Mahaveer Sathaiya Dhanyakumar

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Hsinchu, TW

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Patents Grantslast 30 patents

Information Patent Grant
MOSFET structure with T-shaped epitaxial silicon channel
- Patent number 9,653,545
- Issue date May 16, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mahaveer Sathaiya Dhanyakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET structure with T-shaped epitaxial silicon channel
- Patent number 9,000,526
- Issue date Apr 7, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Mahaveer Sathaiya Dhanyakumar
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20230335617
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Mahaveer Sathaiya DHANYAKUMAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D-Channel Transistor Structure with Asymmetric Substrate Contacts
- Publication number 20220254890
- Publication date Aug 11, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Ting Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET STRUCTURE WITH T-SHAPED EPITAXIAL SILICON CHANNEL
- Publication number 20150194485
- Publication date Jul 9, 2015
- Taiwan Semiconductor Manufacturing Co., LTD
- Mahaveer Sathaiya Dhanyakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET STRUCTURE WITH T-SHAPED EPITAXIAL SILICON CHANNEL
- Publication number 20130113047
- Publication date May 9, 2013
- Taiwan Semiconductor Manufacturing Co., LTD
- Mahaveer Sathaiya Dhanyakumar
- H01 - BASIC ELECTRIC ELEMENTS