Manfred Pfaffenlehner

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor component with edge termination region
- Patent number 11,848,377
- Issue date Dec 19, 2023
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method of processing a power semicon...
- Patent number 11,251,266
- Issue date Feb 15, 2022
- Infineon Technologies AG
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an edge termination region comprising a...
- Patent number 11,094,779
- Issue date Aug 17, 2021
- Infineon Technologies AG
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with edge termination region
- Patent number 11,018,249
- Issue date May 25, 2021
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 10,998,399
- Issue date May 4, 2021
- Infineon Technologies AG
- Alice Pei-Shan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device
- Patent number 10,957,764
- Issue date Mar 23, 2021
- Infineon Technologies AG
- Franz Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage termination structure of a power semiconductor device
- Patent number 10,600,862
- Issue date Mar 24, 2020
- Infineon Technologies Austria AG
- Erich Griebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having an undulated...
- Patent number 10,497,801
- Issue date Dec 3, 2019
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including undulated profile of net doping in a...
- Patent number 10,211,325
- Issue date Feb 19, 2019
- Infineon Technologies AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and integrated circuit
- Patent number 9,825,136
- Issue date Nov 21, 2017
- Infineon Technologies Austria AG
- Franz Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor diode and method of manufacturing a semiconductor diode
- Patent number 9,385,181
- Issue date Jul 5, 2016
- Infineon Technologies AG
- Hans Peter Felsl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having a passivation layer and production m...
- Patent number 9,177,829
- Issue date Nov 3, 2015
- Infineon Technologoies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a semiconductor including two differently doped...
- Patent number 8,828,810
- Issue date Sep 9, 2014
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method
- Patent number 8,367,532
- Issue date Feb 5, 2013
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method
- Patent number 8,252,671
- Issue date Aug 28, 2012
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Robust semiconductor device with an emitter zone and a field stop zone
- Patent number 8,159,022
- Issue date Apr 17, 2012
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor element
- Patent number 8,035,195
- Issue date Oct 11, 2011
- Infineon Technologies AG
- Franz Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method
- Patent number 8,003,502
- Issue date Aug 23, 2011
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor substrate including laser...
- Patent number 7,842,590
- Issue date Nov 30, 2010
- Infineon Technologies Austria AG
- Thomas Gutt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Soft switching semiconductor component with high robustness and low...
- Patent number 7,812,427
- Issue date Oct 12, 2010
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and method
- Patent number 7,709,887
- Issue date May 4, 2010
- Infineon Technologies Austria AG
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method suitable therefor
- Patent number 7,514,750
- Issue date Apr 7, 2009
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power IGBT with increased robustness
- Patent number 7,470,952
- Issue date Dec 30, 2008
- Infineon Technologies AG
- Holger Ruething
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CHIP ARRANGEMENT, CHIP PACKAGE, METHOD OF FORMING A CHIP ARRANGEMEN...
- Publication number 20230274996
- Publication date Aug 31, 2023
- INFINEON TECHNOLOGIES AG
- Stefan SCHWAB
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component with Edge Termination Region
- Publication number 20210257489
- Publication date Aug 19, 2021
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method
- Publication number 20200357883
- Publication date Nov 12, 2020
- INFINEON TECHNOLOGIES AG
- Manfred Pfaffenlehner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Method of Processing a Power Semicon...
- Publication number 20200266269
- Publication date Aug 20, 2020
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device
- Publication number 20200013854
- Publication date Jan 9, 2020
- INFINEON TECHNOLOGIES AG
- Alice Pei-Shan Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component with Edge Termination Region
- Publication number 20190237575
- Publication date Aug 1, 2019
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device Having an Undulated...
- Publication number 20190157435
- Publication date May 23, 2019
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Voltage Termination Structure of a Power Semiconductor Device
- Publication number 20180114830
- Publication date Apr 26, 2018
- Infineon Technologies Austria AG
- Erich Griebl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Manufacturing Therefor
- Publication number 20170317165
- Publication date Nov 2, 2017
- INFINEON TECHNOLOGIES AG
- Philip Christoph Brandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Semiconductor Device
- Publication number 20150303260
- Publication date Oct 22, 2015
- INFINEON TECHNOLOGIES AG
- Franz Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT AND INTEGRATED CIRCUIT
- Publication number 20150263106
- Publication date Sep 17, 2015
- Infineon Technologies Austria AG
- Franz Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including Undulated Profile of Net Doping in a...
- Publication number 20150214347
- Publication date Jul 30, 2015
- INFINEON TECHNOLOGIES AG
- Elmar Falck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Diode and Method of Manufacturing a Semiconductor Diode
- Publication number 20150206983
- Publication date Jul 23, 2015
- INFINEON TECHNOLOGIES AG
- Hans Peter Felsl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT HAVING A PASSIVATION LAYER AND PRODUCTION M...
- Publication number 20150076597
- Publication date Mar 19, 2015
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD
- Publication number 20120315747
- Publication date Dec 13, 2012
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ROBUST SEMICONDUCTOR DEVICE
- Publication number 20120202332
- Publication date Aug 9, 2012
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD
- Publication number 20110275202
- Publication date Nov 10, 2011
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor
- Publication number 20100078765
- Publication date Apr 1, 2010
- Infineon Technologies Austria AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE INCLUDING LASER...
- Publication number 20090267200
- Publication date Oct 29, 2009
- Infineon Technologies Austria AG
- Thomas Gutt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and Fabrication method
- Publication number 20090186462
- Publication date Jul 23, 2009
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Element
- Publication number 20080290466
- Publication date Nov 27, 2008
- Franz Josef Niedernostheide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Soft Switching Semiconductor Component with High Robustness and Low...
- Publication number 20070278472
- Publication date Dec 6, 2007
- INFINEON TECHNOLOGIES AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor component and method
- Publication number 20070152268
- Publication date Jul 5, 2007
- Frank Hille
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power IGBT with increased robustness
- Publication number 20070120181
- Publication date May 31, 2007
- Infineon Technologies AG
- Holger Ruething
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and fabrication method suitable therefor
- Publication number 20060081923
- Publication date Apr 20, 2006
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS

