Mahmut Sami Kavrik

Person

Eugene, OR, US

People

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUITS WITH MONOLAYER TMD CHANNEL AND MULTILAYER TMD S...
- Publication number 20240355934
- Publication date Oct 24, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION BEAM LITHOGRAPHY AND NANOENGINEERING
- Publication number 20240222073
- Publication date Jul 4, 2024
- Intel Corporation
- Shida Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS
- Publication number 20240222428
- Publication date Jul 4, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF NOVEL DEVICES USING ION BEAMS
- Publication number 20240222126
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL CONTACT METALS FOR 2D TRANSISTORS
- Publication number 20240222461
- Publication date Jul 4, 2024
- Intel Corporation
- Ande Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...
- Publication number 20240222482
- Publication date Jul 4, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...
- Publication number 20240222484
- Publication date Jul 4, 2024
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...
- Publication number 20240222113
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D NANORIBBONS UTILIZING SILICON SCAFFOLDING
- Publication number 20240222483
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...
- Publication number 20240222485
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES
- Publication number 20240222441
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS

Mahmut Sami Kavrik

Person

Patents Applicationslast 30 patents

INTEGRATED CIRCUITS WITH MONOLAYER TMD CHANNEL AND MULTILAYER TMD S...

ION BEAM LITHOGRAPHY AND NANOENGINEERING

SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS

FABRICATION OF NOVEL DEVICES USING ION BEAMS

BEOL CONTACT METALS FOR 2D TRANSISTORS

TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...

TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...

PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...

SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES