Man-Hsuan Lin

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide crystal
- Patent number 11,952,676
- Issue date Apr 9, 2024
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide crystal and method for manufacturing the same
- Patent number 10,851,470
- Issue date Dec 1, 2020
- GlobalWafers Co., Ltd.
- Ching-Shan Lin
- C30 - CRYSTAL GROWTH
Information Patent Grant
Bonded substrate for epitaxial growth and method of forming the same
- Patent number 10,608,078
- Issue date Mar 31, 2020
- GlobalWafers Co., Ltd.
- Chun-I Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate and method for forming the same
- Patent number 10,446,642
- Issue date Oct 15, 2019
- GlobalWafers Co., Ltd.
- Che-Ming Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the same
- Patent number 10,438,794
- Issue date Oct 8, 2019
- GlobalWafers Co., Ltd.
- Yen-Lun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial substrate and method of manufacturing the same
- Patent number 10,388,518
- Issue date Aug 20, 2019
- GlobalWafers Co., Ltd.
- Chun-I Fan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE CRYSTAL
- Publication number 20230002929
- Publication date Jan 5, 2023
- GLOBALWAFERS CO., LTD.
- CHING-SHAN LIN
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE CRYSTAL
- Publication number 20210054525
- Publication date Feb 25, 2021
- GLOBALWAFERS CO., LTD.
- CHING-SHAN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190106807
- Publication date Apr 11, 2019
- GLOBALWAFERS CO., LTD.
- CHING-SHAN LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20190006178
- Publication date Jan 3, 2019
- GLOBALWAFERS CO., LTD.
- Yen-Lun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BONDED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD OF FORMING THE SAME
- Publication number 20180315814
- Publication date Nov 1, 2018
- GLOBALWAFERS CO., LTD.
- CHUN-I FAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL SUBSTRATE AND METHOD FOR FORMING THE SAME
- Publication number 20180315815
- Publication date Nov 1, 2018
- GLOBALWAFERS CO., LTD.
- CHE-MING LIU
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20180286664
- Publication date Oct 4, 2018
- GLOBALWAFERS CO., LTD.
- Chun-I Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER SUSCEPTOR
- Publication number 20180144962
- Publication date May 24, 2018
- GLOBALWAFERS CO., LTD.
- Tang-Chi Lin
- H01 - BASIC ELECTRIC ELEMENTS

Man-Hsuan Lin

Person

Patents Grantslast 30 patents

Silicon carbide crystal

Silicon carbide crystal and method for manufacturing the same

Bonded substrate for epitaxial growth and method of forming the same

Epitaxial substrate and method for forming the same

Semiconductor device and method of forming the same

Epitaxial substrate and method of manufacturing the same

Patents Applicationslast 30 patents

SILICON CARBIDE CRYSTAL

SILICON CARBIDE CRYSTAL

SILICON CARBIDE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

BONDED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD OF FORMING THE SAME

EPITAXIAL SUBSTRATE AND METHOD FOR FORMING THE SAME

EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

WAFER SUSCEPTOR