYMAN), LTD
- Yan Xun Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combined IGBT and superjunction MOSFET device with tuned switching...
- Patent number 10,931,276
- Issue date Feb 23, 2021
- Alpha and Omega Semiconductor (Cayman) LTD
- Bum-Seok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode integrated into superjunction power MOSFETs
- Patent number 10,818,788
- Issue date Oct 27, 2020
- Alpha and Omega Semiconductor (Cayman) LTD
- Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-gate trench IGBT with buried floating P-type shield
- Patent number 10,804,355
- Issue date Oct 13, 2020
- Alpha and Omega Semiconductor Incorporated
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming including superjunction...
- Patent number 10,755,931
- Issue date Aug 25, 2020
- Alpha and Omega Semiconductor Incorporated
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process method and structure for high voltage MOSFETs
- Patent number 10,686,056
- Issue date Jun 16, 2020
- Alpha and Omega Semiconductor Incorporated
- Yangping Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Topside structures for an insulated gate bipolar transistor (IGBT)...
- Patent number 10,686,062
- Issue date Jun 16, 2020
- Alpha and Omega Semiconductor Incorporated
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET device and the preparation method thereof
- Patent number 10,665,551
- Issue date May 26, 2020
- Alpha and Omega Semiconductor (Cayman) LTD
- Xiaobin Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SGT superjunction MOSFET structure
- Patent number 10,644,102
- Issue date May 5, 2020
- Alpha and Omega Semiconductor (Cayman) LTD
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super-junction corner and termination structure with improved break...
- Patent number 10,580,868
- Issue date Mar 3, 2020
- Alpha and Omega Semiconductor (Cayman) LTD
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating anode shorted field stop insulated gate bip...
- Patent number 10,522,666
- Issue date Dec 31, 2019
- Alpha and Omega Semiconductor Incorporated
- Anup Bhalla
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DUAL P-BODY DOSE REVERSE-CONDUCTING (DPD-RC) IGBT STRUCTURE
- Publication number 20240332287
- Publication date Oct 3, 2024
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Zhibo Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PACKAGE HAVING WETTABLE LEAD FLANKS AND TIE BARS AND...
- Publication number 20230420340
- Publication date Dec 28, 2023
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Yan Xun Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Density Shield Gate Transistor Structure and Method of Making
- Publication number 20230238440
- Publication date Jul 27, 2023
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM SOURCE TRENCH MOSFET WITH SHIELD ELECTRODE
- Publication number 20230049581
- Publication date Feb 16, 2023
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Sik Lui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE INTEGRATED INTO SUPERJUNCTION POWER MOSFETS
- Publication number 20230045954
- Publication date Feb 16, 2023
- Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PACKAGE HAVING THIN SUBSTRATE AND METHOD OF MAKING TH...
- Publication number 20230021687
- Publication date Jan 26, 2023
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Jun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER LEVEL CHIP SCALE SEMICONDUCTOR PACKAGE
- Publication number 20220278076
- Publication date Sep 1, 2022
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Yan Xun Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DMOS FET CHIP SCALE PACKAGE AND METHOD OF MAKING THE SAME
- Publication number 20220278009
- Publication date Sep 1, 2022
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Yan Xun Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC MOSFET WITH REDUCED CHANNEL LENGTH AND HIGH VTH
- Publication number 20220262896
- Publication date Aug 18, 2022
- Alpha and Omega Semiconductor International LP
- David Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT LIGHT LOAD EFFICIENCY
- Publication number 20220262898
- Publication date Aug 18, 2022
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SEMI-WAFER LEVEL PACKAGING
- Publication number 20220208724
- Publication date Jun 30, 2022
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Yan Xun Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SAWTOOH ELECTRIC FIELD DRIFT REGION STRUCTURE FOR PLANAR AND TRENCH...
- Publication number 20210305406
- Publication date Sep 30, 2021
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE
- Publication number 20210273046
- Publication date Sep 2, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE...
- Publication number 20210257461
- Publication date Aug 19, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE TRENCH SEMICONDUCTOR DEVICE
- Publication number 20210242319
- Publication date Aug 5, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- David Sheridan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PACKAGE HAVING THIN SUBSTRATE AND METHOD OF MAKING TH...
- Publication number 20210125940
- Publication date Apr 29, 2021
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Jun Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTELLIGENT POWER MODULE CONTAINING IGBT AND SUPER-JUNCTION MOSFET
- Publication number 20210098448
- Publication date Apr 1, 2021
- ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP
- Bum-Seok Suh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVING IGBT LIGHT LOAD EFFICIENCY
- Publication number 20210098569
- Publication date Apr 1, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMMON SOURCE LAND GRID ARRAY PACKAGE
- Publication number 20210083088
- Publication date Mar 18, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Yan Xun Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE INTEGRATED INTO SUPERJUNCTION POWER MOSFETS
- Publication number 20210020773
- Publication date Jan 21, 2021
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEW DUAL-GATE TRENCH IGBT WITH BURIED FLOATING P-TYPE SHIELD
- Publication number 20210020567
- Publication date Jan 21, 2021
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Jun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SAWTOOH ELECTRIC FIELD DRIFT REGION STRUCTURE FOR PLANAR AND TRENCH...
- Publication number 20200303513
- Publication date Sep 24, 2020
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS METHOD AND STRUCTURE FOR HIGH VOLTAGE MOSFETS
- Publication number 20200303517
- Publication date Sep 24, 2020
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Yongping Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE WITH GRADED SIDEWALLS
- Publication number 20200161431
- Publication date May 21, 2020
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE WITH IMPROVED BREAK...
- Publication number 20190305088
- Publication date Oct 3, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE
- Publication number 20190273131
- Publication date Sep 5, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Lei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING INCLUDING SUPERJUNCTION...
- Publication number 20190214261
- Publication date Jul 11, 2019
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL SGT SUPERJUNCTION MOSFET STRUCTURE
- Publication number 20190206988
- Publication date Jul 4, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Karthik Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE INTEGRATED INTO SUPERJUNCTION POWER MOSFETS
- Publication number 20190189796
- Publication date Jun 20, 2019
- Alpha and Omega Semiconductor (Cayman) Ltd.
- Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A LATERAL SUPER-JUNCTION MOSFET DEVICE AND TERMI...
- Publication number 20190165169
- Publication date May 30, 2019
- ALPHA & OMEGA SEMICONDUCTOR INCORPORATED
- Madhur Bobde
- H01 - BASIC ELECTRIC ELEMENTS

