Marco Cornara

Person

Galliate, IT

People

Patents Grantslast 30 patents

Information Patent Grant
Production of high precipitate density wafers by activation of inac...
- Patent number 9,129,919
- Issue date Sep 8, 2015
- SunEdison Semiconductor Limited
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for forming low defect density, ideal oxygen precipitating...
- Patent number 7,442,253
- Issue date Oct 28, 2008
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect density, ideal oxygen precipitating silicon
- Patent number 7,229,693
- Issue date Jun 12, 2007
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing low defect density, ideal oxygen precipitatin...
- Patent number 6,896,728
- Issue date May 24, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-...
- Patent number 6,849,119
- Issue date Feb 1, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ideal oxygen precipitating silicon wafer having an asymmetrical vac...
- Patent number 6,586,068
- Issue date Jul 1, 2003
- MEMC Electronic Materials, Inc.
- Robert Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing low defect density, ideal oxygen precipitatin...
- Patent number 6,555,194
- Issue date Apr 29, 2003
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-...
- Patent number 6,537,368
- Issue date Mar 25, 2003
- MEMC Electronic Materials SpA
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-...
- Patent number 6,306,733
- Issue date Oct 23, 2001
- MEMC Electronic Materials, SpA
- Robert Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-...
- Patent number 6,204,152
- Issue date Mar 20, 2001
- MEMC Electronic Materials, SpA
- Robert Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect density, ideal oxygen precipitating silicon
- Patent number 6,190,631
- Issue date Feb 20, 2001
- MEMC Electronic Materials, Inc.
- Robert A. Falster
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ideal Oxygen precipitating silicon wafers and oxygen out-diffusion-...
- Patent number 6,180,220
- Issue date Jan 30, 2001
- MEMC Electronic Materials, Inc.
- Robert Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-...
- Patent number 5,994,761
- Issue date Nov 30, 1999
- MEMC Electronic Materials SpA
- Robert Falster
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PRODUCTION OF HIGH PRECIPITATE DENSITY WAFERS BY ACTIVATION OF INAC...
- Publication number 20140141537
- Publication date May 22, 2014
- SUNEDISON, INC.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR FORMING LOW DEFECT DENSITY, IDEAL OXYGEN PRECIPITATING...
- Publication number 20070224783
- Publication date Sep 27, 2007
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Low defect density, ideal oxygen precipitating silicon
- Publication number 20050170610
- Publication date Aug 4, 2005
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing low defect density, ideal oxygen precipitatin...
- Publication number 20040025782
- Publication date Feb 12, 2004
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- C30 - CRYSTAL GROWTH
Information Patent Application
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-...
- Publication number 20030196586
- Publication date Oct 23, 2003
- MEMC Electronic Materials, Inc.
- Robert J. Falster
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-...
- Publication number 20020026893
- Publication date Mar 7, 2002
- Robert Falster
- H01 - BASIC ELECTRIC ELEMENTS

Marco Cornara

Person

Patents Grantslast 30 patents

Production of high precipitate density wafers by activation of inac...

Process for forming low defect density, ideal oxygen precipitating...

Low defect density, ideal oxygen precipitating silicon

Process for producing low defect density, ideal oxygen precipitatin...

Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-...

Ideal oxygen precipitating silicon wafer having an asymmetrical vac...

Process for producing low defect density, ideal oxygen precipitatin...

Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-...

Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-...

Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-...

Low defect density, ideal oxygen precipitating silicon

Ideal Oxygen precipitating silicon wafers and oxygen out-diffusion-...

Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-...

Patents Applicationslast 30 patents

PRODUCTION OF HIGH PRECIPITATE DENSITY WAFERS BY ACTIVATION OF INAC...

PROCESS FOR FORMING LOW DEFECT DENSITY, IDEAL OXYGEN PRECIPITATING...

Low defect density, ideal oxygen precipitating silicon

Process for producing low defect density, ideal oxygen precipitatin...

Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-...

Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-...