Mark Brady

Person

Carrboro, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
One hundred millimeter SiC crystal grown on off-axis seed
- Patent number 8,980,445
- Issue date Mar 17, 2015
- Cree, Inc.
- Robert T. Leonard
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low micropipe 100 mm silicon carbide wafer
- Patent number 8,866,159
- Issue date Oct 21, 2014
- Cree, Inc.
- Adrian Powell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low 1C screw dislocation 3 inch silicon carbide wafer
- Patent number 8,785,946
- Issue date Jul 22, 2014
- Cree, Inc.
- Adrian Powell
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Low 1C screw dislocation 3 inch silicon carbide wafer
- Patent number 8,624,267
- Issue date Jan 7, 2014
- Cree, Inc.
- Adrian Powell
Information Patent Grant
Low micropipe 100 mm silicon carbide wafer
- Patent number 8,618,552
- Issue date Dec 31, 2013
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Low 1C screw dislocation 3 inch silicon carbide wafer
- Patent number 8,384,090
- Issue date Feb 26, 2013
- Cree, Inc.
- Adrian Powell
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
One hundred millimeter single crystal silicon carbide wafer
- Patent number 8,147,991
- Issue date Apr 3, 2012
- Cree, Inc.
- Jason Ronald Jenny
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
One hundred millimeter high purity semi-insulating single crystal s...
- Patent number 7,601,441
- Issue date Oct 13, 2009
- Cree, Inc.
- Jason Ronald Jenny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing high quality large size silicon carbide crystals
- Patent number 7,563,321
- Issue date Jul 21, 2009
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Grant
Seeded single crystal silicon carbide growth and resulting crystals
- Patent number 7,316,747
- Issue date Jan 8, 2008
- Cree, Inc.
- Jason Ronald Jenny
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low micropipe 100 mm silicon carbide wafer
- Patent number 7,314,521
- Issue date Jan 1, 2008
- Cree, Inc.
- Adrian Powell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low 1c screw dislocation 3 inch silicon carbide wafer
- Patent number 7,314,520
- Issue date Jan 1, 2008
- Cree, Inc.
- Adrian Powell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low basal plane dislocation bulk grown SiC wafers
- Patent number 7,294,324
- Issue date Nov 13, 2007
- Cree, Inc.
- Adrian Powell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-insulating silicon carbide without vanadium domination
- Patent number 6,639,247
- Issue date Oct 28, 2003
- Cree, Inc.
- Calvin H. Carter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semi-insulating silicon carbide without vanadium domination
- Patent number 6,403,982
- Issue date Jun 11, 2002
- Cree, Inc.
- Calvin H. Carter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semi-insulating silicon carbide without vanadium domination
- Patent number 6,396,080
- Issue date May 28, 2002
- Cree, Inc.
- Calvin H. Carter
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semi-insulating silicon carbide without vanadium domination
- Patent number 6,218,680
- Issue date Apr 17, 2001
- Cree, Inc.
- Calvin H. Carter
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
LOW MICROPIPE 100 MM SILICON CARBIDE WAFER
- Publication number 20140291698
- Publication date Oct 2, 2014
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW 1C SCREW DISLOCATION 3 INCH SILICON CARBIDE WAFER
- Publication number 20130161651
- Publication date Jun 27, 2013
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER
- Publication number 20110024766
- Publication date Feb 3, 2011
- Cree, Inc.
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Low Micropipe 100 mm Silicon Carbide Wafer
- Publication number 20080237609
- Publication date Oct 2, 2008
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
Low 1C Screw Dislocation 3 Inch Silicon Carbide Wafer
- Publication number 20080169476
- Publication date Jul 17, 2008
- Cree, Inc.
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
One Hundred Millimeter SiC Crystal Grown on Off-Axis Seed
- Publication number 20080008641
- Publication date Jan 10, 2008
- Robert T. Leonard
- C30 - CRYSTAL GROWTH
Information Patent Application
LOW MICROPIPE 100 MM SILICON CARBIDE WAFER
- Publication number 20070209577
- Publication date Sep 13, 2007
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
Seeded single crystal silicon carbide growth and resulting crystals
- Publication number 20060213430
- Publication date Sep 28, 2006
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Process for producing high quality large size silicon carbide crystals
- Publication number 20060118037
- Publication date Jun 8, 2006
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
Low basal plane dislocation bulk grown SiC wafers
- Publication number 20060075958
- Publication date Apr 13, 2006
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
Low 1c screw dislocation 3 inch silicon carbide wafer
- Publication number 20060073707
- Publication date Apr 6, 2006
- Adrian Powell
- C30 - CRYSTAL GROWTH
Information Patent Application
One hundred millimeter high purity semi-insulating single crystal s...
- Publication number 20050126471
- Publication date Jun 16, 2005
- Jason Ronald Jenny
- C30 - CRYSTAL GROWTH
Information Patent Application
Semi-insulating silicon carbide without vanadium domination
- Publication number 20010023945
- Publication date Sep 27, 2001
- Calvin H. Carter
- C30 - CRYSTAL GROWTH
Information Patent Application
Semi-insulating silicon carbide without vanadium domination
- Publication number 20010019132
- Publication date Sep 6, 2001
- Calvin H. Carter
- C30 - CRYSTAL GROWTH
Information Patent Application
Semi-insulating silicon carbide without vanadium domination
- Publication number 20010017374
- Publication date Aug 30, 2001
- Calvin H. Carter
- C30 - CRYSTAL GROWTH

Person

Patents Grantslast 30 patents

One hundred millimeter SiC crystal grown on off-axis seed

Low micropipe 100 mm silicon carbide wafer

Low 1C screw dislocation 3 inch silicon carbide wafer

Low 1C screw dislocation 3 inch silicon carbide wafer

Low micropipe 100 mm silicon carbide wafer

Low 1C screw dislocation 3 inch silicon carbide wafer

One hundred millimeter single crystal silicon carbide wafer

One hundred millimeter high purity semi-insulating single crystal s...

Process for producing high quality large size silicon carbide crystals

Seeded single crystal silicon carbide growth and resulting crystals

Low micropipe 100 mm silicon carbide wafer

Low 1c screw dislocation 3 inch silicon carbide wafer

Low basal plane dislocation bulk grown SiC wafers

Semi-insulating silicon carbide without vanadium domination

Semi-insulating silicon carbide without vanadium domination

Semi-insulating silicon carbide without vanadium domination

Semi-insulating silicon carbide without vanadium domination

Patents Applicationslast 30 patents

LOW MICROPIPE 100 MM SILICON CARBIDE WAFER

LOW 1C SCREW DISLOCATION 3 INCH SILICON CARBIDE WAFER

ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER

Low Micropipe 100 mm Silicon Carbide Wafer

Low 1C Screw Dislocation 3 Inch Silicon Carbide Wafer

One Hundred Millimeter SiC Crystal Grown on Off-Axis Seed

LOW MICROPIPE 100 MM SILICON CARBIDE WAFER

Seeded single crystal silicon carbide growth and resulting crystals

Process for producing high quality large size silicon carbide crystals

Low basal plane dislocation bulk grown SiC wafers

Low 1c screw dislocation 3 inch silicon carbide wafer

One hundred millimeter high purity semi-insulating single crystal s...

Semi-insulating silicon carbide without vanadium domination

Semi-insulating silicon carbide without vanadium domination

Semi-insulating silicon carbide without vanadium domination