Marco Racanelli

Person

Santa Ana, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure having porous semiconductor segment for RF...
- Patent number 11,195,920
- Issue date Dec 7, 2021
- Newport Fab, LLC
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having porous semiconductor layer for RF de...
- Patent number 11,164,740
- Issue date Nov 2, 2021
- Newport Fab, LLC
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance SiGe heterojunction bipolar transistors built on t...
- Patent number 10,991,631
- Issue date Apr 27, 2021
- Newport Fab, LLC
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance SiGe heterojunction bipolar transistors built on t...
- Patent number 10,622,262
- Issue date Apr 14, 2020
- Newport Fab. LLC
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk CMOS RF switch with reduced parasitic capacitance
- Patent number 10,177,045
- Issue date Jan 8, 2019
- Newport Fab, LLC
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk CMOS RF switch with reduced parasitic capacitance
- Patent number 10,177,044
- Issue date Jan 8, 2019
- Newport Fab, LLC
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for mitigating substrate parasitics in bulk hi...
- Patent number 9,941,353
- Issue date Apr 10, 2018
- Newport Fab, LLC
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated through silicon via and isolated deep silicon via having t...
- Patent number 9,673,081
- Issue date Jun 6, 2017
- Newport Fab, LLC
- Hadi Jebory
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor on insulator (SOI) structure with more predictable ju...
- Patent number 9,412,758
- Issue date Aug 9, 2016
- Newport Fab, LLC
- Robert L. Zwingman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep N wells in triple well structures
- Patent number 9,136,157
- Issue date Sep 15, 2015
- Newport Fab, LLC
- Arjun Kar-Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming deep silicon via for grounding of circuits and d...
- Patent number 9,105,681
- Issue date Aug 11, 2015
- Newport Fab, LLC
- Volker Blaschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep silicon via for grounding of circuits and devices, emitter bal...
- Patent number 8,598,713
- Issue date Dec 3, 2013
- Newport Fab, LLC
- Volker Blaschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a backside through-wafer via in a processed...
- Patent number 8,212,331
- Issue date Jul 3, 2012
- Newport Fab, LLC
- Arjun Kar-Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating a top conductive layer in a semiconductor die
- Patent number 7,897,484
- Issue date Mar 1, 2011
- Newport Fab, LLC
- Arjun Kar-Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor on insulator (SOI) switching circuit
- Patent number 7,745,886
- Issue date Jun 29, 2010
- Newport Fab, LLC
- Robert L. Zwingman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a frontside through-wafer via in a processed...
- Patent number 7,704,874
- Issue date Apr 27, 2010
- Newport Fab, LLC
- Arjun Kar-Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a top conductive layer in a semiconductor di...
- Patent number 7,589,009
- Issue date Sep 15, 2009
- Newport Fab, LLC
- Arjun Kar-Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NPN transistor having reduced extrinsic base resistance and improve...
- Patent number 7,235,861
- Issue date Jun 26, 2007
- Newport Fab, LLC
- David Howard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low cost fabrication of high resistivity resistors
- Patent number 7,217,613
- Issue date May 15, 2007
- Newport Fab, LLC
- Marco Racanelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite ground shield for passive components in a semiconductor die
- Patent number 7,154,161
- Issue date Dec 26, 2006
- Newport Fab, LLC
- Volker A. Blaschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a high density composite MIM capacitor with...
- Patent number 7,078,310
- Issue date Jul 18, 2006
- Newport Fab, LLC
- Arjun Kar-Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite series resistor having reduced temperature sensitivity in...
- Patent number 7,078,786
- Issue date Jul 18, 2006
- Newport Fab, LLC dba Jazz Semiconductor
- Marco Racanelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NPN transistor having reduced extrinsic base resistance and improve...
- Patent number 7,064,361
- Issue date Jun 20, 2006
- Newport Fab. LLC
- David Howard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep N wells in triple well structures and method for fabricating same
- Patent number 7,052,966
- Issue date May 30, 2006
- Newport Fab, LLC
- Arjun Kar-Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a self-aligned bipolar transistor
- Patent number 7,041,564
- Issue date May 9, 2006
- Newport Fab, LLC
- Amol Kalburge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a high density composite MIM capacitor with...
- Patent number 7,041,569
- Issue date May 9, 2006
- Newport Fab, LLC
- Arjun Kar-Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-implant high performance varactor and method for manufacturi...
- Patent number 6,995,068
- Issue date Feb 7, 2006
- Newport Fab, LLC
- Marco Racanelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing extrinsic base resistance in an NPN transistor
- Patent number 6,893,931
- Issue date May 17, 2005
- Newport Fab, LLC
- David Howard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High gain bipolar transistor
- Patent number 6,867,477
- Issue date Mar 15, 2005
- Newport Fab, LLC
- Jie Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing extrinsic base resistance and improving manufac...
- Patent number 6,830,982
- Issue date Dec 14, 2004
- Newport Fab, LLC
- David Howard
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for Forming a Semiconductor Structure Having a Porous Semico...
- Publication number 20210375618
- Publication date Dec 2, 2021
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Having Porous Semiconductor Layer for RF De...
- Publication number 20210111019
- Publication date Apr 15, 2021
- Newport Fab, LLC dba Jazz Semiconductor.
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Having Porous Semiconductor Segment for RF...
- Publication number 20210111249
- Publication date Apr 15, 2021
- Newport Fab, LLC dba Jazz Semiconductor.
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Performance SiGe Heterojunction Bipolar Transistors Built On T...
- Publication number 20190109054
- Publication date Apr 11, 2019
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE SiGe HETEROJUNCTION BIPOLAR TRANSISTORS BUILT ON T...
- Publication number 20190109055
- Publication date Apr 11, 2019
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bulk CMOS RF Switch With Reduced Parasitic Capacitance
- Publication number 20180323114
- Publication date Nov 8, 2018
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bulk CMOS RF Switch With Reduced Parasitic Capacitance
- Publication number 20180323115
- Publication date Nov 8, 2018
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Edward J. Preisler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for Mitigating Substrate Parasitics in Bulk Hi...
- Publication number 20170338305
- Publication date Nov 23, 2017
- Newport Fab, LLC dba Jazz Semiconductor.
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Wafer Backside Metallization With Improved Backside M...
- Publication number 20160379926
- Publication date Dec 29, 2016
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- David J. Howard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolated Through Silicon Via and Isolated Deep Silicon Via Having T...
- Publication number 20130313682
- Publication date Nov 28, 2013
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Hadi Jebory
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming deep silicon via for grounding of circuits and d...
- Publication number 20130109176
- Publication date May 2, 2013
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Volker Blaschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep silicon via for grounding of circuits and devices, emitter bal...
- Publication number 20110018109
- Publication date Jan 27, 2011
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Volker Blaschke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabricating a Top Conductive Layer in a Semiconductor Die
- Publication number 20090298285
- Publication date Dec 3, 2009
- Newport Fab, LLC dba Jazz Semiconductor.
- Arjun Kar-Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor on insulator (SOI) structure and method for fabrication
- Publication number 20090146210
- Publication date Jun 11, 2009
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Robert L. Zwingman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor on insulator (SOI) switching circuit
- Publication number 20090149213
- Publication date Jun 11, 2009
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Robert L. Zwingman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep N wells in triple well structures and method for fabricating same
- Publication number 20040201065
- Publication date Oct 14, 2004
- Newport Fab,LLC dba Jazz Semiconductor
- Arjun Kar-Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a self-aligned bipolar transistor with plana...
- Publication number 20040140530
- Publication date Jul 22, 2004
- Amol M. Kalburge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIFET VOLTAGE CONTROLLED OSCILLATOR
- Publication number 20040119546
- Publication date Jun 24, 2004
- Newport Fab, LLC dba Jazz Semiconductor.
- Pingxi Ma
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
High gain bipolar transistor
- Publication number 20040089877
- Publication date May 13, 2004
- Newport Fab, LLC dba Jazz Semiconductor.
- Jie Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Band gap compensated HBT
- Publication number 20030146448
- Publication date Aug 7, 2003
- Conexant Systems, Inc.
- Greg D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR ELIMINATING COLLECTOR-BASE BAND GAP DISCON...
- Publication number 20030146449
- Publication date Aug 7, 2003
- Conexant Systems, Inc.
- Greg D. U'Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low cost fabrication of high resistivity resistors
- Publication number 20020151148
- Publication date Oct 17, 2002
- Conexant Systems, Inc.
- Marco Racanelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced base resistance in a bipolar transistor
- Publication number 20020117734
- Publication date Aug 29, 2002
- Conexant Systems, Inc.
- Marco Racanelli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for reducing base resistance in a bipolar transistor
- Publication number 20020117733
- Publication date Aug 29, 2002
- Conexant Systems, Inc.
- Marco Racanelli
- H01 - BASIC ELECTRIC ELEMENTS

Marco Racanelli

Person

Patents Grantslast 30 patents

Semiconductor structure having porous semiconductor segment for RF...

Semiconductor structure having porous semiconductor layer for RF de...

High performance SiGe heterojunction bipolar transistors built on t...

High performance SiGe heterojunction bipolar transistors built on t...

Bulk CMOS RF switch with reduced parasitic capacitance

Bulk CMOS RF switch with reduced parasitic capacitance

Structure and method for mitigating substrate parasitics in bulk hi...

Isolated through silicon via and isolated deep silicon via having t...

Semiconductor on insulator (SOI) structure with more predictable ju...

Deep N wells in triple well structures

Method for forming deep silicon via for grounding of circuits and d...

Deep silicon via for grounding of circuits and devices, emitter bal...

Method for fabricating a backside through-wafer via in a processed...

Fabricating a top conductive layer in a semiconductor die

Semiconductor on insulator (SOI) switching circuit

Method for fabricating a frontside through-wafer via in a processed...

Method for fabricating a top conductive layer in a semiconductor di...

NPN transistor having reduced extrinsic base resistance and improve...

Low cost fabrication of high resistivity resistors

Composite ground shield for passive components in a semiconductor die

Method for fabricating a high density composite MIM capacitor with...

Composite series resistor having reduced temperature sensitivity in...

NPN transistor having reduced extrinsic base resistance and improve...

Deep N wells in triple well structures and method for fabricating same

Method for fabricating a self-aligned bipolar transistor

Method for fabricating a high density composite MIM capacitor with...

Double-implant high performance varactor and method for manufacturi...

Reducing extrinsic base resistance in an NPN transistor

High gain bipolar transistor

Method for reducing extrinsic base resistance and improving manufac...

Patents Applicationslast 30 patents

Method for Forming a Semiconductor Structure Having a Porous Semico...

Semiconductor Structure Having Porous Semiconductor Layer for RF De...

Semiconductor Structure Having Porous Semiconductor Segment for RF...

High Performance SiGe Heterojunction Bipolar Transistors Built On T...

HIGH PERFORMANCE SiGe HETEROJUNCTION BIPOLAR TRANSISTORS BUILT ON T...

Bulk CMOS RF Switch With Reduced Parasitic Capacitance

Bulk CMOS RF Switch With Reduced Parasitic Capacitance

Structure and Method for Mitigating Substrate Parasitics in Bulk Hi...

Semiconductor Wafer Backside Metallization With Improved Backside M...

Isolated Through Silicon Via and Isolated Deep Silicon Via Having T...

Method for forming deep silicon via for grounding of circuits and d...

Deep silicon via for grounding of circuits and devices, emitter bal...

Fabricating a Top Conductive Layer in a Semiconductor Die

Semiconductor on insulator (SOI) structure and method for fabrication

Semiconductor on insulator (SOI) switching circuit

Deep N wells in triple well structures and method for fabricating same

Method for fabricating a self-aligned bipolar transistor with plana...

BIFET VOLTAGE CONTROLLED OSCILLATOR

High gain bipolar transistor

Band gap compensated HBT

METHOD AND STRUCTURE FOR ELIMINATING COLLECTOR-BASE BAND GAP DISCON...

Low cost fabrication of high resistivity resistors

Reduced base resistance in a bipolar transistor

Method for reducing base resistance in a bipolar transistor