Mamoru Kurata

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Patents Grantslast 30 patents

Information Patent Grant
Heterojunction bipolar transistor
- Patent number 4,933,732
- Issue date Jun 12, 1990
- Kabushiki Kaisha Toshiba
- Riichi Katoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterostructure bipolar transistor
- Patent number 4,593,305
- Issue date Jun 3, 1986
- Kabushiki Kaisha Toshiba
- Mamoru Kurata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate turn-off type thyristor with separate semiconductor resistive...
- Patent number 4,127,863
- Issue date Nov 28, 1978
- Tokyo Shibaura Electric Co., Ltd.
- Mamoru Kurata
- H01 - BASIC ELECTRIC ELEMENTS