MAHENDRA PAKALA

Person

FREMONT, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical transistor fabrication for memory applications
- Patent number 12,108,604
- Issue date Oct 1, 2024
- Applied Materials, Inc.
- Jaesoo Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory devices and methods of formation
- Patent number 12,075,628
- Issue date Aug 27, 2024
- Applied Materials, Inc.
- Lin Xue
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for forming structures for MRAM applications
- Patent number 11,818,959
- Issue date Nov 14, 2023
- Applied Materials, Inc.
- Hsin-wei Tseng
Information Patent Grant
Three-color 3D DRAM stack and methods of making
- Patent number 11,764,058
- Issue date Sep 19, 2023
- Applied Materials, Inc.
- Arvind Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-orbit torque MRAM structure and manufacture thereof
- Patent number 11,723,283
- Issue date Aug 8, 2023
- Applied Materials, Inc.
- Minrui Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Top buffer layer for magnetic tunnel junction application
- Patent number 11,621,393
- Issue date Apr 4, 2023
- Applied Materials, Inc.
- Lin Xue
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction structures and methods of manufacture thereof
- Patent number 11,552,244
- Issue date Jan 10, 2023
- Applied Materials, Inc.
- Lin Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junctions with protection layers
- Patent number 11,522,126
- Issue date Dec 6, 2022
- Applied Materials, Inc.
- Lin Xue
- G11 - INFORMATION STORAGE
Information Patent Grant
Dram and method of making
- Patent number 11,456,301
- Issue date Sep 27, 2022
- Applied Materials, Inc.
- Arvind Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming ultra-smooth bottom electrode surface for deposit...
- Patent number 11,374,165
- Issue date Jun 28, 2022
- Applied Materials, Inc.
- Lin Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to form top contact to a magnetic tunnel junction
- Patent number 11,374,170
- Issue date Jun 28, 2022
- Applied Materials, Inc.
- Lin Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor fabrication for memory applications
- Patent number 11,264,460
- Issue date Mar 1, 2022
- Applied Materials, Inc.
- Arvind Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junctions suitable for high temperature thermal pro...
- Patent number 11,251,364
- Issue date Feb 15, 2022
- Applied Materials, Inc.
- Lin Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming structures with desired crystallinity for MRAM...
- Patent number 11,245,069
- Issue date Feb 8, 2022
- Applied Materials, Inc.
- Lin Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back end memory integration process
- Patent number 11,239,086
- Issue date Feb 1, 2022
- Applied Materials, Inc.
- Hsin-wei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for etching a structure for MRAM applications
- Patent number 11,145,808
- Issue date Oct 12, 2021
- Applied Materials, Inc.
- Jong Mun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming structures with desired crystallinity for MRAM...
- Patent number 11,133,460
- Issue date Sep 28, 2021
- Applied Materials, Inc.
- Lin Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor fabrication for memory applications
- Patent number 11,127,760
- Issue date Sep 21, 2021
- Applied Materials, Inc.
- Jaesoo Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming structures for MRAM applications
- Patent number 11,069,853
- Issue date Jul 20, 2021
- Applied Materials, Inc.
- Hsin-wei Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junctions with tunable high perpendicular magnetic...
- Patent number 10,998,496
- Issue date May 4, 2021
- Applied Materials, Inc.
- Lin Xue
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junctions with coupling-pinning layer lattice matching
- Patent number 10,957,849
- Issue date Mar 23, 2021
- Applied Materials, Inc.
- Lin Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction structures and methods of manufacture thereof
- Patent number 10,944,050
- Issue date Mar 9, 2021
- Applied Materials, Inc.
- Lin Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top buffer layer for magnetic tunnel junction application
- Patent number 10,923,652
- Issue date Feb 16, 2021
- Applied Materials, Inc.
- Lin Xue
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Spin orbit torque MRAM and manufacture thereof
- Patent number 10,756,259
- Issue date Aug 25, 2020
- Applied Materials, Inc.
- Jaesoo Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dram and method of making
- Patent number 10,727,232
- Issue date Jul 28, 2020
- Applied Materials, Inc.
- Arvind Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junctions with tunable high perpendicular magnetic...
- Patent number 10,636,964
- Issue date Apr 28, 2020
- Applied Materials, Inc.
- Lin Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junctions suitable for high temperature thermal pro...
- Patent number 10,622,011
- Issue date Apr 14, 2020
- Applied Materials, Inc.
- Lin Xue
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming ultra-smooth bottom electrode surface for deposit...
- Patent number 10,586,914
- Issue date Mar 10, 2020
- Applied Materials, Inc.
- Lin Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to improve film stability
- Patent number 10,566,188
- Issue date Feb 18, 2020
- Applied Materials, Inc.
- Maximillian Clemons
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming structures for MRAM applications
- Patent number 10,497,858
- Issue date Dec 3, 2019
- Applied Materials, Inc.
- Jaesoo Ahn
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
DUAL GATE STRUCTURE FOR MEMORY DEVICE
- Publication number 20240355929
- Publication date Oct 24, 2024
- Applied Materials, Inc.