Manfred Pfaffenlehner

Person

Patents Grantslast 30 patents

Semiconductor component with edge termination region

Power semiconductor device and method of processing a power semicon...

Semiconductor device having an edge termination region comprising a...

Semiconductor component with edge termination region

Power semiconductor device

Vertical semiconductor device

High voltage termination structure of a power semiconductor device

Method of manufacturing a semiconductor device having an undulated...

Semiconductor device including undulated profile of net doping in a...

Semiconductor component and integrated circuit

Semiconductor diode and method of manufacturing a semiconductor diode

Semiconductor component having a passivation layer and production m...

Method of producing a semiconductor including two differently doped...

Semiconductor device and fabrication method

Semiconductor device and fabrication method

Robust semiconductor device with an emitter zone and a field stop zone

Semiconductor element

Semiconductor device and fabrication method

Method for manufacturing a semiconductor substrate including laser...

Soft switching semiconductor component with high robustness and low...

Semiconductor component and method

Semiconductor device and fabrication method suitable therefor

Power IGBT with increased robustness

Patents Applicationslast 30 patents

CHIP ARRANGEMENT, CHIP PACKAGE, METHOD OF FORMING A CHIP ARRANGEMEN...

Semiconductor Component with Edge Termination Region

Power Semiconductor Device and Method

Power Semiconductor Device and Method of Processing a Power Semicon...

Power Semiconductor Device

Semiconductor Component with Edge Termination Region

Method of Manufacturing a Semiconductor Device Having an Undulated...

High Voltage Termination Structure of a Power Semiconductor Device

Semiconductor Device and Manufacturing Therefor

Vertical Semiconductor Device

SEMICONDUCTOR COMPONENT AND INTEGRATED CIRCUIT

Semiconductor Device Including Undulated Profile of Net Doping in a...

Semiconductor Diode and Method of Manufacturing a Semiconductor Diode

SEMICONDUCTOR COMPONENT HAVING A PASSIVATION LAYER AND PRODUCTION M...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD

ROBUST SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND FABRICATION METHOD

Power semiconductor

METHOD FOR MANUFACTURING A SEMICONDUCTOR SUBSTRATE INCLUDING LASER...

Semiconductor device and Fabrication method

Semiconductor Element

Soft Switching Semiconductor Component with High Robustness and Low...

Semiconductor component and method

Power IGBT with increased robustness

Semiconductor device and fabrication method suitable therefor