Marco Bellini

Person

Schlieren, CH

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide power device with MOS structure and stressor
- Patent number 11,302,811
- Issue date Apr 12, 2022
- Hitachi Energy Switzerland AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor module
- Patent number 11,107,740
- Issue date Aug 31, 2021
- ABB Power Grids Switzerland AG
- Jürgen Schuderer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide superjunction power semiconductor device and method...
- Patent number 11,031,473
- Issue date Jun 8, 2021
- ABB Power Grids Switzerland AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with floating field ring termination
- Patent number 10,566,463
- Issue date Feb 18, 2020
- ABB SCHWEIZ
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase control thyristor
- Patent number 10,355,117
- Issue date Jul 16, 2019
- ABB Schweiz AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thyristor with improved plasma spreading
- Patent number 10,170,557
- Issue date Jan 1, 2019
- ABB Schweiz AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and method for manufacturing such a powe...
- Patent number 8,829,563
- Issue date Sep 9, 2014
- ABB Technology AG
- Munaf Rahimo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20240186377
- Publication date Jun 6, 2024
- Hitachi Energy Ltd
- Yulieth Arango
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A POWER SEMICON...
- Publication number 20240170566
- Publication date May 23, 2024
- Hitachi Energy Ltd
- Andrei MIHAILA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND A METHOD FOR PRODUCING A POWER SEMIC...
- Publication number 20240096937
- Publication date Mar 21, 2024
- Hitachi Energy Switzerland AG
- Marco BELLINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH AN INSULATED TRENCH GATE ELECTRODE
- Publication number 20240021670
- Publication date Jan 18, 2024
- Hitachi Energy Switzerland AG
- Marco BELLINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND POWER MODULE
- Publication number 20240021542
- Publication date Jan 18, 2024
- Hitachi Energy Switzerland AG
- Marco BELLINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND OPERATING METHOD
- Publication number 20230369408
- Publication date Nov 16, 2023
- Hitachi Energy Switzerland AG
- Marco BELLINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SiC POWER SEMICONDUCTOR DEVICE
- Publication number 20230327014
- Publication date Oct 12, 2023
- Hitachi Energy Switzerland AG
- Marco BELLINI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Planar SiC MOSFET with Retrograde Implanted Channel
- Publication number 20220320290
- Publication date Oct 6, 2022
- Hitachi Energy Switzerland AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Transistor Device
- Publication number 20220278205
- Publication date Sep 1, 2022
- Hitachi Energy Switzerland AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Power Device with MOS Structure and Stressor
- Publication number 20220045213
- Publication date Feb 10, 2022
- ABB Power Grids Switzerland AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUPERJUNCTION POWER SEMICONDUCTOR DEVICE AND METHOD...
- Publication number 20200006496
- Publication date Jan 2, 2020
- ABB Schweiz AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE WITH FLOATING FIELD RING TERMINATION
- Publication number 20190288124
- Publication date Sep 19, 2019
- ABB Schweiz AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THYRISTOR WITH IMPROVED PLASMA SPREADING
- Publication number 20180090572
- Publication date Mar 29, 2018
- ABB Schweiz AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR MODULE
- Publication number 20180040526
- Publication date Feb 8, 2018
- ABB Schweiz AG
- Jürgen Schuderer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CONTROL THYRISTOR
- Publication number 20170243966
- Publication date Aug 24, 2017
- ABB Schweiz AG
- Marco Bellini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A POWE...
- Publication number 20130334566
- Publication date Dec 19, 2013
- ABB TECHNOLOGY AG
- Munaf RAHIMO
- H01 - BASIC ELECTRIC ELEMENTS

Marco Bellini

Person

Patents Grantslast 30 patents

Silicon carbide power device with MOS structure and stressor

Power semiconductor module

Silicon carbide superjunction power semiconductor device and method...

Power semiconductor device with floating field ring termination

Phase control thyristor

Thyristor with improved plasma spreading

Power semiconductor device and method for manufacturing such a powe...

Patents Applicationslast 30 patents

POWER SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A POWER SEMICON...

POWER SEMICONDUCTOR DEVICE AND A METHOD FOR PRODUCING A POWER SEMIC...

POWER SEMICONDUCTOR DEVICE WITH AN INSULATED TRENCH GATE ELECTRODE

POWER SEMICONDUCTOR DEVICE AND POWER MODULE

POWER SEMICONDUCTOR DEVICE AND OPERATING METHOD

TRENCH SiC POWER SEMICONDUCTOR DEVICE

Planar SiC MOSFET with Retrograde Implanted Channel

Silicon Carbide Transistor Device

Silicon Carbide Power Device with MOS Structure and Stressor

SILICON CARBIDE SUPERJUNCTION POWER SEMICONDUCTOR DEVICE AND METHOD...

POWER SEMICONDUCTOR DEVICE WITH FLOATING FIELD RING TERMINATION

THYRISTOR WITH IMPROVED PLASMA SPREADING

POWER SEMICONDUCTOR MODULE

PHASE CONTROL THYRISTOR

POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A POWE...