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Mark C. Foisy
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Austin, TX, US
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Patents Grants
last 30 patents
Information
Patent Grant
Transistor with differently doped strained current electrode region
Patent number
7,687,337
Issue date
Mar 30, 2010
FREESCALE SEMICONDUCTOR, INC.
Da Zhang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor process for forming stress absorbent shallow trench i...
Patent number
7,442,621
Issue date
Oct 28, 2008
FREESCALE SEMICONDUCTOR, INC.
Marius K. Orlowski
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming device having a raised extension region
Patent number
7,344,933
Issue date
Mar 18, 2008
FREESCALE SEMICONDUCTOR, INC.
Sinan Goktepeli
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
TRANSISTOR WITH DIFFERENTLY DOPED STRAINED CURRENT ELECTRODE REGION
Publication number
20090020783
Publication date
Jan 22, 2009
Da Zhang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Method of forming device having a raised extension region
Publication number
20070155073
Publication date
Jul 5, 2007
FREESCALE SEMICONDUCTOR, INC.
Sinan Goktepeli
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR DEVICE WITH MULTIPLE SEMICONDUCTOR LAYERS
Publication number
20060194384
Publication date
Aug 31, 2006
FREESCALE SEMICONDUCTOR, INC.
Suresh Venkatesan
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Semiconductor process for forming stress absorbent shallow trench i...
Publication number
20060110892
Publication date
May 25, 2006
Freescale Semiconductor, Inc.
Marius K. Orlowski
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Semiconductor device with multiple semiconductor layers
Publication number
20050275018
Publication date
Dec 15, 2005
Suresh Venkatesan
H01 - BASIC ELECTRIC ELEMENTS