Mao-Song Tseng

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor and manufacturing method thereof
- Patent number 9,153,675
- Issue date Oct 6, 2015
- MOSEL VITALEC INC.
- Chien-Ping Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating trench metal-oxide-semiconductor field effec...
- Patent number 7,615,442
- Issue date Nov 10, 2009
- Mosel Vitelic Inc
- Hsin-Huang Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hard mask structure for deep trenched super-junction device
- Patent number 7,402,522
- Issue date Jul 22, 2008
- Mosel Vitelic Inc
- Hsing Huang Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing trench MOSFET
- Patent number 7,271,048
- Issue date Sep 18, 2007
- Mosel Vitelic, Inc.
- Chien-Ping Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMOS device having a trenched bus structure
- Patent number 7,265,024
- Issue date Sep 4, 2007
- Mosel Vitelic, Inc.
- Hsin-Huang Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing process and structure of integrated circuit
- Patent number 7,205,196
- Issue date Apr 17, 2007
- Mosel Vitelic, Inc.
- Hsin-Huang Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination structure of DMOS device
- Patent number 7,087,958
- Issue date Aug 8, 2006
- Mosel Vitelic, Inc.
- Chiao-Shun Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DMOS device having a trenched bus structure
- Patent number 7,084,457
- Issue date Aug 1, 2006
- Mosel Vitelic, Inc.
- Hsin-Huang Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination structure for trench DMOS device and method of making t...
- Patent number 6,998,315
- Issue date Feb 14, 2006
- Mosel Vitelic, Inc.
- Hsin-Huang Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination structure of DMOS device and method of forming the same
- Patent number 6,989,306
- Issue date Jan 24, 2006
- Mosel Vitelic, Inc.
- Chiao-Shun Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination structure for trench DMOS device and method of making t...
- Patent number 6,855,986
- Issue date Feb 15, 2005
- Mosel Vitelic, Inc.
- Hsin-Huang Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench filling process for preventing formation of voids in trench
- Patent number 6,828,196
- Issue date Dec 7, 2004
- Mosel Vitelec, Inc.
- Pei-Feng Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming dual oxide layers at bottom of trench
- Patent number 6,821,913
- Issue date Nov 23, 2004
- Mosel Vitelic, Inc.
- Chiao-Shun Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing boron outgassing at trench power IC's ox...
- Patent number 6,680,261
- Issue date Jan 20, 2004
- Mosel Vitelic, Inc.
- Jen-Te Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with highly uniform threshold voltage
- Patent number 6,677,223
- Issue date Jan 13, 2004
- Mosel Vitelic, Inc.
- Chiao-Shun Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating a DMOS transistor
- Patent number 6,660,592
- Issue date Dec 9, 2003
- Mosel Vitelic, Inc.
- Chiao-Shun Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory process using polysilicon spacers
- Patent number 6,365,455
- Issue date Apr 2, 2002
- Mosel Vitelic, Inc.
- Wen-Doe Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving the dimple phenomena of a polysilicon film dep...
- Patent number 6,335,260
- Issue date Jan 1, 2002
- Mosel Vitelic Inc
- Mao-song Tseng
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Self-aligned contact for trench DMOS transistors
- Patent number 6,184,092
- Issue date Feb 6, 2001
- Mosel Vitelic Inc
- Mao-song Tseng
Information Patent Grant
Method for formating device on wafer without peeling
- Patent number 5,930,593
- Issue date Jul 27, 1999
- Mosel Vitelic Inc.
- Cheng-Hsun Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature dry process for stripping photoresist after high do...
- Patent number 5,811,358
- Issue date Sep 22, 1998
- Mosel Vitelic Inc.
- Mao-Sung Tseng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER SEMICONDUCTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20140327038
- Publication date Nov 6, 2014
- Mosel Vitalec Inc.
- Chien-Ping Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabicating trench metal-oxide-semiconductor field effect...
- Publication number 20070134882
- Publication date Jun 14, 2007
- Mosel Vitelic Inc.
- Hsin-Huang Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hard mask structure for deep trenched super-junction device
- Publication number 20060276045
- Publication date Dec 7, 2006
- Mosel Vitelic Inc.
- Hsing Huang Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DMOS device having a trenched bus structure
- Publication number 20060186465
- Publication date Aug 24, 2006
- MOSEL VITELIC, INC.
- Hsin-Huang Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing process and structure of integrated circuit
- Publication number 20060046389
- Publication date Mar 2, 2006
- MOSEL VITELIC, INC.
- Hsin-Huang Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing trench MOSFET
- Publication number 20060046397
- Publication date Mar 2, 2006
- MOSEL VITELIC, INC.
- Chien-Ping Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Termination structure for trench DMOS device and method of making t...
- Publication number 20050199952
- Publication date Sep 15, 2005
- MOSEL VITELIC, INC.
- Hsin-Huang Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Termination structure of DMOS device and method of forming the same
- Publication number 20050009277
- Publication date Jan 13, 2005
- MOSEL VITELIC, INC.
- Chiao-Shun Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Termination structure for trench DMOS device and method of making t...
- Publication number 20040222458
- Publication date Nov 11, 2004
- MOSEL VITELIC, INC.
- Hsin-Huang Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DMOS device having a trenched bus structure
- Publication number 20040217416
- Publication date Nov 4, 2004
- MOSEL VITELIC, INC.
- Hsin-Huang Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Termination structure of DMOS device
- Publication number 20040195620
- Publication date Oct 7, 2004
- MOSEL VITELIC, INC.
- Chiao-Shun Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench filling process for preventing formation of voids in trench
- Publication number 20040166635
- Publication date Aug 26, 2004
- MOSEL VITELIC, INC.
- Pei-Feng Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabricating a DMOS transistor
- Publication number 20030096485
- Publication date May 22, 2003
- MOSEL VITELIC, INC.
- Chiao-Shun Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming dual oxide layers at bottom of trench
- Publication number 20030068901
- Publication date Apr 10, 2003
- MOSEL VITELIC, INC.
- Chiao-Shun Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor with highly uniform threshold voltage
- Publication number 20030060033
- Publication date Mar 27, 2003
- MOSEL VITELIC, INC. A Taiwanese Corporation
- Chiao-Shun Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of reducing boron outgassing at trench power IC's oxidation...
- Publication number 20030054665
- Publication date Mar 20, 2003
- MOSEL VITELIC, INC.
- Jen-Te Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for forming gate oxide layer
- Publication number 20020006704
- Publication date Jan 17, 2002
- Mosel Vitelic Inc.
- Mao-Song Tseng
- H01 - BASIC ELECTRIC ELEMENTS

