Makoto MIYOSHI

Person

Inazawa-Shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Epitaxial substrate for semiconductor device, semiconductor device,...
- Patent number 9,382,641
- Issue date Jul 5, 2016
- NGK Insulators, Ltd.
- Mikiya Ichimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device
- Patent number 9,171,914
- Issue date Oct 27, 2015
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate comprising a superlattice group and method for...
- Patent number 9,090,993
- Issue date Jul 28, 2015
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate for semiconductor element, semiconductor elemen...
- Patent number 9,024,325
- Issue date May 5, 2015
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate and method for manufacturing epitaxial substrate
- Patent number 8,969,880
- Issue date Mar 3, 2015
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate and method for manufacturing epitaxial substrate
- Patent number 8,946,723
- Issue date Feb 3, 2015
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride epitaxial substrate for semiconductor device, sem...
- Patent number 8,890,208
- Issue date Nov 18, 2014
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group III nitride epitaxial substrate for semiconductor device, sem...
- Patent number 8,872,226
- Issue date Oct 28, 2014
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate for semiconductor device, semiconductor device,...
- Patent number 8,860,084
- Issue date Oct 14, 2014
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate for semiconductor device, method for manufactur...
- Patent number 8,853,828
- Issue date Oct 7, 2014
- NGK Insulators, Ltd.
- Shigeaki Sumiya
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate for semiconductor device, method for manufactur...
- Patent number 8,853,829
- Issue date Oct 7, 2014
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial substrate for semiconductor device and semiconductor device
- Patent number 8,853,735
- Issue date Oct 7, 2014
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate and method for manufacturing epitaxial substrate
- Patent number 8,648,351
- Issue date Feb 11, 2014
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate for semiconductor device, schottky junction str...
- Patent number 8,598,626
- Issue date Dec 3, 2013
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate with intermediate layers for reinforcing compre...
- Patent number 8,471,265
- Issue date Jun 25, 2013
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate for semiconductor element, semiconductor elemen...
- Patent number 8,415,690
- Issue date Apr 9, 2013
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial substrate for semiconductor device, semiconductor device,...
- Patent number 8,410,552
- Issue date Apr 2, 2013
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing group III nitride single crystals
- Patent number 8,404,045
- Issue date Mar 26, 2013
- NGK Insulators, Ltd.
- Yoshitaka Kuraoka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate for semiconductor device, semiconductor device,...
- Patent number 8,378,386
- Issue date Feb 19, 2013
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-receiving device and manufacturing method for a light-receivi...
- Patent number 8,350,290
- Issue date Jan 8, 2013
- NGK Insulators, Ltd.
- Makoto Miyoshi
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Semiconductor device
- Patent number 8,044,485
- Issue date Oct 25, 2011
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic sensor, hall element, hall IC, magnetoresistive effect ele...
- Patent number 8,026,718
- Issue date Sep 27, 2011
- NGK Insulators, Ltd.
- Makoto Miyoshi
- G01 - MEASURING TESTING
Information Patent Grant
MIS gate structure type HEMT device and method of fabricating MIS g...
- Patent number 8,008,689
- Issue date Aug 30, 2011
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate, semiconductor device substrate, and HEMT device
- Patent number 7,982,241
- Issue date Jul 19, 2011
- NGK Insulators, Ltd.
- Yoshitaka Kuraoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor multilayer structure, semiconductor device and HEMT d...
- Patent number 7,199,408
- Issue date Apr 3, 2007
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride film including high-resistivity Ga...
- Patent number 7,135,347
- Issue date Nov 14, 2006
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermoelectric conversion module and method of manufacturing the same
- Patent number 6,306,673
- Issue date Oct 23, 2001
- NGK Insulators, Ltd.
- Yuichiro Imanishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type thermoelectric converting substance and method of manufactur...
- Patent number 6,235,981
- Issue date May 22, 2001
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermoelectric conversion module and method of manufacturing the same
- Patent number 6,005,182
- Issue date Dec 21, 1999
- NGK Insulators, Ltd.
- Yuichiro Imanishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermoelectric conversion module and method of manufacturing the same
- Patent number 5,994,637
- Issue date Nov 30, 1999
- NGK Insulators, Ltd.
- Yuichiro Imanishi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTUR...
- Publication number 20130181327
- Publication date Jul 18, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...
- Publication number 20130168734
- Publication date Jul 4, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMEN...
- Publication number 20130134439
- Publication date May 30, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130119437
- Publication date May 16, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
- Publication number 20130092953
- Publication date Apr 18, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
- Publication number 20130043488
- Publication date Feb 21, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
- Publication number 20130032781
- Publication date Feb 7, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
- Publication number 20130026486
- Publication date Jan 31, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
- Publication number 20130026488
- Publication date Jan 31, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
- Publication number 20130020583
- Publication date Jan 24, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20130015466
- Publication date Jan 17, 2013
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMEN...
- Publication number 20120211765
- Publication date Aug 23, 2012
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR ELEMENT, HEMT ELEMENT, AND METHOD OF MANUFACTURING SE...
- Publication number 20120168771
- Publication date Jul 5, 2012
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE
- Publication number 20120161152
- Publication date Jun 28, 2012
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTUR...
- Publication number 20120126293
- Publication date May 24, 2012
- NGK INSULATORS, LTD
- Shigeaki Sumiya
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SCHOTTKY JUNCTION STR...
- Publication number 20110062493
- Publication date Mar 17, 2011
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...
- Publication number 20110049570
- Publication date Mar 3, 2011
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...
- Publication number 20110049571
- Publication date Mar 3, 2011
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...
- Publication number 20110024795
- Publication date Feb 3, 2011
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...
- Publication number 20110024796
- Publication date Feb 3, 2011
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...
- Publication number 20100289029
- Publication date Nov 18, 2010
- NGK Insulators, Ltd.
- Mikiya ICHIMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing group III nitride single crystals
- Publication number 20100107969
- Publication date May 6, 2010
- NGK Insulators, Ltd.
- Yoshitaka Kuraoka
- C30 - CRYSTAL GROWTH
Information Patent Application
LIGHT-RECEIVING DEVICE AND MANUFACTURING METHOD FOR A LIGHT-RECEIVI...
- Publication number 20100078679
- Publication date Apr 1, 2010
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
EPITAXIAL SUBSTRATE, SEMICONDUCTOR DEVICE SUBSTRATE, AND HEMT DEVICE
- Publication number 20100051961
- Publication date Mar 4, 2010
- NGK Insulators, Ltd.
- Yoshitaka Kuraoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC SENSOR, HALL ELEMENT, HALL IC, MAGNETORESISTIVE EFFECT ELE...
- Publication number 20090058411
- Publication date Mar 5, 2009
- NGK Insulators, Ltd.
- Makoto Miyoshi
- G01 - MEASURING TESTING
Information Patent Application
MIS GATE STRUCTURE TYPE HEMT DEVICE AND METHOD OF FABRICATING MIS G...
- Publication number 20090050938
- Publication date Feb 26, 2009
- NKG INSULATORS, LTD.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20070228519
- Publication date Oct 4, 2007
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20070215885
- Publication date Sep 20, 2007
- NGK Insulators, Ltd.
- Makoto MIYOSHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor multilayer structure, semiconductor device and HEMT d...
- Publication number 20050274980
- Publication date Dec 15, 2005
- NGK Insulators, Ltd.
- Makoto Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing nitride film including high-resistivity Ga...
- Publication number 20050009221
- Publication date Jan 13, 2005
- NGK Insulators, Ltd.
- Makoto Miyoshi
- C30 - CRYSTAL GROWTH

