Makoto Iida

Person

Gunma, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Single-crystal manufacturing method
- Patent number 8,308,864
- Issue date Nov 13, 2012
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing semiconductor wafers and a system for determin...
- Patent number 7,749,865
- Issue date Jul 6, 2010
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Method for producing a single crystal
- Patent number 7,582,159
- Issue date Sep 1, 2009
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing a single crystal and a single crystal
- Patent number 7,384,477
- Issue date Jun 10, 2008
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for preparing nitrogen-doped annealed wafer and nitrogen-dop...
- Patent number 7,326,658
- Issue date Feb 5, 2008
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a single crystal and a single crystal
- Patent number 7,323,048
- Issue date Jan 29, 2008
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Graphite heater for producing single crystal, apparatus for produci...
- Patent number 7,258,744
- Issue date Aug 21, 2007
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon single crystal wafer having void denuded zone on the surfac...
- Patent number 6,902,618
- Issue date Jun 7, 2005
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer and production method thereof and soi...
- Patent number 6,843,847
- Issue date Jan 18, 2005
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealed wafer manufacturing method and annealed wafer
- Patent number 6,841,450
- Issue date Jan 11, 2005
- Shin-Etsu Handotai Co., Ltd.
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon wafer, method for determining production conditions of sili...
- Patent number 6,599,360
- Issue date Jul 29, 2003
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- G01 - MEASURING TESTING
Information Patent Grant
Silicon single crystal wafer for epitaxial wafer, epitaxial wafer,...
- Patent number 6,548,035
- Issue date Apr 15, 2003
- Shin-Etsu Handotai Co., Ltd.
- Akihiro Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon single crystal, silicon single cry...
- Patent number 6,544,332
- Issue date Apr 8, 2003
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon wafer and production method thereof and evaluation method f...
- Patent number 6,544,490
- Issue date Apr 8, 2003
- Shin-Etsu Handotai Co., Ltd.
- Hiroshi Takeno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for manufacturing a silicon single crystal hav...
- Patent number 6,364,947
- Issue date Apr 2, 2002
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer having few crystal defects
- Patent number 6,348,180
- Issue date Feb 19, 2002
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-crystal silicon wafer having few crystal defects and method...
- Patent number 6,334,896
- Issue date Jan 1, 2002
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer and method for producing silicon singl...
- Patent number 6,299,982
- Issue date Oct 9, 2001
- Shin-Etsu Handotai Co., Ltd.
- Masaro Tamatsuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer having few defects wherein nitrogen is...
- Patent number 6,261,361
- Issue date Jul 17, 2001
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing low defect silicon single crystal doped with n...
- Patent number 6,197,109
- Issue date Mar 6, 2001
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon single crystal wafer and silicon singl...
- Patent number 6,191,009
- Issue date Feb 20, 2001
- Shin-Etsu Handotai Co., Ltd.
- Masaro Tamatsuka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for manufacturing a silicon single crystal hav...
- Patent number 6,159,438
- Issue date Dec 12, 2000
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal with no crystal defect in peripheral part of...
- Patent number 6,120,749
- Issue date Sep 19, 2000
- Shin-Etsu Handotai Co., Ltd.
- Kiyotaka Takano
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a silicon single crystal having few crystal de...
- Patent number 6,120,598
- Issue date Sep 19, 2000
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer having few crystal defects, and method...
- Patent number 6,120,599
- Issue date Sep 19, 2000
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer having few defects wherein nitrogen is...
- Patent number 6,077,343
- Issue date Jun 20, 2000
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon single crystal wafer having few crystal defects, and method...
- Patent number 6,066,306
- Issue date May 23, 2000
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal holding apparatus
- Patent number 6,053,975
- Issue date Apr 25, 2000
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a silicon single crystal having few crystal de...
- Patent number 6,048,395
- Issue date Apr 11, 2000
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a silicon single crystal having few crystal de...
- Patent number 6,027,562
- Issue date Feb 22, 2000
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SINGLE-CRYSTAL MANUFACTURING METHOD
- Publication number 20110271898
- Publication date Nov 10, 2011
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Application
System for Manufacturing Silicon Single Crystal and Method for Manu...
- Publication number 20100031869
- Publication date Feb 11, 2010
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Semiconductor Wafers and a System for Determin...
- Publication number 20070243695
- Publication date Oct 18, 2007
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
A method for producing a single crystal and an apparatus for produc...
- Publication number 20070163487
- Publication date Jul 19, 2007
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal, a silicon wafer, an apparatus for producing...
- Publication number 20070158653
- Publication date Jul 12, 2007
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing single crystal and single crystal
- Publication number 20070017433
- Publication date Jan 25, 2007
- Shin-Etsu Handotai Co., Ltd.
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing single crystal and single crystal
- Publication number 20070000429
- Publication date Jan 4, 2007
- Shin-Etsu Handotai Co., Ltd.
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Application
Graphite heater for producing single crystal, single crystal produc...
- Publication number 20050205004
- Publication date Sep 22, 2005
- Masahiro Sakurada
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon single crystal wafer having void denuded zone on the surfac...
- Publication number 20030172865
- Publication date Sep 18, 2003
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for preparing nitrogen-doped annealed wafer and nitrogen-dop...
- Publication number 20030157814
- Publication date Aug 21, 2003
- Makoto Iida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Wafer, Method for Determining Production Conditions of Sili...
- Publication number 20030015131
- Publication date Jan 23, 2003
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon wafer, silicon epitaxial wafer, anneal wafer and method for...
- Publication number 20020179003
- Publication date Dec 5, 2002
- Makoto Iida
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of producing anneal wafer and anneal wafer
- Publication number 20020173173
- Publication date Nov 21, 2002
- Norihiro Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS

Makoto Iida

Person

Patents Grantslast 30 patents

Single-crystal manufacturing method

Method for producing semiconductor wafers and a system for determin...

Method for producing a single crystal

Method for producing a single crystal and a single crystal

Method for preparing nitrogen-doped annealed wafer and nitrogen-dop...

Method for producing a single crystal and a single crystal

Graphite heater for producing single crystal, apparatus for produci...

Silicon single crystal wafer having void denuded zone on the surfac...

Silicon single crystal wafer and production method thereof and soi...

Annealed wafer manufacturing method and annealed wafer

Silicon wafer, method for determining production conditions of sili...

Silicon single crystal wafer for epitaxial wafer, epitaxial wafer,...

Method for manufacturing silicon single crystal, silicon single cry...

Silicon wafer and production method thereof and evaluation method f...

Method and apparatus for manufacturing a silicon single crystal hav...

Silicon single crystal wafer having few crystal defects

Single-crystal silicon wafer having few crystal defects and method...

Silicon single crystal wafer and method for producing silicon singl...

Silicon single crystal wafer having few defects wherein nitrogen is...

Method for producing low defect silicon single crystal doped with n...

Method for producing silicon single crystal wafer and silicon singl...

Method and apparatus for manufacturing a silicon single crystal hav...

Silicon single crystal with no crystal defect in peripheral part of...

Method for producing a silicon single crystal having few crystal de...

Silicon single crystal wafer having few crystal defects, and method...

Silicon single crystal wafer having few defects wherein nitrogen is...

Silicon single crystal wafer having few crystal defects, and method...

Crystal holding apparatus

Method for producing a silicon single crystal having few crystal de...

Method for producing a silicon single crystal having few crystal de...

Patents Applicationslast 30 patents

SINGLE-CRYSTAL MANUFACTURING METHOD

System for Manufacturing Silicon Single Crystal and Method for Manu...

Method for Producing Semiconductor Wafers and a System for Determin...

A method for producing a single crystal and an apparatus for produc...

Silicon single crystal, a silicon wafer, an apparatus for producing...

Process for producing single crystal and single crystal

Method for producing single crystal and single crystal

Graphite heater for producing single crystal, single crystal produc...

Silicon single crystal wafer having void denuded zone on the surfac...

Method for preparing nitrogen-doped annealed wafer and nitrogen-dop...

Silicon Wafer, Method for Determining Production Conditions of Sili...

Silicon wafer, silicon epitaxial wafer, anneal wafer and method for...

Method of producing anneal wafer and anneal wafer