Manfred Pippan

Person

Noetsch, AT

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with drain structure and metal drain electrode
- Patent number 11,652,137
- Issue date May 16, 2023
- Infineon Technologies Austria AG
- Enrique Vecino Vazquez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing a MOSFET
- Patent number 11,545,561
- Issue date Jan 3, 2023
- Infineon Technologies Austria AG
- Andreas Riegler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a superjunction semiconductor device
- Patent number 11,329,126
- Issue date May 10, 2022
- Infineon Technologies Austria AG
- Armin Tilke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing a MOSFET
- Patent number 10,903,341
- Issue date Jan 26, 2021
- Infineon Technologies Austria AG
- Andreas Riegler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with drain structure and metal drain electrode
- Patent number 10,784,339
- Issue date Sep 22, 2020
- Infineon Technologies Austria AG
- Enrique Vecino Vazquez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming recombination centers in a semiconductor device
- Patent number 10,347,491
- Issue date Jul 9, 2019
- Infineon Technologies Austria AG
- Wolfgang Jantscher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with drift zone and backside emitter and metho...
- Patent number 10,084,038
- Issue date Sep 25, 2018
- Infineon Technologies Austria AG
- Enrique Vecino Vazquez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor component
- Patent number 7,459,365
- Issue date Dec 2, 2008
- Infineon Technologies Austria AG
- Michael Rüb
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Electronic Circuit with a Transistor Device and a Biasing Circuit
- Publication number 20230075897
- Publication date Mar 9, 2023
- Hans Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Manufacturing a MOSFET
- Publication number 20210151584
- Publication date May 20, 2021
- Andreas Riegler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Drain Structure and Metal Drain Electrode
- Publication number 20200381511
- Publication date Dec 3, 2020
- Enrique Vecino Vazquez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Manufacturing a MOSFET
- Publication number 20190081158
- Publication date Mar 14, 2019
- Infineon Technologies Austria AG
- Andreas Riegler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Drain Structure and Metal Drain Electrode
- Publication number 20190035885
- Publication date Jan 31, 2019
- Infineon Technologies Austria AG
- Enrique Vecino Vazquez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Superjunction Semiconductor Device
- Publication number 20180374919
- Publication date Dec 27, 2018
- Infineon Technologies Austria AG
- Armin Tilke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming Recombination Centers in a Semiconductor Device
- Publication number 20180182629
- Publication date Jun 28, 2018
- Infineon Technologies Austria AG
- Wolfgang Jantscher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Drift Zone and Backside Emitter and Metho...
- Publication number 20180040689
- Publication date Feb 8, 2018
- Infineon Technologies Austria AG
- Enrique Vecino Vazquez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a semiconductor component
- Publication number 20070108513
- Publication date May 17, 2007
- Infineon Technologies Austria AG
- Michael Rub
- H01 - BASIC ELECTRIC ELEMENTS

Manfred Pippan

Person

Patents Grantslast 30 patents

Semiconductor device with drain structure and metal drain electrode

Methods for manufacturing a MOSFET

Method of manufacturing a superjunction semiconductor device

Methods for manufacturing a MOSFET

Semiconductor device with drain structure and metal drain electrode

Forming recombination centers in a semiconductor device

Semiconductor device with drift zone and backside emitter and metho...

Method for fabricating a semiconductor component

Patents Applicationslast 30 patents

Electronic Circuit with a Transistor Device and a Biasing Circuit

Methods for Manufacturing a MOSFET

Semiconductor Device with Drain Structure and Metal Drain Electrode

Methods for Manufacturing a MOSFET

Semiconductor Device with Drain Structure and Metal Drain Electrode

Method of Manufacturing a Superjunction Semiconductor Device

Forming Recombination Centers in a Semiconductor Device

Semiconductor Device with Drift Zone and Backside Emitter and Metho...

Method for fabricating a semiconductor component