- Arvind Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING SILICIDE IN HIGH-ASPECT RATIO STRUCTURES BY HYBRID...
- Publication number 20240332023
- Publication date Oct 3, 2024
- Applied Materials, Inc.
- Ying-Bing JIANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CONTACT CONSTRUCTION FOR SEMICONDUCTOR DEVICES WITH LOW-DIMENSIONAL...
- Publication number 20240306391
- Publication date Sep 12, 2024
- Applied Materials, Inc.
- Hao-Ling Tang
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WORDLINES WITH REDUCED BLOCKING LAY...
- Publication number 20240237337
- Publication date Jul 11, 2024
- Applied Materials, Inc.
- Jaesoo Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WORDLINES WITH REDUCED BLOCKING LAY...
- Publication number 20240138147
- Publication date Apr 25, 2024
- Applied Materials, Inc.
- Jaesoo Ahn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF
- Publication number 20230389441
- Publication date Nov 30, 2023
- Applied Materials, Inc.
- Minrui YU
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-COLOR 3D DRAM STACK AND METHODS OF MAKING
- Publication number 20230102558
- Publication date Mar 30, 2023
- Applied Materials, Inc.
- Arvind Kumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICES AND METHODS OF FORMATION
- Publication number 20220115439
- Publication date Apr 14, 2022
- Applied Materials, Inc.
- Lin XUE
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR FORMING STRUCTURES WITH DESIRED CRYSTALLINITY FOR MRAM...
- Publication number 20220013716
- Publication date Jan 13, 2022
- Applied Materials, Inc.
- Lin XUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR FABRICATION FOR MEMORY APPLICATIONS
- Publication number 20220005831
- Publication date Jan 6, 2022
- Applied Materials, Inc.
- Jaesoo AHN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF
- Publication number 20210351342
- Publication date Nov 11, 2021
- Applied Materials, Inc.
- Minrui YUI
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR FORMING STRUCTURES FOR MRAM APPLICATIONS
- Publication number 20210351344
- Publication date Nov 11, 2021
- Applied Materials, Inc.
- Hsin-wei TSENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTIONS WITH TUNABLE HIGH PERPENDICULAR MAGNETIC...
- Publication number 20210320247
- Publication date Oct 14, 2021
- Applied Materials, Inc.
- Lin XUE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION STRUCTURES AND METHODS OF MANUFACTURE THEREOF
- Publication number 20210193914
- Publication date Jun 24, 2021
- Applied Materials, Inc.
- Lin XUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for etching a structure for MRAM Applications
- Publication number 20210143323
- Publication date May 13, 2021
- Applied Materials, Inc.
- Jong Mun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP BUFFER LAYER FOR MAGNETIC TUNNEL JUNCTION APPLICATION
- Publication number 20210119119
- Publication date Apr 22, 2021
- Applied Materials, Inc.
- Lin XUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTIONS WITH PROTECTION LAYERS
- Publication number 20210111338
- Publication date Apr 15, 2021
- Applied Materials, Inc.
- Lin XUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR FABRICATION FOR MEMORY APPLICATIONS
- Publication number 20210028282
- Publication date Jan 28, 2021
- Applied Materials, Inc.
- Arvind KUMAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP BUFFER LAYER FOR MAGNETIC TUNNEL JUNCTION APPLICATION
- Publication number 20200403152
- Publication date Dec 24, 2020
- Applied Materials, Inc.
- Lin XUE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DRAM AND METHOD OF MAKING
- Publication number 20200350318
- Publication date Nov 5, 2020
- Applied Materials, Inc.
- Arvind KUMAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTIONS WITH TUNABLE HIGH PERPENDICULAR MAGNETIC...
- Publication number 20200259078
- Publication date Aug 13, 2020
- Applied Materials, Inc.
- Lin XUE
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL TRANSISTOR FABRICATION FOR MEMORY APPLICATIONS
- Publication number 20200251495
- Publication date Aug 6, 2020
- Applied Materials, Inc.
- Jaesoo AHN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING ULTRA-SMOOTH BOTTOM ELECTRODE SURFACE FOR DEPOSIT...
- Publication number 20200203600
- Publication date Jun 25, 2020
- Applied Materials, Inc.
- Lin XUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTIONS SUITABLE FOR HIGH TEMPERATURE THERMAL PRO...
- Publication number 20200160884
- Publication date May 21, 2020
- Applied Materials, Inc.
- Lin XUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN ORBIT TORQUE MRAM AND MANUFACTURE THEREOF
- Publication number 20200161542
- Publication date May 21, 2020
- Applied Materials, Inc.
- Jaesoo AHN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING STRUCTURES FOR MRAM APPLICATIONS
- Publication number 20200161541
- Publication date May 21, 2020
- Applied Materials, Inc.
- Hsin-wei TSENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAM AND METHOD OF MAKING
- Publication number 20200144272
- Publication date May 7, 2020
- Applied Materials, Inc.
- Arvind KUMAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS TO FORM TOP CONTACT TO A MAGNETIC TUNNEL JUNCTION
- Publication number 20200098981
- Publication date Mar 26, 2020
- Applied Materials, Inc.
- Lin XUE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHYSICAL VAPOR DEPOSITION OF DOPED TRANSITION METAL OXIDE AND POST-...
- Publication number 20200044152
- Publication date Feb 6, 2020
- Applied Materials, Inc.
- MINRUI YU
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MAGNETIC TUNNEL JUNCTIONS WITH COUPLING - PINNING LAYER LATTICE MAT...
- Publication number 20190363246
- Publication date Nov 28, 2019
- Applied Materials, Inc.
- Lin XUE
- H01 - BASIC ELECTRIC ELEMENTS