Mao-Song Tseng

Person

Patents Grantslast 30 patents

Power semiconductor and manufacturing method thereof

Method for fabricating trench metal-oxide-semiconductor field effec...

Hard mask structure for deep trenched super-junction device

Method for manufacturing trench MOSFET

DMOS device having a trenched bus structure

Manufacturing process and structure of integrated circuit

Termination structure of DMOS device

DMOS device having a trenched bus structure

Termination structure for trench DMOS device and method of making t...

Termination structure of DMOS device and method of forming the same

Termination structure for trench DMOS device and method of making t...

Trench filling process for preventing formation of voids in trench

Method for forming dual oxide layers at bottom of trench

Method of reducing boron outgassing at trench power IC&#x00027;s ox...

Transistor with highly uniform threshold voltage

Fabricating a DMOS transistor

Flash memory process using polysilicon spacers

Method for improving the dimple phenomena of a polysilicon film dep...

Self-aligned contact for trench DMOS transistors

Method for formating device on wafer without peeling

Low temperature dry process for stripping photoresist after high do...

Patents Applicationslast 30 patents

POWER SEMICONDUCTOR AND MANUFACTURING METHOD THEREOF

Method for fabicating trench metal-oxide-semiconductor field effect...

Hard mask structure for deep trenched super-junction device

DMOS device having a trenched bus structure

Manufacturing process and structure of integrated circuit

Method for manufacturing trench MOSFET

Termination structure for trench DMOS device and method of making t...

Termination structure of DMOS device and method of forming the same

Termination structure for trench DMOS device and method of making t...

DMOS device having a trenched bus structure

Termination structure of DMOS device

Trench filling process for preventing formation of voids in trench

Fabricating a DMOS transistor

Method for forming dual oxide layers at bottom of trench

Transistor with highly uniform threshold voltage

Method of reducing boron outgassing at trench power IC's oxidation...

Process for forming gate oxide layer

Method of reducing boron outgassing at trench power IC's ox...