Maosheng HAO

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
Substrate used for III-V-nitride growth and manufacturing method th...
- Patent number 10,230,018
- Issue date Mar 12, 2019
- CHIP FOUNDATION TECHNOLOGY LTD.
- Maosheng Hao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SUBSTRATE USED FOR GROUP III-V NITRIDE GROWTH AND METHOD FOR PREPAR...
- Publication number 20160359083
- Publication date Dec 8, 2016
- EPILIGHT TECHNOLOGY CO., LTD
- Maosheng HAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V-NITRIDE SEMICONDUCTOR EPITAXIAL WAFER, DEVICE CONTAINING EPIT...
- Publication number 20160359082
- Publication date Dec 8, 2016
- CHIP FOUNDATION TECHNOLOGY LTD.
- Maosheng HAO
- H01 - BASIC ELECTRIC ELEMENTS