MAHENDRA PAKALA

Person

Patents Grantslast 30 patents

Vertical transistor fabrication for memory applications

Magnetic memory devices and methods of formation

Methods for forming structures for MRAM applications

Three-color 3D DRAM stack and methods of making

Spin-orbit torque MRAM structure and manufacture thereof

Top buffer layer for magnetic tunnel junction application

Magnetic tunnel junction structures and methods of manufacture thereof

Magnetic tunnel junctions with protection layers

Dram and method of making

Method of forming ultra-smooth bottom electrode surface for deposit...

Methods to form top contact to a magnetic tunnel junction

Vertical transistor fabrication for memory applications

Magnetic tunnel junctions suitable for high temperature thermal pro...

Methods for forming structures with desired crystallinity for MRAM...

Back end memory integration process

Methods for etching a structure for MRAM applications

Methods for forming structures with desired crystallinity for MRAM...

Vertical transistor fabrication for memory applications

Methods for forming structures for MRAM applications

Magnetic tunnel junctions with tunable high perpendicular magnetic...

Magnetic tunnel junctions with coupling-pinning layer lattice matching

Magnetic tunnel junction structures and methods of manufacture thereof

Top buffer layer for magnetic tunnel junction application

Spin orbit torque MRAM and manufacture thereof

Dram and method of making

Magnetic tunnel junctions with tunable high perpendicular magnetic...

Magnetic tunnel junctions suitable for high temperature thermal pro...

Method of forming ultra-smooth bottom electrode surface for deposit...

Method to improve film stability

Methods for forming structures for MRAM applications

Patents Applicationslast 30 patents

DUAL GATE STRUCTURE FOR MEMORY DEVICE

METHOD OF MAKING SILICIDE IN HIGH-ASPECT RATIO STRUCTURES BY HYBRID...

CONTACT CONSTRUCTION FOR SEMICONDUCTOR DEVICES WITH LOW-DIMENSIONAL...

THREE-DIMENSIONAL MEMORY DEVICE WORDLINES WITH REDUCED BLOCKING LAY...

THREE-DIMENSIONAL MEMORY DEVICE WORDLINES WITH REDUCED BLOCKING LAY...

SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF

THREE-COLOR 3D DRAM STACK AND METHODS OF MAKING

MAGNETIC MEMORY DEVICES AND METHODS OF FORMATION

METHODS FOR FORMING STRUCTURES WITH DESIRED CRYSTALLINITY FOR MRAM...

VERTICAL TRANSISTOR FABRICATION FOR MEMORY APPLICATIONS

SPIN-ORBIT TORQUE MRAM STRUCTURE AND MANUFACTURE THEREOF

METHODS FOR FORMING STRUCTURES FOR MRAM APPLICATIONS

MAGNETIC TUNNEL JUNCTIONS WITH TUNABLE HIGH PERPENDICULAR MAGNETIC...

MAGNETIC TUNNEL JUNCTION STRUCTURES AND METHODS OF MANUFACTURE THEREOF

Methods for etching a structure for MRAM Applications

TOP BUFFER LAYER FOR MAGNETIC TUNNEL JUNCTION APPLICATION

MAGNETIC TUNNEL JUNCTIONS WITH PROTECTION LAYERS

VERTICAL TRANSISTOR FABRICATION FOR MEMORY APPLICATIONS

TOP BUFFER LAYER FOR MAGNETIC TUNNEL JUNCTION APPLICATION

DRAM AND METHOD OF MAKING

MAGNETIC TUNNEL JUNCTIONS WITH TUNABLE HIGH PERPENDICULAR MAGNETIC...

VERTICAL TRANSISTOR FABRICATION FOR MEMORY APPLICATIONS

METHOD OF FORMING ULTRA-SMOOTH BOTTOM ELECTRODE SURFACE FOR DEPOSIT...

MAGNETIC TUNNEL JUNCTIONS SUITABLE FOR HIGH TEMPERATURE THERMAL PRO...

SPIN ORBIT TORQUE MRAM AND MANUFACTURE THEREOF

METHODS FOR FORMING STRUCTURES FOR MRAM APPLICATIONS

DRAM AND METHOD OF MAKING

METHODS TO FORM TOP CONTACT TO A MAGNETIC TUNNEL JUNCTION

PHYSICAL VAPOR DEPOSITION OF DOPED TRANSITION METAL OXIDE AND POST-...

MAGNETIC TUNNEL JUNCTIONS WITH COUPLING - PINNING LAYER LATTICE MAT...