Madhur Bobde

Person

Patents Grantslast 30 patents

Bottom source trench MOSFET with shield electrode

Semiconductor package having thin substrate and method of making th...

SiC MOSFET with reduced channel length and high Vth

IGBT light load efficiency

Semiconductor device incorporating epitaxial layer field stop zone

Wafer level chip scale semiconductor package

DMOS FET chip scale package and method of making the same

Sawtooh electric field drift region structure for planar and trench...

Schottky diode integrated into superjunction power MOSFETs

Method for forming super-junction corner and termination structure...

Semiconductor package having thin substrate and method of making th...

Method for semi-wafer level packaging

Intelligent power module containing IGBT and super-junction MOSFET

Improving IGBT light load efficiency

Silicon carbide trench semiconductor device

Sawtooh electric field drift region structure for planar and trench...

Super-junction corner and termination structure with graded sidewalls

Semiconductor device incorporating epitaxial layer field stop zone

Dual-gate trench IGBT with buried floating P-type shield

Common source land grid array package

Combined IGBT and superjunction MOSFET device with tuned switching...

Schottky diode integrated into superjunction power MOSFETs

Dual-gate trench IGBT with buried floating P-type shield

Semiconductor device and method of forming including superjunction...

Process method and structure for high voltage MOSFETs

Topside structures for an insulated gate bipolar transistor (IGBT)...

Trench MOSFET device and the preparation method thereof

SGT superjunction MOSFET structure

Super-junction corner and termination structure with improved break...

Methods for fabricating anode shorted field stop insulated gate bip...

Patents Applicationslast 30 patents

DUAL P-BODY DOSE REVERSE-CONDUCTING (DPD-RC) IGBT STRUCTURE

SEMICONDUCTOR PACKAGE HAVING WETTABLE LEAD FLANKS AND TIE BARS AND...

High Density Shield Gate Transistor Structure and Method of Making

BOTTOM SOURCE TRENCH MOSFET WITH SHIELD ELECTRODE

SCHOTTKY DIODE INTEGRATED INTO SUPERJUNCTION POWER MOSFETS

SEMICONDUCTOR PACKAGE HAVING THIN SUBSTRATE AND METHOD OF MAKING TH...

WAFER LEVEL CHIP SCALE SEMICONDUCTOR PACKAGE

DMOS FET CHIP SCALE PACKAGE AND METHOD OF MAKING THE SAME

SIC MOSFET WITH REDUCED CHANNEL LENGTH AND HIGH VTH

IGBT LIGHT LOAD EFFICIENCY

METHOD FOR SEMI-WAFER LEVEL PACKAGING

SAWTOOH ELECTRIC FIELD DRIFT REGION STRUCTURE FOR PLANAR AND TRENCH...

SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE

METHOD FOR FORMING SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE...

SILICON CARBIDE TRENCH SEMICONDUCTOR DEVICE

SEMICONDUCTOR PACKAGE HAVING THIN SUBSTRATE AND METHOD OF MAKING TH...

INTELLIGENT POWER MODULE CONTAINING IGBT AND SUPER-JUNCTION MOSFET

IMPROVING IGBT LIGHT LOAD EFFICIENCY

COMMON SOURCE LAND GRID ARRAY PACKAGE

SCHOTTKY DIODE INTEGRATED INTO SUPERJUNCTION POWER MOSFETS

NEW DUAL-GATE TRENCH IGBT WITH BURIED FLOATING P-TYPE SHIELD

SAWTOOH ELECTRIC FIELD DRIFT REGION STRUCTURE FOR PLANAR AND TRENCH...

PROCESS METHOD AND STRUCTURE FOR HIGH VOLTAGE MOSFETS

SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE WITH GRADED SIDEWALLS

SUPER-JUNCTION CORNER AND TERMINATION STRUCTURE WITH IMPROVED BREAK...

SEMICONDUCTOR DEVICE INCORPORATING EPITAXIAL LAYER FIELD STOP ZONE

SEMICONDUCTOR DEVICE AND METHOD OF FORMING INCLUDING SUPERJUNCTION...

NOVEL SGT SUPERJUNCTION MOSFET STRUCTURE

SCHOTTKY DIODE INTEGRATED INTO SUPERJUNCTION POWER MOSFETS

METHOD FOR FORMING A LATERAL SUPER-JUNCTION MOSFET DEVICE AND TERMI...