Makoto NAGAMINE

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Electronic device and method for fabricating the same
- Patent number 10,586,917
- Issue date Mar 10, 2020
- SK Hynix Inc.
- Jong-Koo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device and method for fabricating the same
- Patent number 10,170,691
- Issue date Jan 1, 2019
- SK Hynix Inc.
- Jong-Koo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 9,529,714
- Issue date Dec 27, 2016
- SK Hynix Inc.
- Yang-Kon Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element
- Patent number 9,196,823
- Issue date Nov 24, 2015
- Kabushiki Kaisha Toshiba
- Makoto Nagamine
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element and manufacturing method thereof
- Patent number 9,070,866
- Issue date Jun 30, 2015
- Kabushiki Kaisha Toshiba
- Makoto Nagamine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive effect element and manufacturing method thereof
- Patent number 8,982,614
- Issue date Mar 17, 2015
- Kabushiki Kaisha Toshiba
- Makoto Nagamine
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,895,162
- Issue date Nov 25, 2014
- Kabushiki Kaisha Toshiba
- Katsuya Nishiyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element and magnetic random access memory
- Patent number 8,750,030
- Issue date Jun 10, 2014
- Kabushiki Kaisha Toshiba
- Koji Ueda
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,705,269
- Issue date Apr 22, 2014
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,686,521
- Issue date Apr 1, 2014
- Kabushiki Kaisha Toshiba
- Tadaomi Daibou
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,665,639
- Issue date Mar 4, 2014
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,547,737
- Issue date Oct 1, 2013
- Kabushiki Kaisha Toshiba
- Tadaomi Daibou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive effect element, magnetic memory
- Patent number 8,502,331
- Issue date Aug 6, 2013
- Kabushiki Kaisha Toshiba
- Eiji Kitagawa
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,305,801
- Issue date Nov 6, 2012
- Kabushiki Kaisha Toshiba
- Tadaomi Daibou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,218,355
- Issue date Jul 10, 2012
- Kabushiki Kaisha Toshiba
- Eiji Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,208,292
- Issue date Jun 26, 2012
- Kabushiki Kaisha Toshiba
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,173,447
- Issue date May 8, 2012
- Kabushiki Kaisha Toshiba
- Tomomasa Ueda
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element
- Patent number 8,143,684
- Issue date Mar 27, 2012
- Kabushiki Kaisha Toshiba
- Makoto Nagamine
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,107,281
- Issue date Jan 31, 2012
- Kabushiki Kaisha Toshiba
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 8,098,514
- Issue date Jan 17, 2012
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Magnetoresistive element
- Patent number 7,898,846
- Issue date Mar 1, 2011
- Kabushiki Kaisha Toshiba
- Makoto Nagamine
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 7,894,246
- Issue date Feb 22, 2011
- Kabushiki Kaisha Toshiba
- Tomomasa Ueda
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device manufacturing method, semiconductor device man...
- Patent number 6,287,988
- Issue date Sep 11, 2001
- Kabushiki Kaisha Toshiba
- Makoto Nagamine
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20190109280
- Publication date Apr 11, 2019
- SK hynix Inc.
- Jong-Koo LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE HAVING VARIABLE RESISTANCE ELEMENT
- Publication number 20190079873
- Publication date Mar 14, 2019
- SK hynix Inc.
- Yang-Kon KIM
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20170222133
- Publication date Aug 3, 2017
- SK HYNIX INC.
- Jong-Koo LIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20160043300
- Publication date Feb 11, 2016
- Yang-Kon KIM
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20150357557
- Publication date Dec 10, 2015
- Yang-Kon KIM
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF
- Publication number 20140284592
- Publication date Sep 25, 2014
- Makoto NAGAMINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF
- Publication number 20140284732
- Publication date Sep 25, 2014
- Makoto NAGAMINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20140085971
- Publication date Mar 27, 2014
- Makoto NAGAMINE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20130020659
- Publication date Jan 24, 2013
- Tadaomi Daibou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20120163070
- Publication date Jun 28, 2012
- Toshihiko Nagase
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20120099369
- Publication date Apr 26, 2012
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20120088125
- Publication date Apr 12, 2012
- NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY
- Katsuya NISHIYAMA
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20120069640
- Publication date Mar 22, 2012
- Kabushiki Kaisha Toshiba
- Toshihiko Nagase
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MAN...
- Publication number 20120068285
- Publication date Mar 22, 2012
- Kabushiki Kaisha Toshiba
- Eiji KITAGAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20120068139
- Publication date Mar 22, 2012
- Kabushiki Kaisha Toshiba
- Tadaomi Daibou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20120069642
- Publication date Mar 22, 2012
- Kabushiki Kaisha Toshiba
- Koji Ueda
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20110254114
- Publication date Oct 20, 2011
- Makoto NAGAMINE
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE ELEMENT
- Publication number 20110116305
- Publication date May 19, 2011
- Makoto Nagamine
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20110073970
- Publication date Mar 31, 2011
- Tadashi Kai
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20100315864
- Publication date Dec 16, 2010
- KABUSHIKI KAISHA TOSHIBA
- Tomomasa UEDA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20100244163
- Publication date Sep 30, 2010
- Tadaomi Daibou
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20090251951
- Publication date Oct 8, 2009
- Masatoshi Yoshikawa
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20090243008
- Publication date Oct 1, 2009
- Eiji Kitagawa
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT
- Publication number 20090225587
- Publication date Sep 10, 2009
- Makoto Nagamine
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20090080239
- Publication date Mar 26, 2009
- Toshihiko Nagase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT
- Publication number 20080253039
- Publication date Oct 16, 2008
- Makoto NAGAMINE
- G01 - MEASURING TESTING
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20080180859
- Publication date Jul 31, 2008
- Kabushiki Kaisha Toshiba
- Tomomasa UEDA
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive element
- Publication number 20070014149
- Publication date Jan 18, 2007
- Makoto Nagamine
- G11 - INFORMATION STORAGE

Makoto NAGAMINE

Person

Patents Grantslast 30 patents

Electronic device and method for fabricating the same

Electronic device and method for fabricating the same

Electronic device

Magnetoresistive effect element

Magnetoresistive effect element and manufacturing method thereof

Magnetoresistive effect element and manufacturing method thereof

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic random access memory

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistive effect element, magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistive element

Magnetoresistive element and magnetic memory

Magnetoresistive element and magnetic memory

Magnetoresistive element

Magnetoresistive element and magnetic memory

Semiconductor device manufacturing method, semiconductor device man...

Patents Applicationslast 30 patents

ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME

ELECTRONIC DEVICE HAVING VARIABLE RESISTANCE ELEMENT

ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME

ELECTRONIC DEVICE

ELECTRONIC DEVICE

MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF

MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF

MAGNETORESISTIVE EFFECT ELEMENT

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD OF MAN...

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETORESISTIVE EFFECT ELEMENT

MAGNETORESISTIVE ELEMENT

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE ELEMENT

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTIVE EFFECT ELEMENT

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

Magnetoresistive element