Makoto MIYOSHI

Person

Patents Grantslast 30 patents

Epitaxial substrate for semiconductor device, semiconductor device,...

Semiconductor device

Epitaxial substrate comprising a superlattice group and method for...

Epitaxial substrate for semiconductor element, semiconductor elemen...

Epitaxial substrate and method for manufacturing epitaxial substrate

Epitaxial substrate and method for manufacturing epitaxial substrate

Group III nitride epitaxial substrate for semiconductor device, sem...

Group III nitride epitaxial substrate for semiconductor device, sem...

Epitaxial substrate for semiconductor device, semiconductor device,...

Epitaxial substrate for semiconductor device, method for manufactur...

Epitaxial substrate for semiconductor device, method for manufactur...

Epitaxial substrate for semiconductor device and semiconductor device

Epitaxial substrate and method for manufacturing epitaxial substrate

Epitaxial substrate for semiconductor device, schottky junction str...

Epitaxial substrate with intermediate layers for reinforcing compre...

Epitaxial substrate for semiconductor element, semiconductor elemen...

Epitaxial substrate for semiconductor device, semiconductor device,...

Method for manufacturing group III nitride single crystals

Epitaxial substrate for semiconductor device, semiconductor device,...

Light-receiving device and manufacturing method for a light-receivi...

Semiconductor device

Magnetic sensor, hall element, hall IC, magnetoresistive effect ele...

MIS gate structure type HEMT device and method of fabricating MIS g...

Epitaxial substrate, semiconductor device substrate, and HEMT device

Semiconductor multilayer structure, semiconductor device and HEMT d...

Method for manufacturing nitride film including high-resistivity Ga...

Thermoelectric conversion module and method of manufacturing the same

P-type thermoelectric converting substance and method of manufactur...

Thermoelectric conversion module and method of manufacturing the same

Thermoelectric conversion module and method of manufacturing the same

Patents Applicationslast 30 patents

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTUR...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMEN...

SEMICONDUCTOR DEVICE

EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE

EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE

EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE

EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE

EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE

EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMEN...

SEMICONDUCTOR ELEMENT, HEMT ELEMENT, AND METHOD OF MANUFACTURING SE...

EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTUR...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SCHOTTKY JUNCTION STR...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...

EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE,...

Method for manufacturing group III nitride single crystals

LIGHT-RECEIVING DEVICE AND MANUFACTURING METHOD FOR A LIGHT-RECEIVI...

EPITAXIAL SUBSTRATE, SEMICONDUCTOR DEVICE SUBSTRATE, AND HEMT DEVICE

MAGNETIC SENSOR, HALL ELEMENT, HALL IC, MAGNETORESISTIVE EFFECT ELE...

MIS GATE STRUCTURE TYPE HEMT DEVICE AND METHOD OF FABRICATING MIS G...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

Semiconductor multilayer structure, semiconductor device and HEMT d...

Method for manufacturing nitride film including high-resistivity Ga...