Mahmut Sami Kavrik

Person

Eugene, OR, US

People

Patents Applicationslast 30 patents

Information Patent Application
ENHANCING DEVICE PERFORMANCE BY MITIGATION OF OXYGEN MIGRATION IN H...
- Publication number 20250220921
- Publication date Jul 3, 2025
- Intel Corporation
- Mahmut Sami Kavrik
Information Patent Application
METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES
- Publication number 20250113599
- Publication date Apr 3, 2025
- Intel Corporation
- Rachel A. Steinhardt
Information Patent Application
BACKSIDE POWER GATING
- Publication number 20250112122
- Publication date Apr 3, 2025
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT TRANSFER OF TRANSITION METAL DICHALCOGENIDE MONOLAYERS USING...
- Publication number 20250113521
- Publication date Apr 3, 2025
- Intel Corporation
- Andrey Vyatskikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIV...
- Publication number 20250113572
- Publication date Apr 3, 2025
- Intel Corporation
- Mahmut Sami Kavrik
Information Patent Application
TRANSITION METAL DICHALCOGENIDE MONOLAYER TRANSFER USING LOW STRAIN...
- Publication number 20250113573
- Publication date Apr 3, 2025
- Intel Corporation
- Andrey Vyatskikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACERS FOR 2D CHANNEL...
- Publication number 20250113547
- Publication date Apr 3, 2025
- Intel Corporation
- Chia-Ching LIN
Information Patent Application
TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND MET...
- Publication number 20250113540
- Publication date Apr 3, 2025
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARCHITECTURES AND METHODS TO MODULATE CONTACT RESISTANCE IN 2D MATE...
- Publication number 20250107147
- Publication date Mar 27, 2025
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH MONOLAYER TMD CHANNEL AND MULTILAYER TMD S...
- Publication number 20240355934
- Publication date Oct 24, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION BEAM LITHOGRAPHY AND NANOENGINEERING
- Publication number 20240222073
- Publication date Jul 4, 2024
- Intel Corporation
- Shida Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS
- Publication number 20240222428
- Publication date Jul 4, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF NOVEL DEVICES USING ION BEAMS
- Publication number 20240222126
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL CONTACT METALS FOR 2D TRANSISTORS
- Publication number 20240222461
- Publication date Jul 4, 2024
- Intel Corporation
- Ande Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...
- Publication number 20240222482
- Publication date Jul 4, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...
- Publication number 20240222484
- Publication date Jul 4, 2024
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...
- Publication number 20240222113
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D NANORIBBONS UTILIZING SILICON SCAFFOLDING
- Publication number 20240222483
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...
- Publication number 20240222485
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES
- Publication number 20240222441
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS

Mahmut Sami Kavrik

Person

Patents Applicationslast 30 patents

ENHANCING DEVICE PERFORMANCE BY MITIGATION OF OXYGEN MIGRATION IN H...

METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES

BACKSIDE POWER GATING

DIRECT TRANSFER OF TRANSITION METAL DICHALCOGENIDE MONOLAYERS USING...

METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIV...

TRANSITION METAL DICHALCOGENIDE MONOLAYER TRANSFER USING LOW STRAIN...

INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACERS FOR 2D CHANNEL...

TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND MET...

ARCHITECTURES AND METHODS TO MODULATE CONTACT RESISTANCE IN 2D MATE...

INTEGRATED CIRCUITS WITH MONOLAYER TMD CHANNEL AND MULTILAYER TMD S...

ION BEAM LITHOGRAPHY AND NANOENGINEERING

SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS

FABRICATION OF NOVEL DEVICES USING ION BEAMS

BEOL CONTACT METALS FOR 2D TRANSISTORS

TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...

TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...

PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...

SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES