Marek K. Pabisz

Person

Langhorne, PA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Second Schottky contact metal layer to improve GaN schottky diode p...
- Patent number 8,823,013
- Issue date Sep 2, 2014
- Power Integrations, Inc.
- Ting Gang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Second contact schottky metal layer to improve GaN schottky diode p...
- Patent number 8,629,525
- Issue date Jan 14, 2014
- Power Integrations, Inc.
- Ting Gang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Second Schottky contact metal layer to improve GaN Schottky diode p...
- Patent number 8,026,568
- Issue date Sep 27, 2011
- Velox Semiconductor Corporation
- Ting Gang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride semiconductor device
- Patent number 7,863,172
- Issue date Jan 4, 2011
- Power Integrations, Inc.
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride semiconductor device
- Patent number 7,436,039
- Issue date Oct 14, 2008
- Velox Semiconductor Corporation
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Second Schottky Contact Metal Layer to Improve GaN Schottky Diode P...
- Publication number 20140110721
- Publication date Apr 24, 2014
- Power Integrations, Inc.
- Ting Gang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Second contact schottky metal layer to improve GaN schottky diode p...
- Publication number 20120043551
- Publication date Feb 23, 2012
- Power Integrations, Inc.
- Ting Gang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride semiconductor
- Publication number 20110101371
- Publication date May 5, 2011
- Power Integrations, Inc.
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Package for Semiconductor Devices
- Publication number 20100140627
- Publication date Jun 10, 2010
- Bryan S. Shelton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Semiconductor Device
- Publication number 20090035925
- Publication date Feb 5, 2009
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Second Schottky contact metal layer to improve GaN Schottky diode p...
- Publication number 20070108547
- Publication date May 17, 2007
- Velox Semiconductor Corporation
- Ting Gang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical structure semiconductor devices and method of fabricating...
- Publication number 20070093037
- Publication date Apr 26, 2007
- Velox Semicondutor Corporation
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Package for gallium nitride semiconductor devices
- Publication number 20060151868
- Publication date Jul 13, 2006
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium nitride semiconductor device
- Publication number 20060145283
- Publication date Jul 6, 2006
- TingGang Zhu
- H01 - BASIC ELECTRIC ELEMENTS

Marek K. Pabisz

Person

Patents Grantslast 30 patents

Second Schottky contact metal layer to improve GaN schottky diode p...

Second contact schottky metal layer to improve GaN schottky diode p...

Second Schottky contact metal layer to improve GaN Schottky diode p...

Gallium nitride semiconductor device

Gallium nitride semiconductor device

Patents Applicationslast 30 patents

Second Schottky Contact Metal Layer to Improve GaN Schottky Diode P...

Second contact schottky metal layer to improve GaN schottky diode p...

Gallium nitride semiconductor

Package for Semiconductor Devices

Gallium Nitride Semiconductor Device

Second Schottky contact metal layer to improve GaN Schottky diode p...

Vertical structure semiconductor devices and method of fabricating...

Package for gallium nitride semiconductor devices

Gallium nitride semiconductor device