Manfred Schiekofer

Person

Freising, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Controlling an epitaxial growth process in an epitaxial reactor
- Patent number 9,090,991
- Issue date Jul 28, 2015
- Texas Instruments Incorporated
- Manfred Schiekofer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of controlling an epitaxial growth process in an epitaxial r...
- Patent number 8,940,093
- Issue date Jan 27, 2015
- Texas Instruments Incorporated
- Manfred Schiekofer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming an electrical contact between a support wafer and...
- Patent number 8,932,942
- Issue date Jan 13, 2015
- Texas Instruments Deutschland GmbH
- Philipp Steinmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor
- Patent number 8,330,223
- Issue date Dec 11, 2012
- Texas Instruments Incorporated
- Klaus Schimpf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an integrated circuit with gate self-protecti...
- Patent number 8,294,218
- Issue date Oct 23, 2012
- Texas Instruments Incorporated
- Badih El-Kareh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of dopant diffusion from buried layers in bipolar integrate...
- Patent number 8,247,300
- Issue date Aug 21, 2012
- Texas Instruments Incorporated
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an integrated circuit with gate self-protecti...
- Patent number 7,772,057
- Issue date Aug 10, 2010
- Texas Instruments Incorporated
- Badih El-Kareh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an epitaxial silicon-germanium layer and an i...
- Patent number 7,217,322
- Issue date May 15, 2007
- Texas Instruments Incorporated
- Jeffrey A. Babcock
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of fabricating complementary bipolar transistors with SiGe b...
- Patent number 7,144,789
- Issue date Dec 5, 2006
- Texas Instruments Incorporated
- Badih El-Kareh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CONTROLLING AN EPITAXIAL GROWTH PROCESS IN AN EPITAXIAL REACTOR
- Publication number 20120035768
- Publication date Feb 9, 2012
- TEXAS INSTRUMENTS INCORPORATED
- Manfred Schiekofer
- C30 - CRYSTAL GROWTH
Information Patent Application
BIPOLAR TRANSISTOR
- Publication number 20110049517
- Publication date Mar 3, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Klaus SCHIMPF
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating an Integrated Circuit with Gate Self-Protecti...
- Publication number 20100308416
- Publication date Dec 9, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Badih EL-KAREH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROL OF DOPANT DIFFUSION FROM BURIED LAYERS IN BIPOLAR INTEGRATE...
- Publication number 20100279481
- Publication date Nov 4, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming an Electrical Contact Between a Support Wafer and...
- Publication number 20100244184
- Publication date Sep 30, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Philipp STEINMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CONTROLLING AN EPITAXIAL GROWTH PROCESS IN AN EPITAXIAL R...
- Publication number 20080251007
- Publication date Oct 16, 2008
- Texas Instruments Deutschland GmbH
- Manfred Schiekofer
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Fabricating an Integrated Circuit with Gate Self-Protecti...
- Publication number 20070057281
- Publication date Mar 15, 2007
- Badih El-Kareh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Control of dopant diffusion from buried layers in bipolar integrate...
- Publication number 20050250289
- Publication date Nov 10, 2005
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Control of phosphorus profile by carbon in-situ doping for high per...
- Publication number 20050118771
- Publication date Jun 2, 2005
- Hiroshi Yasuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating an epitaxial silicon-germanium layer and an i...
- Publication number 20050098093
- Publication date May 12, 2005
- Jeffrey A. Babcock
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of fabricating complementary bipolar transistors with SiGe b...
- Publication number 20050014341
- Publication date Jan 20, 2005
- Badih El-Kareh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Control of dopant diffusion from buried layers in bipolar integrate...
- Publication number 20030082882
- Publication date May 1, 2003
- Jeffrey A. Babcock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced and atmospheric pressure process capable epitaxial chamber
- Publication number 20020038689
- Publication date Apr 4, 2002
- Rudolf Bayer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Manfred Schiekofer

Person

Patents Grantslast 30 patents

Controlling an epitaxial growth process in an epitaxial reactor

Method of controlling an epitaxial growth process in an epitaxial r...

Method of forming an electrical contact between a support wafer and...

Bipolar transistor

Method of fabricating an integrated circuit with gate self-protecti...

Control of dopant diffusion from buried layers in bipolar integrate...

Method of fabricating an integrated circuit with gate self-protecti...

Method of fabricating an epitaxial silicon-germanium layer and an i...

Method of fabricating complementary bipolar transistors with SiGe b...

Patents Applicationslast 30 patents

CONTROLLING AN EPITAXIAL GROWTH PROCESS IN AN EPITAXIAL REACTOR

BIPOLAR TRANSISTOR

Method of Fabricating an Integrated Circuit with Gate Self-Protecti...

CONTROL OF DOPANT DIFFUSION FROM BURIED LAYERS IN BIPOLAR INTEGRATE...

Method of Forming an Electrical Contact Between a Support Wafer and...

METHOD OF CONTROLLING AN EPITAXIAL GROWTH PROCESS IN AN EPITAXIAL R...

Method of Fabricating an Integrated Circuit with Gate Self-Protecti...

Control of dopant diffusion from buried layers in bipolar integrate...

Control of phosphorus profile by carbon in-situ doping for high per...

Method of fabricating an epitaxial silicon-germanium layer and an i...

Method of fabricating complementary bipolar transistors with SiGe b...

Control of dopant diffusion from buried layers in bipolar integrate...

Reduced and atmospheric pressure process capable epitaxial chamber